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    Integrated magneto-resistive sensing of bubble domains
    2.
    发明授权
    Integrated magneto-resistive sensing of bubble domains 失效
    一体化磁感应感应体系

    公开(公告)号：US3691540A

    公开(公告)日：1972-09-12

    申请号：US3691540D

    申请日：1970-10-06

    Applicant: IBM

    Inventor： ALMASI GEORGE S ,  CHANG HSU ,  KEEFE GEORGE E ,  THOMPSON DAVID A

    IPC: G11C11/14 ,  G11C19/08

    CPC classification number: G11C19/0866

    Abstract: An integrated magneto-resistive sensor for detection of magnetic bubble domains. The sensor is located on the chip in which the bubble domains propagate and can be an integral part of the propagation circuitry. Any material exhibiting a magnetoresistive effect can be used, and permalloy is a preferred material. The sensing element can be made very small, and has a length which is usually about equal to a bubble domain diameter.

    Abstract translation: 用于检测磁性气泡域的集成磁阻传感器。 传感器位于气泡区域传播的芯片上，并且可以是传播电路的组成部分。 可以使用具有磁阻效应的任何材料，坡莫合金是优选的材料。 感测元件可以制造得非常小，并且具有通常大约等于气泡直径的长度。

    Symmetric switching functions using magnetic bubble domains
    3.
    发明授权
    Symmetric switching functions using magnetic bubble domains 失效
    使用磁泡区域的对称开关功能

    公开(公告)号：US3919701A

    公开(公告)日：1975-11-11

    申请号：US35166573

    申请日：1973-04-16

    Applicant: IBM

    Inventor： CHANG HSU ,  CHEN TIEN CHI ,  TUNG CHIN

    IPC: G06F7/48 ,  G11C11/14 ,  H03K19/168 ,  G11C19/00

    CPC classification number: H03K19/168

    Abstract: A symmetric switching device which can be personalized to do any mathematical operation relying upon the mounting of the number of bubble domains present. This can be used as a universal logic element to provide any logical function. The device will handle multiple inputs and is rewritable to provide the desired function. The device broadly comprises a counter for counting the number of 1 bits in the input data stream, a means for producing a control data stream for personalizing the switch, and a comparison means for comparing the counter output and the control stream. A particularly suitable embodiment comprises a bubble domain sifter for shifting the position of the bubbles in the input data stream, a leading bubble detector for detecting the leading (first) bubble in the input data stream, means for creating a personalized control bubble stream for designating the function to be performed, and means for comparing the personalized control bubble stream with the output of the leading bubble detector to provide a circuit output representing the output value of the function desired. Means are provided for serial or parallel data inputs to the symmetric switching circuit. Any known type of domain propagation structure can be used to implement this device.

    Abstract translation: 一种对称开关装置，其可以被个性化以进行任何数学运算，这依赖于存在的气泡域的数量的安装。 这可以用作通用逻辑元件来提供任何逻辑功能。 该设备将处理多个输入，并且是可重写的，以提供所需的功能。 该设备广泛地包括用于对输入数据流中的1位数进行计数的计数器，用于产生用于个性化该开关的控制数据流的装置，以及用于比较计数器输出和控制流的比较装置。 特别合适的实施例包括用于移动输入数据流中的气泡位置的气泡域筛选器，用于检测输入数据流中的引导（第一）气泡的前导气泡检测器，用于创建个性化控制气泡流的装置，用于指定 要执行的功能，以及用于将个性化控制气泡流与前导气泡检测器的输出进行比较以提供表示所需功能的输出值的电路输出的装置。 提供用于对称开关电路的串行或并行数据输入的装置。 可以使用任何已知类型的域传播结构来实现该设备。

    Cylindrical magnetic domain decoder
    4.
    发明授权
    Cylindrical magnetic domain decoder 失效
    圆柱磁场解码器

    公开(公告)号：US3689902A

    公开(公告)日：1972-09-05

    申请号：US3689902D

    申请日：1971-06-30

    Applicant: IBM

    Inventor： CHANG HSU ,  KEEFE GEORGE E ,  LIN YEONG S ,  ROSIER LAURENCE L

    IPC: G11C19/08 ,  H03M7/00 ,  G11C11/14 ,  G11C19/00

    CPC classification number: G11C19/0875 ,  H03M7/002

    Abstract: A decoder for cylindrical magnetic domain shift registers having means to clear the information from selected registers thus enabling new information to be written into those registers. The decoder is incorporated into 2N closed loop shift registers and uses only a small part of the storage area of the magnetic sheet in which domains exist. It is activated by 2N control lines (N pairs). Depending upon the activation of the decoder, the information in a selected shift register is passed to a clear means which sends it into one of two paths depending upon the activation of the clear means. One path brings the information to a detector for destructive readout, while the other path brings the information to a domain splitter. The domain splitter splits the input domains into two parts, one of which propagates to the detector while the other returns to the proper shift register. Thus, non-destructive readout (NDRO) or destructive read-out (DRO) is provided depending upon the activation of the clear means.

    Abstract translation: 用于圆柱形磁畴移位寄存器的解码器具有从所选择的寄存器清除信息的装置，从而使新信息能够写入这些寄存器。 解码器被并入2N闭环移位寄存器中，并且仅使用存在域的磁性片的存储区域的一小部分。 它由2N个控制线（N对）激活。 根据解码器的激活，所选择的移位寄存器中的信息被传递到清除装置，根据清除装置的激活将其发送到两个路径之一。 一条路径将信息提供给检测器以进行破坏性读出，而另一条路径将信息带到域分割器。 域分配器将输入域分成两部分，其中一个传播到检测器，而另一个返回到适当的移位寄存器。 因此，根据清除装置的激活，提供非破坏性读出（NDRO）或破坏性读出（DRO）。

    High density thin film memory and method of operation
    5.
    发明授权
    High density thin film memory and method of operation 失效
    高密度薄膜存储器和操作方法

    公开(公告)号：US3573760A

    公开(公告)日：1971-04-06

    申请号：US3573760D

    申请日：1968-12-16

    Applicant: IBM

    Inventor： CHANG HSU ,  GREBE KURT R

    IPC: G09F3/06 ,  G11C5/02 ,  G11C11/14 ,  G11C11/15 ,  G11C11/155 ,  G11C11/16 ,  G11C11/56 ,  H01F10/00

    CPC classification number: G11C11/14 ,  G09F3/06 ,  G11C5/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/00

    Abstract: A multilayer, multithreshold magnetic film memory element is disclosed which consists of a number of superposed magnetic storage layers which share the same word and bit-sense lines. Operation of the element is essentially in the orthogonal drive mode and requires the application of different amplitude pulses on the word line to separately energize each of the storage films of the memory element. Thus, for readout of stored information, the amplitude of a succeeding read pulse increases relative to the amplitude of the preceding read pulse. Each ascending step in the read pulses provides sufficient magnetic field to overcome the rotational switching threshold of a storage film, but insufficient magnetic field to overcome the rotational switching threshold of the next storage film. For writing, each succeeding pulse after the initial pulse is lower in amplitude than the preceding pulse and is applied in coincidence with one bit pulse. Only one layer at a time is switched; the magnetization direction thereof being determined by the polarity of each bit pulse. Several embodiments of a multilayer magnetic elements are shown all of which are capable of storing multiple bits of information at the intersection of a single word line and a single bit-sense line. The method of operating multilayer memory elements in conjunction with an array of these elements is also disclosed.

    Self-contained magnetic bubble domain memory chip
    7.
    发明授权
    Self-contained magnetic bubble domain memory chip 失效
    自含磁性泡泡内存芯片

    公开(公告)号：US3701125A

    公开(公告)日：1972-10-24

    申请号：US3701125D

    申请日：1970-12-31

    Applicant: IBM

    Inventor： CHANG HSU ,  GENOVESE EUGENE R

    IPC: G11C19/08 ,  H03K19/168 ,  H03M7/00 ,  G11C11/14

    CPC classification number: H03K19/168 ,  G11C19/0883 ,  H03M7/002

    Abstract: A complete on-chip memory system for cylindrical bubble domains and a magnetic chip decoder for the system. Write and read decoding, memory storage, and sensing are provided on a single magnetic chip with a minimum number of interconnections and ease of fabrication. Decoding is achieved using magnetic overlays for propagation and current loops to provide selective switching at various locations. N control lines enable selective connections between 2N domain generators and 2N shift registers. The decoders have 2N double propagation channels, each of which has two parallel paths. One path connects a generator to a shift register while the other path terminates in a bubble buster. Each shift register comprises a storage loop having bubble splitters, thus enabling NDRO. The storage loops are connected to a double propagation channel in a read decoder. Sensing means are connected to the output of the read decoder.

    Abstract translation: 用于圆柱形气泡区域的完整的片上存储器系统和用于该系统的磁芯解码器。 在单个磁芯上提供写和读解码，存储器和感测，其具有最少数量的互连和易于制造。 使用用于传播和电流回路的磁覆盖实现解码，以在各个位置提供选择性切换。 N个控制线使2N个域发生器和2N个移位寄存器之间能够进行选择性连接。 解码器具有2N个双重传播通道，每个传播通道具有两个平行路径。 一条路径将发生器连接到移位寄存器，而另一条路径终止于气泡破坏器。 每个移位寄存器包括具有气泡分离器的存储回路，从而实现NDRO。 存储环路连接到读取解码器中的双重传播通道。 感测装置连接到读取解码器的输出端。

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