摘要:
A method for producing a crystalline solar cell having a p-doped silicon substrate with an n-doped region on the front side and also at least one antireflection layer is provided. The method includes uniformly applying a solution containing phosphoric acid to the entire front-side surface of the solar cell, forming phosphosilicate glass in a first thermal treatment step applied to the solar cell, and, in the first thermal treatment step or a subsequent thermal treatment step, forming silicon-containing precipitates near the surface with a homogeneous or substantially homogeneous surface coverage in a layer on the front-side surface of the substrate in the range of between 5% and 100%.
摘要:
Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature T1 and keeping the semiconductor element at temperature T1 over a time t1; sintering the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2; cooling the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature T3 over a time T3; cooling the semiconductor component to a temperature T4 with T4≦−35° C. and keeping the semiconductor component at temperature T4 over a time T4; and heating the semiconductor component to room temperature.
摘要:
The invention relates to a solar cell module comprising electrically interconnected solar cells with front and backs, a transparent first layer running along the front sides, which is covered on the front laterally by a transparent cover, as well as a second layer running along the backsides, which is covered at the back by a second cover. In order to prevent and/or minimize a potential-induced reduction to a large extent and/or obtain an improved stability vis-à-vis thermo-cycling, it is suggested that first layer consists of a first polymer material and the second layer consists of a second polymer material deviating from the first polymer material and the fact that specific resistance is larger p1 of the first material is greater than specific resistance p2 of the second material.
摘要:
The invention relates to a method and to an arrangement for localizing production errors in a semiconductor component part by generating excess charge carriers in the semiconductor component part and by determining the electric potential in said part. In order to be able to localize production errors with simple measures and without damaging the semiconductor component part, it is suggested that the semiconductor component part be stimulated to become luminescent and that the locally resolved luminescence intensity distribution be determined in order to determine the locally resolved distribution of the electric potential in the semiconductor component part.