公开(公告)号：US3920483A

公开(公告)日：1975-11-18

申请号：US52711574

申请日：1974-11-25

Applicant: IBM

Inventor： JOHNSON JR CLAUDE ,  KU SAN-MEI ,  LILLJA HAROLD VINELL ,  SHIH-TO PAN EDWARD

IPC: H01L21/266 ,  G03F7/40 ,  H01L21/00 ,  H01L21/56 ,  H01L21/26

CPC classification number: H01L21/00 ,  G03F7/40 ,  H01L21/56 ,  H01L2924/0002 ,  Y10S148/131 ,  H01L2924/00

Abstract: An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.

Abstract translation: 通过光致抗蚀剂掩模将离子注入半导体衬底的方法的改进，其中在离子注入步骤之前对光致抗蚀剂掩模进行RF气体等离子体氧化一段足以减小光致抗蚀剂层厚度的时间。 然后通过经处理的光致抗蚀剂掩模进行离子注入。

公开(公告)号：US3887994A

公开(公告)日：1975-06-10

申请号：US37529573

申请日：1973-06-29

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES A

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/322 ,  H01L21/336 ,  H01L23/522 ,  H01L23/532 ,  B01J17/00 ,  H01L7/54 ,  H01L11/14

CPC classification number: H01L29/66568 ,  H01L21/31055 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S257/913 ,  Y10S438/91 ,  H01L2924/00

Abstract: Non-doping ions are implanted in the electrode layer of a semiconductor to reduce contamination of the electrode layer by mobile ions. The dosage of the ions is selected to prevent an increase in the fast surface state density when the ions are implanted. The energy level at which the ions are implanted is controlled to position all of the implanted ions within the electrode layer.

Abstract translation: 非掺杂离子注入到半导体的电极层中以减少电极层被移动离子的污染。 选择离子的剂量以防止离子注入时快速表面状态密度的增加。 控制离子注入的能级被控制以将所有注入的离子置于电极层内。

公开(公告)号：US3925106A

公开(公告)日：1975-12-09

申请号：US42853773

申请日：1973-12-26

Applicant: IBM

Inventor： KU SAN-MEI ,  MASTERS BURTON J

IPC: H01L27/04 ,  H01L21/00 ,  H01L21/265 ,  H01L21/822 ,  H01L29/66 ,  H01L29/8605 ,  H01L7/44

CPC classification number: H01L29/8605 ,  H01L21/00 ,  Y10S148/024 ,  Y10S438/934

Abstract: A method for producing integrated circuit resistors of relatively high resistivity which are temperature stable, i.e., have a low temperature coefficient of resistance at operating temperatures. The resistor is formed in a selected region of an integrated circuit substrate through the introduction of appropriate dopant ions by standard ion implantation or diffusion techniques. However, the concentration of such introduced dopant ions is in excess of the concentration ordinarily required by such techniques. The region into which such dopant ions are introduced is subjected to a bombardment with non-dopant ions at a dose which is sufficient to damage the crystal structure of the region but insufficient to form an amorphous phase in this bombarded region; the bombardment may be carried out either before, after or, where appropriate, even simultaneously with the introduction of the dopant ions. As a result of this ion bombardment, the sheet resistance of the resistor region becomes substantially higher than the selected resistance despite the presence of excess dopant ions. Then, the substrate is heated at a temperature of from 500*C. to 800*C. for a time sufficient to partially anneal the damage so as to lower the sheet resistance of the region to the selected sheet resistance. The annealing time/temperature cycle is carried out so as to maintain the temperature coefficient of resistance below the temperature coefficient of resistance for conventional high resistivity resistors produced by ion implantation or diffusion.

公开(公告)号：US3890455A

公开(公告)日：1975-06-17

申请号：US26594872

申请日：1972-06-23

Applicant: IBM

Inventor： BALLAS DONALD F ,  KU SAN-MEI ,  MARINACE JOHN C

IPC: C23C18/48 ,  H01L21/288 ,  H01L7/00 ,  B05D5/12

CPC classification number: H01L21/288 ,  C23C18/48 ,  Y10S148/065

Abstract: Disclosed is a method of electrolessly plating an alloy onto a substrate. To plate an alloy consisting of two elements requires the steps of mixing two solutions, each containing one of the elements to be alloy plated, and immersing a surface to be plated in said mixed solution for a fixed period of time until a desired thickness of alloy has been plated onto the surface.

Abstract translation: 公开了将合金无电镀在基板上的方法。 为了镀覆由两种元素组成的合金，需要混合两种溶液的步骤，每种溶液含有要镀合金的元素之一，并将待镀的表面浸入所述混合溶液中一段固定的时间，直到所需的合金厚度 已被镀在表面上。