摘要:
In making a vertical bipolar transistors, after forming by diffusion process a region to become inactive base region an oxide film is selectively formed on the region, thereafter an ion implantation is carried out to produce regions which become the active base region and emitter region by using the oxide film; thereby such a configuration is formed so that defect part (108) induced at the time of the ion implantation is confined in the emitter region, thereby minimizing the leakage current at the PN junction, and hence assuring production of high performance and high reliability semiconductor devices; further, a high integration is attained by adopting self-alignment in forming emitter contact.
摘要:
A parallel type analog-digital converter having a plural number (1023) of comparators, a first voltage divider comprising a plural number (1023) of resistors (R.sub.1 to R.sub.1023) connected in series across positive and negative terminals of a power source thereby feeding reference voltages from the junction points to the comparators, the apparatus further comprisesa second voltage divider comprising a second plural number (8) of resistors (r.sub.1, r.sub.2 . . . r.sub.8) connected in series across the voltage feeding terminals thereby feeding input voltages to input terminals of the current amplifiers D.sub.1, D.sub.2 . . . D.sub.8, the output of which is given to the corresponding junction points of the first voltage divider, thereby to equalize voltages of said first voltage divider with voltages of corresponding junction points of said second voltage divider.
摘要:
An image forming apparatus includes a light emission element, a lighting signal generation section, a storage section, a communication line, a control section and an electromagnetic noise generation source. The storage section stores data used when the lighting signal generation section generates a lighting signal. The lighting signal generation section and the storage section transmit and receive the data therebetween through the communication line. The control section that controls the transmitting and receiving of the data between the lighting signal generation section and the storage section. The control section controls so as to start the transmitting and receiving of the data between the storage section and the lighting signal generation section in a state where a magnitude of the electromagnetic noise, at a position where the lighting signal generation section is disposed, generated by the electromagnetic noise generation source is smaller than a predetermined value.
摘要:
In a semiconductor memory device comprising memory cells in which first and second potentials correspond to the logic values "0" and "1", the first potential is closer to the second potential than the potential of unselected word lines, by 0.3 V or more. The pull-up transistor is of the N-type, and the pull-down transistor is of the P-type.
摘要:
An exposure device includes an exposure section and first and second signal output units. The exposure section has plural light emitting elements. The first signal output unit outputs to the exposure section a first signal for determining timings for starting and ending light emission of the respective light emitting elements. The second signal output unit outputs to the exposure section a second signal for determining as to whether the respective light emitting elements are caused to emit light for respective pixels. If light mission of the respective light emitting elements is stopped with respect to all pixels of one line in a main scanning direction, the first signal does not output to the exposure section for each group of one or plural light emitting elements that operate based on the common first signal.
摘要:
In a semiconductor memory device comprising memory cells in which first and second potentials correspond to the logic values "0" and "1", the first potential is closer to the second potential than the potential of unselected word lines, by 0.3 V or more. The pull-up transistor is of the N-type, and the pull-down transistor is of the P-type.
摘要:
Disclosed is a semiconductor memory device comprising a semiconductor substrate on which memory cells are formed, each including a switching transistor formed on the semiconductor substrate and a capacitor disposed above the switching transistor. The capacitor has a storage electrode, a cell plate and a capacitor insulating film sandwiched therebetween. The storage electrodes of at least two adjacent memory cells are partly disposed one above the other, with part of the cell plate interposed therebetween. Also disclosed is a semiconductor memory device in which the capacitors of the memory cells are disposed in a trench formed in the semiconductor substrate. The two switching transistors of two adjacent memory cells are located on each island-shaped active region surrounded by the trench. The storage electrodes of the capacitors of the two adjacent memory cells extend side by side around the corresponding active region, with part of the cell plate interposed between the storage electrodes.
摘要:
An IC device comprising a junction type field effect transistor of a back gate type and a bipolar device such as a bipolar transistor and a resistor made of impurity diffused region, wherein an extremely thin (in the order of 0.05-0.2 .mu.m) impurity doped surface region of a conductivity type same as that of a back gate region is formed at the surface of a surface channel region, and is separated from at least a drain region to sustain high breakdown voltage between gate region and the drain region; the impurity surface region serving to reduce noise and also enabling to achieve satisfactory characteristics of J-FET and also good ohmic characteristics of the resistor.
摘要:
A tone generator system for an electronic organ which is capable of being fabricated into an LSI structure and receives a saw-tooth wave or staircase wave as an input thereto comprises a frequency divider for the saw-tooth wave or staircase wave including a ladder resistor network and a complementary MOS FET devices, an analog switch having a wide dynamic range and a high linearity in input-output transfer characteristic constructed by MOS FET devices to serve as an indirect keying means, a sustain means including a novel structure of a variable impedance element which is constructed to control a channel current in a MOS FET device by varying the potential distribution in the source region, and an impedance coverter constructed by complementary MOS FET devices and free from a D.C. level shift. With the above arrangement a tone generator system of high quality for an electronic organ is provided.
摘要:
An image forming apparatus includes a light emission element, a lighting signal generation section, a storage section, a communication line, a control section and an electromagnetic noise generation source. The storage section stores data used when the lighting signal generation section generates a lighting signal. The lighting signal generation section and the storage section transmit and receive the data therebetween through the communication line. The control section that controls the transmitting and receiving of the data between the lighting signal generation section and the storage section. The control section controls so as to start the transmitting and receiving of the data between the storage section and the lighting signal generation section in a state where a magnitude of the electromagnetic noise, at a position where the lighting signal generation section is disposed, generated by the electromagnetic noise generation source is smaller than a predetermined value.