公开(公告)号：US06673714B2

公开(公告)日：2004-01-06

申请号：US10133605

申请日：2002-04-25

申请人： Heon Lee ,  Thomas C. Anthony ,  Lung T. Tran

发明人： Heon Lee ,  Thomas C. Anthony ,  Lung T. Tran

IPC分类号： H01L214763

CPC分类号： H01L21/0338 ,  H01L21/0273 ,  H01L21/0337 ,  Y10S438/947

摘要： A method of fabricating a sub-lithographic sized via is disclosed. A dual-polymer method is used to form a stacked layer of polymer materials wherein a first polymer layer has a first etch rate and a second polymer layer has a second etch rate. The first etch rate is preselected to be faster than the second etch rate when the first and second polymer layers are isotropically etched. The second polymer layer is made from a photo active material and is operative as an etch mask for the first photoresist layer. The etching is continued until the first polymer layer has a sub-lithographic feature size that is less than a lithography limit of a lithography system. A dielectric material is deposited on the etch mask and the first polymer layer. The first polymer layer is lifted-off to define a sub-lithographic sized via.

摘要翻译： 公开了一种制造亚光刻尺寸的通孔的方法。 使用双聚合物方法形成聚合物材料的堆叠层，其中第一聚合物层具有第一蚀刻速率，第二聚合物层具有第二蚀刻速率。 当第一和第二聚合物层被各向同性蚀刻时，预先选择第一蚀刻速率快于第二蚀刻速率。 第二聚合物层由光活性材料制成，并且可用作第一光致抗蚀剂层的蚀刻掩模。 继续蚀刻直到第一聚合物层具有小于光刻系统的光刻极限的亚光刻特征尺寸。 介电材料沉积在蚀刻掩模和第一聚合物层上。 第一聚合物层被剥离以确定亚光刻尺寸的通孔。

公开(公告)号：US06541792B1

公开(公告)日：2003-04-01

申请号：US09951378

申请日：2001-09-14

申请人： Lung T. Tran ,  Heon Lee

发明人： Lung T. Tran ,  Heon Lee

IPC分类号： H01L2904

CPC分类号： H01L27/101 ,  G11C17/16

摘要： A memory device includes memory cells having two tunnel junctions in series. In order to program a selected memory cell, a first tunnel junction in the selected memory cell is blown. Blowing the first tunnel junction creates a short across the first tunnel junction, and changes the resistance of the selected memory cell from a first state to a second state. The change in resistance is detectable by a read process. The second tunnel junction has different anti-fuse characteristic than the first tunnel junction, and is not shorted by the write process. The second tunnel junction can therefore provide an isolation function to the memory cell after the first tunnel junction is blown.

摘要翻译： 存储器件包括具有串联的两个隧道结的存储单元。 为了对所选择的存储器单元进行编程，所选择的存储器单元中的第一隧道结被熔断。 吹制第一隧道结在第一隧道结上产生短路，并且将所选择的存储器单元的电阻从第一状态改变到第二状态。 电阻的变化可以通过读取过程来检测。 第二个隧道结具有与第一个隧道结不同的抗熔断特性，并且不会因写入过程而短路。 因此，第二隧道结可以在第一隧道结被吹制之后向存储器单元提供隔离功能。

公开(公告)号：US06937506B2

公开(公告)日：2005-08-30

申请号：US10753539

申请日：2004-01-08

申请人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee

发明人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/15

摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.

摘要翻译： 一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。 电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。 热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量 。

公开(公告)号：US06989327B2

公开(公告)日：2006-01-24

申请号：US10770083

申请日：2004-01-31

申请人： Manish Sharma ,  Thomas C. Anthony ,  Heon Lee

发明人： Manish Sharma ,  Thomas C. Anthony ,  Heon Lee

IPC分类号： H01L21/44

CPC分类号： H01L21/0331 ,  H01L21/0272 ,  H01L21/31144 ,  H01L43/12 ,  Y10S438/951

摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.

摘要翻译： 本发明的一个方面是在薄膜器件中形成接触的方法。 该方法包括形成剥离模板，将至少一种材料沉积通过剥离模板，去除剥离模板的一部分，与剥离模板的剩余部分形成重新进入的模型并且沉积导体材料与所述脱模模板接触。 至少一个材料在入口轮廓。

公开(公告)号：US06839271B1

公开(公告)日：2005-01-04

申请号：US10685618

申请日：2003-10-15

申请人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee

发明人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee

IPC分类号： H01L27/105 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L43/08

CPC分类号： G11C11/16

摘要： A magnetic memory device which comprises a magnetic memory cell that includes a magnetic material switchable between two resistive states on the application of a magnetic field. The device also comprises a wire that is connected to the magnetic memory cell and has a conductive connecting link and a conductive word or bit line which are electrically connected to each other. The connecting link is disposed between the word or bit line and the magnetic memory cell and has a thermal resistance that is larger than that of the word or bit line so as to provide a barrier for heat conduction from the magnetic memory cell to the word or bit line.

公开(公告)号：US07102921B2

公开(公告)日：2006-09-05

申请号：US10843787

申请日：2004-05-11

申请人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee ,  Robert G Walmsley

发明人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee ,  Robert G Walmsley

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.

摘要翻译： 本发明提供了一种磁存储器件，其包括通过施加磁场在两个状态之间切换的磁存储器单元，其中用于这种切换的磁场部分地取决于存储单元温度。 该装置还包括靠近磁存储器单元的至少一个加热器元件，并且与磁存储单元连接的用于加热磁存储单元的串联。 该装置还包括用于选择性地施加电流通过至少一个加热器元件以便加热电池并促进电池状态切换的电路。

公开(公告)号：US07522446B2

公开(公告)日：2009-04-21

申请号：US10698501

申请日：2003-10-31

申请人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

发明人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： H01L27/222 ,  G11C11/16 ,  G11C11/1675

摘要： A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.

摘要翻译： 一种用于制造磁性随机存取存储器（MRAM）的方法，其减少MRAM阵列中的存储器单元的热传导。 该方法使用位和字线的网格来选择性地访问磁存储单元阵列中的数据。 栅极具有多个电阻和电阻部分，其提供到磁存储器单元的连接。 电阻部分增加了由每个存储单元产生的热的热阻，并且在操作期间提供有源存储器单元的局部加热以便于单元状态切换。

公开(公告)号：US06984530B2

公开(公告)日：2006-01-10

申请号：US10811553

申请日：2004-03-29

申请人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

发明人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

IPC分类号： H01L21/00

CPC分类号： H01L27/222 ,  H01L43/12

摘要： A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.

摘要翻译： 公开了制造磁随机存取存储器（MRAM）装置的方法。 该方法减少了制造MRAM设备所需的掩模步骤和处理步骤的数量。 第一导电层和感测层在第一掩模步骤中被图案化。 随后的蚀刻步骤形成在第一方向上彼此连续的底部电极和感测层。 在第二掩模步骤中图案化形成磁性隧道结叠层所需的第二导电层和多层材料。 随后的蚀刻步骤形成在第二方向上彼此连续的顶部电极和多个材料层，以及多个离散感测层。 离散感测层和多层材料限定了多个磁性隧道结装置。

公开(公告)号：US07616551B2

公开(公告)日：2009-11-10

申请号：US10721574

申请日：2003-11-25

申请人： Sean Ziao-an Zhang ,  Heon Lee

发明人： Sean Ziao-an Zhang ,  Heon Lee

IPC分类号： G11B7/00

CPC分类号： G11B11/00 ,  G11B7/0033 ,  G11B7/00455 ,  G11B7/24

摘要： Method for employing optical state-change organic polymer films as information-storage layers in optoelectronic, high-density memories, and high-density optoelectronic memories produced by the method. In certain embodiments, the optical state-change organic polymer films can be manufactured to exhibit two different, stable optical states, one transparent, and one light-absorbing and/or light-reflecting, that can be locally, stably, and reversibly induced by application of an electrical field. In various embodiments, information is digitally encoded in an information-storage layer as bits, the value of each bit represented by the optical state of an area of the information-storage layer corresponding to the bit. In various embodiments, the optical state of a small region of the information-storage layer can be determined by exposing the small region to visible light, and determining whether or not a photodiode layer in an information-storage medium below the information-storage layer generates an electrical current in response to illumination.

摘要翻译： 在光电子，高密度存储器中使用光学状态变换有机聚合物膜作为信息存储层的方法，以及通过该方法制造的高密度光电存储器。 在某些实施方案中，可以制造光学状态变化的有机聚合物膜以呈现两种不同的，稳定的光学状态，一种透明的，一种光吸收和/或光反射，其可以局部，稳定和可逆地由 应用电场。 在各种实施例中，信息在信息存储层中被数字地编码为比特，每个比特的值由对应于该比特的信息存储层的区域的光学状态表示。 在各种实施例中，信息存储层的小区域的光学状态可以通过将小区域暴露于可见光来确定，并且确定在信息存储层下方的信息存储介质中的光电二极管层是否产生 响应照明的电流。

公开(公告)号：US07462292B2

公开(公告)日：2008-12-09

申请号：US10766646

申请日：2004-01-27

申请人： Heon Lee

发明人： Heon Lee

IPC分类号： C03C25/68 ,  B44C1/22

CPC分类号： C04B35/565 ,  B81C99/009 ,  B82Y10/00 ,  B82Y40/00 ,  C04B2235/602 ,  C04B2235/94 ,  G03F7/0002

摘要： A method of fabricating a silicon carbide imprint stamp is disclosed. A mold layer has a cavity formed therein. A spacer is formed in the cavity to reduce a first feature size of the cavity. A casting process is used to form a feature and a foundation layer connected with the feature. The spacer operatively reduces the first feature size of the feature to a second feature size that is less than the lithography limit. The foundation layer and the feature are unitary whole made from a material comprising silicon carbide (SiC), a material that is harder than silicon (Si) alone. Consequently, the silicon carbide imprint stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the silicon carbide imprint stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

摘要翻译： 公开了一种制造碳化硅印记印模的方法。 模具层中形成有空腔。 间隔件形成在空腔中以减小空腔的第一特征尺寸。 使用铸造工艺来形成与特征相连的特征和基础层。 间隔件可以将特征的第一特征尺寸减小到小于光刻极限的第二特征尺寸。 基础层和特征是由包括碳化硅（SiC）的材料制成的整体，其是单独比硅（Si）更硬的材料。 因此，碳化硅印记印模具有更长的使用寿命，因为它可以承受几个压印周期而不会磨损或断裂。 更长的使用寿命使得碳化硅印记印模经济上可行，因为制造成本可以在使用寿命内回收。