摘要:
Methods and apparatuses for adaptive memory operational state management. A memory performance parameter is determined for at least a portion of a memory system. The memory performance parameter is compared to one or more threshold values. An operating frequency of the memory system can be modified based on results of the comparison of the memory performance parameter and the one or more threshold values.
摘要:
Methods and apparatuses for adaptive memory operational state management. A memory performance parameter is determined for at least a portion of a memory system. The memory performance parameter is compared to one or more threshold values. An operating frequency of the memory system can be modified based on results of the comparison of the memory performance parameter and the one or more threshold values.
摘要:
A method, device, and system are disclosed. In one embodiment the method includes grouping multiple memory requests into multiple of memory rank queues. Each rank queue contains the memory requests that target addresses within the corresponding memory rank. The method also schedules a minimum burst number of memory requests within one of the memory rank queues to be serviced when the burst number has been reached in the one of the plurality of memory rank queues. Finally, if a memory request exceeds an aging threshold, then that memory request will be serviced
摘要:
A method, device, and system are disclosed. In one embodiment the method includes grouping multiple memory requests into multiple of memory rank queues. Each rank queue contains the memory requests that target addresses within the corresponding memory rank. The method also schedules a minimum burst number of memory requests within one of the memory rank queues to be serviced when the burst number has been reached in the one of the plurality of memory rank queues. Finally, if a memory request exceeds an aging threshold, then that memory request will be serviced.
摘要:
A memory module (735) can include a memory array (105) and a memory controller (740). The memory controller (740) can include a status register (745) that specifies whether the memory module (735) is operating at normal power or low power. A normal reliability region (305, 505) and a low reliability region (310, 510) can be defined in the memory array (105), based on the power level specified by the status register (745).
摘要:
A cache memory includes cache lines to store information. The stored information is associated with physical addresses that include first, second, and third distinct portions. The cache lines are indexed by the second portions of respective physical addresses associated with the stored information. The cache memory also includes one or more tables, each of which includes respective table entries that are indexed by the first portions of the respective physical addresses. The respective table entries in each of the one or more tables are to store indications of the second portions of respective physical addresses associated with the stored information.
摘要:
Embodiments related to a cache memory that supports tagless addressing are disclosed. Some embodiments receive a request to perform a memory access, wherein the request includes a virtual address. In response, the system performs an address-translation operation, which translates the virtual address into both a physical address and a cache address. Next, the system uses the physical address to access one or more levels of physically addressed cache memory, wherein accessing a given level of physically addressed cache memory involves performing a tag-checking operation based on the physical address. If the access to the one or more levels of physically addressed cache memory fails to hit on a cache line for the memory access, the system uses the cache address to directly index a cache memory, wherein directly indexing the cache memory does not involve performing a tag-checking operation and eliminates the tag storage overhead.
摘要:
A system and method for using a Non-Volatile Dual In-Line Memory Module (NVDIMM) (110, 115) is disclosed. The NVDIMM (110, 115) can support two or more access modes. An application can specify which access mode is desired for an address space requested by the application. A Non-Volatile Memory (NVM) governor (150) can store an address mask and the access mode for the address space (305, 310, 315) in an NVM control register (155). When the application requests read or write access to an address (605), the NVM governor (150) can compare the requested address (605) with the address masks in the NVM control register (155), determine the access mode from the access mode corresponding to the matched address mask, and use that access mode to satisfy the request for the address (605).
摘要:
Apparatus and methods related to exemplary memory system are disclosed. The exemplary memory systems use a synchronization device to increase channel bus data rates while using relatively-slower memory devices operating at device bus data rates that differ from channel bus data rates.
摘要:
Embodiments related to a cache memory that supports tagless addressing are disclosed. Some embodiments receive a request to perform a memory access, wherein the request includes a virtual address. In response, the system performs an address-translation operation, which translates the virtual address into both a physical address and a cache address. Next, the system uses the physical address to access one or more levels of physically addressed cache memory, wherein accessing a given level of physically addressed cache memory involves performing a tag-checking operation based on the physical address. If the access to the one or more levels of physically addressed cache memory fails to hit on a cache line for the memory access, the system uses the cache address to directly index a cache memory, wherein directly indexing the cache memory does not involve performing a tag-checking operation and eliminates the tag storage overhead.