公开(公告)号：US20130341594A1

公开(公告)日：2013-12-26

申请号：US13925490

申请日：2013-06-24

Applicant: Hooman Mohseni ,  Omer G. Memis

Inventor： Hooman Mohseni ,  Omer G. Memis

IPC: H01L31/0352

CPC classification number: H01L31/109 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/035272

Abstract: Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths.

Abstract translation: 提供单光子检测器，单光子检测器阵列，使用单光子检测器的方法和制造单光子检测器的方法。 单光子检测器将大吸收体积的效率与称为“纳米注射器”的纳米级载流子注射器的灵敏度相结合。 光子检测器能够以极高的量子效率，低暗计数率和高带宽实现单光子计数。

公开(公告)号：US08445188B2

公开(公告)日：2013-05-21

申请号：US12584897

申请日：2009-09-14

Applicant: Hooman Mohseni

Inventor： Hooman Mohseni

IPC: G03F7/20

CPC classification number: G03F7/20 ,  G03F7/70383 ,  Y10T428/24273 ,  Y10T428/24893

Abstract: A photolithography method of patterning photoresist involves disposing a two-dimensional array of focusing particles of spherical or other shape on the photoresist and illuminating the particles on the photoresist to generate deep, sub-wavelength patterns on the photoresist. When developed, a positive photoresist layer generates a two-dimensional array of micro- or nano-holes on the developed photoresist. When developed, a negative photoresist layer generates a two-dimensional array of micro- or nano-pillars on the developed photoresist.

Abstract translation: 图案化光致抗蚀剂的光刻方法包括在光致抗蚀剂上设置球形或其它形状的聚焦颗粒的二维阵列，并照射光致抗蚀剂上的颗粒以在光致抗蚀剂上产生深的亚波长图案。 当显影时，正性光致抗蚀剂层在显影的光致抗蚀剂上产生微孔或纳米孔的二维阵列。 当显影时，负性光致抗蚀剂层在显影的光致抗蚀剂上产生微观或纳米柱的二维阵列。

公开(公告)号：US07745816B2

公开(公告)日：2010-06-29

申请号：US11528089

申请日：2006-09-27

Applicant: Hooman Mohseni

Inventor： Hooman Mohseni

IPC: H01L29/06 ,  H01L31/00 ,  H01L29/08

CPC classification number: H01L27/14643

Abstract: A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo-generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-injector, capable of injecting carriers into the plurality of InP/AlInGaAs/AlGaAsSb layers, where the carrier transit time in the nano-injector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect.

Abstract translation: 一种用于光子检测的半导体光电检测器，不使用雪崩倍增，并能够在低偏置电压下工作，无需过多噪声。 在一个实施例中，光电检测器包括多个InP / AlInGaAs / AlGaAsSb层，其能够在一层中空间上分离电子和光电子 - 空穴对的孔，传输照片的电子和孔中的一个 将生成的电子 - 空穴对分成另一层，将其聚焦成期望的体积并将其捕获在其中，所需体积具有纳米尺度的尺寸以减小其电容并增加捕获的载体的电位变化，以及纳米 能够将载体注入到多个InP / AlInGaAs / AlGaAsSb层中，其中纳米注射器中的载流子传播时间比其中的载流子复合时间短得多，从而导致非常大的载流子再循环效应。

公开(公告)号：US07546011B2

公开(公告)日：2009-06-09

申请号：US11545080

申请日：2006-10-06

Applicant: Martin H. Kwakernaak ,  Hooman Mohseni ,  Gary Pajer

Inventor： Martin H. Kwakernaak ,  Hooman Mohseni ,  Gary Pajer

IPC: G02B6/34 ,  G02B6/12 ,  G02B6/28 ,  G02B6/35

CPC classification number: G02B6/12019 ,  G02B6/12004 ,  G02B6/122 ,  G02B2006/12061 ,  G02B2006/121

Abstract: An optical waveguide assembly and method of forming the same is described. The optical waveguide assembly includes a waveguide, an amorphous silicon arrayed waveguide grating communicative with the waveguide, and an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating. The method includes providing a waveguide, providing an amorphous silicon arrayed waveguide grating communicative with the waveguide, and providing an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating.

Abstract translation: 描述了一种光波导组件及其形成方法。 光波导组件包括波导，与波导通信的非晶硅阵列波导光栅以及响应于非晶硅阵列波导光栅而通信地输出激光输出的集成非晶硅波导光栅激光器。 该方法包括提供波导，提供与波导通信的非晶硅阵列波导光栅，并提供集成的非晶硅波导光栅激光器，其响应于非晶硅阵列波导光栅而通信地输出激光输出。

公开(公告)号：US07026641B2

公开(公告)日：2006-04-11

申请号：US10642095

申请日：2003-08-15

Applicant: Hooman Mohseni ,  Winston Kong Chan

Inventor： Hooman Mohseni ,  Winston Kong Chan

IPC: H01L29/06

CPC classification number: B82Y10/00 ,  H01L29/127 ,  H01L29/66469 ,  H01L29/775 ,  Y10S977/774

Abstract: A method of fabricating a tunable quantum dot apparatus, comprising: forming multi-quantum wells sandwiched substantially between at least two barrier layers; spin coating a non-continuous mask onto at least one of said barrier layers; forming a gate material onto the mask, wherein the non-continuity of the mask substantially prevents formation of a continuous gate material layer; lifting off at least a portion of the gate material; self isolating the gate material; and, forming a top contact onto at least a portion of said barrier layers

Abstract translation: 一种制造可调量子点装置的方法，包括：形成基本上夹在至少两个阻挡层之间的多量子阱; 将非连续掩模旋涂到至少一个所述阻挡层上; 在所述掩模上形成栅极材料，其中所述掩模的非连续性基本上防止形成连续的栅极材料层; 卸下栅极材料的至少一部分; 自我隔离栅极材料; 以及在所述阻挡层的至少一部分上形成顶部接触

公开(公告)号：US07773840B2

公开(公告)日：2010-08-10

申请号：US11545061

申请日：2006-10-06

Applicant: Martin H. Kwakernaak ,  Winston Kong Chan ,  David Capewell ,  Hooman Mohseni

Inventor： Martin H. Kwakernaak ,  Winston Kong Chan ,  David Capewell ,  Hooman Mohseni

IPC: G02B6/26

CPC classification number: G02B6/12002 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/136 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/026 ,  H01S5/34306

Abstract: A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.

Abstract translation: 描述了将波导耦合到衬底上的多层有源器件结构的方法。 该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓，通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层，以及 在所述蚀刻的有源器件结构上沉积所述波导，其中在所述接合区域处形成倾斜的有源无源结，以减少所形成的耦合器件中的残余界面反射。 还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。 这包括沉积用作蚀刻掩模的SiN层，图案化光致抗蚀剂掩模，通过反应离子蚀刻图案化SiN层，剥离光致抗蚀剂掩模和蚀刻至少一个激光层。

公开(公告)号：US20100080954A1

公开(公告)日：2010-04-01

申请号：US12584897

申请日：2009-09-14

Applicant: Hooman Mohseni

Inventor： Hooman Mohseni

IPC: G03F7/207 ,  G03F7/20 ,  B32B5/02 ,  B32B3/10

CPC classification number: G03F7/20 ,  G03F7/70383 ,  Y10T428/24273 ,  Y10T428/24893

Abstract: A photolithography method of patterning photoresist involves disposing a two-dimensional array of focusing particles of spherical or other shape on the photoresist and illuminating the particles on the photoresist to generate deep, sub-wavelength patterns on the photoresist. When developed, a positive photoresist layer generates a two-dimensional array of micro- or nano-holes on the developed photoresist. When developed, a negative photoresist layer generates a two-dimensional array of micro- or nano-pillars on the developed photoresist.

Abstract translation: 图案化光致抗蚀剂的光刻方法包括在光致抗蚀剂上设置球形或其它形状的聚焦颗粒的二维阵列，并照射光致抗蚀剂上的颗粒以在光致抗蚀剂上产生深的亚波长图案。 当显影时，正性光致抗蚀剂层在显影的光致抗蚀剂上产生微孔或纳米孔的二维阵列。 当显影时，负性光致抗蚀剂层在显影的光致抗蚀剂上产生微观或纳米柱的二维阵列。

公开(公告)号：US20070147762A1

公开(公告)日：2007-06-28

申请号：US11545061

申请日：2006-10-06

Applicant: Martin Kwakernaak ,  Winston Chan ,  David Capewell ,  Hooman Mohseni

Inventor： Martin Kwakernaak ,  Winston Chan ,  David Capewell ,  Hooman Mohseni

IPC: G02B6/10

CPC classification number: G02B6/12002 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/136 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/026 ,  H01S5/34306

Abstract: A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.

Abstract translation: 描述了将波导耦合到衬底上的多层有源器件结构的方法。 该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓，通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层，以及 在所述蚀刻的有源器件结构上沉积所述波导，其中在所述接合区域处形成倾斜的有源无源结，以减少所形成的耦合器件中的残余界面反射。 还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。 这包括沉积用作蚀刻掩模的SiN层，图案化光致抗蚀剂掩模，通过反应离子蚀刻图案化SiN层，剥离光致抗蚀剂掩模和蚀刻至少一个激光层。

公开(公告)号：US07064881B2

公开(公告)日：2006-06-20

申请号：US10792585

申请日：2004-03-03

Applicant: Hooman Mohseni

Inventor： Hooman Mohseni

IPC: G02F1/03

CPC classification number: B82Y20/00 ,  G02F1/017 ,  G02F2001/0175

Abstract: A modulator, including: an active modulator layer including a plurality of step quantum wells, wherein at least one of the plurality of step quantum wells is configured to have a leaky electron energy state; and at least one inactive layer bounding the active modulator layer.

Abstract translation: 一种调制器，包括：有源调制器层，包括多个步长量子阱，其中所述多个步长量子阱中的至少一个被配置为具有漏电能量状态; 以及限定有源调制器层的至少一个非活性层。

公开(公告)号：US20050147356A1

公开(公告)日：2005-07-07

申请号：US11002403

申请日：2004-12-02

Applicant: Hooman Mohseni ,  Joseph Abeles ,  Martin Kwakernaak ,  Viktor Khalfin

Inventor： Hooman Mohseni ,  Joseph Abeles ,  Martin Kwakernaak ,  Viktor Khalfin

IPC: G02B20060101 ,  G02B6/26 ,  H01S5/20 ,  H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/50

CPC classification number: H01S5/22 ,  B82Y20/00 ,  G02B6/122 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/305 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/323 ,  H01S5/34306 ,  H01S5/50 ,  H01S2301/18

Abstract: A monolithic light amplification system including: an un-doped waveguide; a ridge waveguide positioned over the un-doped waveguide; and, at least a doped layer between the un-doped waveguide and ridge waveguide; wherein, the un-doped waveguide and ridge waveguide cooperate to amplify light input to the un-doped waveguide.

Abstract translation: 一种单片式光放大系统，包括：未掺杂波导; 位于未掺杂波导上的脊波导; 并且至少在未掺杂波导和脊波导之间的掺杂层; 其中，未掺杂的波导和脊波导协作放大到未掺杂波导的光输入。