公开(公告)号：US20220199525A1

公开(公告)日：2022-06-23

申请号：US17126921

申请日：2020-12-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. STAMPER ,  John J. ELLIS-MONAGHAN ,  Steven M. SHANK ,  John J. PEKARIK ,  Vibhor JAIN

IPC: H01L23/525 ,  H01L27/12 ,  H01L23/532

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a metal-free fuse structure and methods of manufacture. The structure includes: a first metal-free fuse structure comprising a top semiconductor material of semiconductor-on-insulator (SOI) technologies, the top semiconductor material including end portions with a first electrical resistance and a fuse portion of a second, higher electrical resistance electrically connected to the end portions; and a second metal-free fuse structure comprising the top semiconductor material of semiconductor-on-insulator (SOI) technologies, the top semiconductor material of the second metal-free fuse structure including at least a fuse portion of a lower electrical resistance than the second, higher electrical resistance.

公开(公告)号：US20210335731A1

公开(公告)日：2021-10-28

申请号：US16855185

申请日：2020-04-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Vibhor JAIN ,  Ajay RAMAN ,  Sebastian T. VENTRONE ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI ,  Yves T. NGU

IPC: H01L23/00

Abstract: The present disclosure relates to an active x-ray attack prevention structure for secure integrated circuits. In particular, the present disclosure relates to a structure including a functional circuit, and at least one latchup sensitive diode circuit configured to induce a latchup condition in the functional circuit, placed in proximity of the functional circuit.

公开(公告)号：US20210313373A1

公开(公告)日：2021-10-07

申请号：US16842080

申请日：2020-04-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  Vibhor JAIN ,  Alvin J. JOSEPH ,  Steven M. SHANK

IPC: H01L27/146

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors with buried airgap mirror reflectors. The structure includes a photodetector and at least one airgap in a substrate under the photodetector.

公开(公告)号：US20210202717A1

公开(公告)日：2021-07-01

申请号：US16730371

申请日：2019-12-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor JAIN ,  Steven M. SHANK ,  John J. PEKARIK ,  Anthony K. STAMPER

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L29/10 ,  H01L29/15 ,  H01L29/16 ,  H01L29/267

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to transistors with an oxygen lattice structure and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the substrate; at least one oxygen film separating the sub-collector region and the collector region; an emitter region adjacent to the collector region; and a base region adjacent to the emitter region.

公开(公告)号：US20210111247A1

公开(公告)日：2021-04-15

申请号：US16804435

申请日：2020-02-28

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： John J. PEKARIK ,  Vibhor JAIN

IPC: H01L29/10 ,  H01L29/737 ,  H01L29/08 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region above the sub-collector region; an intrinsic base region composed of intrinsic base material located above the collector region; an emitter located above and separated from the intrinsic base material; and a raised extrinsic base having a stepped configuration and separated from and self-aligned to the emitter.

公开(公告)号：US20210091195A1

公开(公告)日：2021-03-25

申请号：US16732755

申请日：2020-01-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Judson R. HOLT ,  Vibhor JAIN ,  Qizhi LIU ,  Ramsey HAZBUN ,  Pernell DONGMO ,  John J. PEKARIK ,  Cameron E. LUCE

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the sub-collector region, the collector region composed of semiconductor material; an intrinsic base region composed of intrinsic base material surrounded by the semiconductor material above the collector region; and an emitter region above the intrinsic base region.

公开(公告)号：US20240250157A1

公开(公告)日：2024-07-25

申请号：US18099366

申请日：2023-01-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yves T. NGU ,  Johnatan A. KANTAROVSKY ,  Sebastian T. VENTRONE

IPC: H01L29/73 ,  H01L23/34 ,  H01L27/07 ,  H01L29/06 ,  H01L29/08 ,  H01L29/737

CPC classification number: H01L29/7302 ,  H01L23/345 ,  H01L27/075 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heater terminal contacts, methods of operation and methods of manufacture. The structure includes: a heterojunction bipolar transistor having a collector, sub-collector region, emitter and base region; and heater terminal contacts electrically coupled to the sub-collector region.

公开(公告)号：US20240249992A1

公开(公告)日：2024-07-25

申请号：US18099389

申请日：2023-01-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yves T. NGU ,  Johnatan A. KANTAROVSKY ,  Sebastian T. VENTRONE

IPC: H01L23/34 ,  H01L29/737

CPC classification number: H01L23/345 ,  H01L29/7371

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heater elements, methods of operation and methods of manufacture. The structure includes: an active device; a heater element under the active device and within a semiconductor substrate; and a contact to the heater element and the active device.

公开(公告)号：US20240186441A1

公开(公告)日：2024-06-06

申请号：US18075908

申请日：2022-12-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. DERRICKSON ,  Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yusheng BIAN ,  Judson R. HOLT

IPC: H01L31/11 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/1105 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1808

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.

公开(公告)号：US20230402453A1

公开(公告)日：2023-12-14

申请号：US18231510

申请日：2023-08-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor JAIN ,  John J. ELLIS-MONAGHAN ,  Anthony K. STAMPER ,  Steven M. SHANK ,  John J. PEKARIK

IPC: H01L27/082 ,  H01L27/06 ,  H01L29/737 ,  H01L29/06

CPC classification number: H01L27/082 ,  H01L27/0647 ,  H01L29/737 ,  H01L29/0646

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich isolation region and methods of manufacture. The structure includes: a first heterojunction bipolar transistor; a second heterojunction bipolar transistor; and a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor.