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    Method of fabricating a sub-lithographic sized via
    1.
    发明授权
    Method of fabricating a sub-lithographic sized via 有权
    制造亚光刻尺寸通孔的方法

    公开(公告)号：US06673714B2

    公开(公告)日：2004-01-06

    申请号：US10133605

    申请日：2002-04-25

    申请人： Heon Lee ,  Thomas C. Anthony ,  Lung T. Tran

    发明人： Heon Lee ,  Thomas C. Anthony ,  Lung T. Tran

    IPC分类号： H01L214763

    CPC分类号： H01L21/0338 ,  H01L21/0273 ,  H01L21/0337 ,  Y10S438/947

    摘要： A method of fabricating a sub-lithographic sized via is disclosed. A dual-polymer method is used to form a stacked layer of polymer materials wherein a first polymer layer has a first etch rate and a second polymer layer has a second etch rate. The first etch rate is preselected to be faster than the second etch rate when the first and second polymer layers are isotropically etched. The second polymer layer is made from a photo active material and is operative as an etch mask for the first photoresist layer. The etching is continued until the first polymer layer has a sub-lithographic feature size that is less than a lithography limit of a lithography system. A dielectric material is deposited on the etch mask and the first polymer layer. The first polymer layer is lifted-off to define a sub-lithographic sized via.

    摘要翻译： 公开了一种制造亚光刻尺寸的通孔的方法。 使用双聚合物方法形成聚合物材料的堆叠层，其中第一聚合物层具有第一蚀刻速率，第二聚合物层具有第二蚀刻速率。 当第一和第二聚合物层被各向同性蚀刻时，预先选择第一蚀刻速率快于第二蚀刻速率。 第二聚合物层由光活性材料制成，并且可用作第一光致抗蚀剂层的蚀刻掩模。 继续蚀刻直到第一聚合物层具有小于光刻系统的光刻极限的亚光刻特征尺寸。 介电材料沉积在蚀刻掩模和第一聚合物层上。 第一聚合物层被剥离以确定亚光刻尺寸的通孔。

    3-D memory device for large storage capacity
    4.
    发明授权
    3-D memory device for large storage capacity 有权
    3-D存储设备，存储容量大

    公开(公告)号：US06504742B1

    公开(公告)日：2003-01-07

    申请号：US09984934

    申请日：2001-10-31

    申请人： Lung T. Tran ,  Thomas C. Anthony

    发明人： Lung T. Tran ,  Thomas C. Anthony

    IPC分类号： G11C502

    CPC分类号： H01L27/10897 ,  G11C5/02 ,  G11C5/025 ,  G11C8/12 ,  G11C13/0023 ,  G11C2213/71 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/10805 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A random access memory (memory) includes one or more planes of memory arrays stacked on top of each other. Each plane may be manufactured separately, and each array within the plane may be enabled/disabled separately. In this manner, each memory array within the plane can be individually tested, and defective memory arrays may be sorted out, which increases the final yield and quality. A memory plane may be stacked on top of each other and on top of an active circuit plane to make a large capacity memory device. The memory may be volatile or non-volatile by using appropriate memory cells as base units. Also, the memory plane may be fabricated separately from the active circuitry. Thus the memory plane does not require a silicon substrate, and may be formed from a glass substrate for example. Further, each memory plane may be individually selected (or enabled) via plane memory select transistors. The array may be individually selected (or enable) via array select transistor. These transistors may be formed from amorphous silicon transistor(s) and/or thin-film transistor(s). The data bus, array select bus, and the plane select bus provide electrical connections between the memory planes and the active circuit plane via side contact pads on each plane. 3-D memory for large storage capacity. The memory may be formed from one or more planes with each plane including one or more memory arrays. Each memory array of each plane may be separately enabled or disabled. The memory array may be formed on silicon or non-silicon based substrate. An active circuit plane may be shared among the memory arrays and planes to perform read and write functions.

    摘要翻译： 随机存取存储器（存储器）包括堆叠在彼此之上的一个或多个存储器阵列平面。 每个平面可以单独制造，并且平面内的每个阵列可以单独启用/禁用。 以这种方式，可以单独地测试平面内的每个存储器阵列，并且可以整理出有缺陷的存储器阵列，这增加了最终的产量和质量。 存储器平面可以堆叠在彼此的顶部并且在有源电路平面的顶部上以形成大容量存储器件。 通过使用适当的存储器单元作为基本单元，存储器可以是易失性的或非易失性的。 此外，存储器平面可以与有源电路分开制造。 因此，存储器平面不需要硅衬底，并且可以由例如玻璃衬底形成。 此外，每个存储器平面可以经由平面存储器选择晶体管单独选择（或使能）。 阵列可以通过阵列选择晶体管单独选择（或使能）。 这些晶体管可以由非晶硅晶体管和/或薄膜晶体管形成。 数据总线，阵列选择总线和平面选择总线通过每个平面上的侧接触垫在存储器平面和有源电路平面之间提供电连接。 3-D内存大容量存储。 存储器可以由一个或多个平面形成，每个平面包括一个或多个存储器阵列。 每个平面的每个存储器阵列可以单独启用或禁用。 存储器阵列可以形成在硅或非硅基衬底上。 可以在存储器阵列和平面之间共享有源电路平面以执行读取和写入功能。

    One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells
    6.
    发明授权
    One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells 失效
    一次性可编程存储器，使用保险丝/反熔丝和垂直取向的熔丝单元存储单元

    公开(公告)号：US06584029B2

    公开(公告)日：2003-06-24

    申请号：US09924577

    申请日：2001-08-09

    申请人： Lung T. Tran ,  Thomas C. Anthony ,  Frederick A. Perner

    发明人： Lung T. Tran ,  Thomas C. Anthony ,  Frederick A. Perner

    IPC分类号： G11C700

    CPC分类号： H01L23/5252 ,  G11C13/0004 ,  G11C17/16 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A one-time programmable (“OTP”) memory includes one or more memory arrays stacked on top of each other. The OTP memory array is a cross-point array where unit memory cells are formed at the cross-points. The unit memory cell may include a fuse and an anti-fuse in series with each other or may include a vertically oriented fuse. Programming the memory may include the steps of selecting unit memory cells, applying a writing voltage such that critical voltage drop across the selected cells occur. This causes the anti-fuse of the cell to break down to a low resistance. The low resistance of the anti-fuse causes a high current pulse to be delivered to the fuse, which in turn melts the fuse to an open state. Reading the memory may include the steps of selecting unit memory cells for reading, applying a reading voltage to the selected memory cells and measuring whether current is present or not. Equipotential sensing may be used to read the memory.

    摘要翻译： 一次性可编程（“OTP”）存储器包括堆叠在彼此之上的一个或多个存储器阵列。 OTP存储器阵列是在交叉点处形成单位存储单元的交叉点阵列。 单元存储单元可以包括彼此串联的保险丝和反熔丝，或者可以包括垂直定向的保险丝。 对存储器进行编程可以包括选择单元存储器单元，施加写入电压以使得跨所选单元格出现临界电压降的步骤。 这使得电池的反熔丝分解成低电阻。 反熔丝的低电阻导致高电流脉冲被输送到保险丝，熔丝将熔丝熔化成打开状态。 读取存储器可以包括以下步骤：选择用于读取的单元存储单元，向所选存储单元施加读取电压并测量是否存在电流。 等电位感测可用于读取存储器。

    One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same
    7.
    发明授权
    One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same 有权
    一次性可编程单元存储单元基于垂直定向的保险丝和二极管以及一次性可编程存储器

    公开(公告)号：US06567301B2

    公开(公告)日：2003-05-20

    申请号：US09924500

    申请日：2001-08-09

    申请人： Thomas C. Anthony ,  Lung T. Tran

    发明人： Thomas C. Anthony ,  Lung T. Tran

    IPC分类号： G11C1136

    CPC分类号： G11C17/16

    摘要： A one-time programmable unit memory cell includes a vertically oriented fuse and an diode in series. Within the vertically oriented fuse, the current flow is substantially vertical, i.e. perpendicular to the plane of the substrate. Also, the vertically oriented fuse is placed between top and bottom conductors. This vertical placement of the elements helps to increase density of memory devices built using these unit cells. Also, vertically oriented fuses consume very little lateral area, which helps the density even further. The unit memory cell has two states, an initial state and a written (programmed) state. In the initial state, a resistance of the cell is finite because the vertically oriented fuse is left intact. In the written state, the resistance is infinite because the fuse is blown open. The cell may be programmed by applying a critical voltage across the cell enough to cause the fuse to become open. The states are detected by applying a read voltage across the memory cell. If the is not programmed, then a measurable amount flows. Otherwise, no current flows due to the open circuit. A cross-point memory array may be formed with unit memory cells formed at each cross point. With addition of read and write circuitry, the memory array maybe used as memory. However, multiple arrays may be stacked to form high density memory devices.

    摘要翻译： 一次性可编程单元存储单元包括垂直取向的熔丝和串联的二极管。 在垂直取向的熔丝内，电流大致垂直于垂直于衬底的平面。 此外，垂直定向的熔断器放置在顶部和底部导体之间。 元件的这种垂直放置有助于增加使用这些单元电池构建的存储器件的密度。 此外，垂直取向的保险丝消耗的横向面积很小，这进一步有助于密度。 单位存储单元具有两种状态，初始状态和写入（编程）状态。 在初始状态下，电池的电阻是有限的，因为垂直取向的保险丝保持原样。 在写入状态下，电阻是无限大的，因为保险丝熔断了。 可以通过在电池上施加足够的临界电压以使熔丝变得开放来对单元进行编程。 通过在存储器单元上施加读取电压来检测状态。 如果没有编程，那么可测量的流量。 否则，由于开路，电流不流动。 交叉点存储器阵列可以形成在每个交叉点处形成的单位存储单元。 通过添加读写电路，存储器阵列可以用作存储器。 然而，可以堆叠多个阵列以形成高密度存储器件。

    Memory device with a thermally assisted write
    8.
    发明授权
    Memory device with a thermally assisted write 有权
    具有热辅助写入的存储器件

    公开(公告)号：US06961263B2

    公开(公告)日：2005-11-01

    申请号：US10657519

    申请日：2003-09-08

    申请人： Kenneth K. Smith ,  Thomas C. Anthony ,  Lung T. Tran

    发明人： Kenneth K. Smith ,  Thomas C. Anthony ,  Lung T. Tran

    IPC分类号： G11C11/15 ,  G11C11/14 ,  G11C5/06

    CPC分类号： G11C11/15 ,  G11C11/1675

    摘要： A memory device includes an array of magnetic storage cells. Each magnetic storage cell in the array includes a set of conductors used to write data to a storage cell and a second set of conductors used to heat the magnetic storage cell and read data from the magnetic storage cell. The magnetic storage cells can be used in electronic systems such as a computer system or consumer electronic system.

    摘要翻译： 存储器件包括磁存储单元阵列。 阵列中的每个磁存储单元包括用于向存储单元写入数据的一组导体和用于加热磁存储单元并从磁存储单元读取数据的第二组导体。 磁存储单元可用于诸如计算机系统或消费电子系统的电子系统中。