公开(公告)号：US3919060A

公开(公告)日：1975-11-11

申请号：US47932174

申请日：1974-06-14

Applicant: IBM

Inventor： POGGE H BERNHARD ,  POPONIAK MICHAEL R

IPC: H01L27/00 ,  C25F3/12 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  C25F3/00

CPC classification number: H01L21/76264 ,  C25F3/12 ,  H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/306 ,  H01L21/31662 ,  H01L21/7627 ,  H01L21/76281 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/117 ,  Y10S438/911

Abstract: A semiconductor fabrication method for producing dielectrically isolated silicon regions wherein high conductivity regions surrounding device regions to be electrically isolated are produced in a silicon body, the high conductivity regions anodically etched in a solution to selectively produce regions of porous silicon, the body exposed to an oxidizing environment while heated to an elevated temperature to oxidize the resultant porous silicon regions.

Abstract translation: 一种半导体制造方法，用于制造介电隔离的硅区域，其中在硅体中产生围绕要被电隔离的器件区域的高导电性区域，在溶液中阳极蚀刻的高导电性区域以选择性地产生多孔硅的区域， 氧化环境，同时加热到升高的温度以氧化所得的多孔硅区域。

公开(公告)号：US3669769A

公开(公告)日：1972-06-13

申请号：US3669769D

申请日：1970-09-29

Applicant: IBM

Inventor： BADAMI ANGELO V ,  EBERT EKKEHARD ,  KEMLAGE BERNARD M ,  KROELL KARL E ,  POGGE H BERNHARD

IPC: C30B25/02 ,  H01L21/205 ,  H01L21/22 ,  H01L7/36 ,  C23C13/00

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/145 ,  Y10S438/916

Abstract: AUTODOPING IS MINIMIZED DURING THE GROWTH OF AN EPITAXIAL LAYER OF A SEMICONDUCTOR SUBSTRATE BY USING A GASEOUS REACTION MIXTURE THAT DEPOSITS THE INITIAL CAPPING LAYER AT A RELATIVELY SLOW DEPOSITION RATE. THE REACTION MIXTURE CONTAINS A RELATIVELY MINOR PORTION OF A SEMICONDUCTOR COMPOUND ALONG WITH THE CARRIER GAS. SUBSEQUENTLY, A SECOND GASEOUS REACTION MIXTURE CONTAINING A GREATER PORTION OF A COMPOUND OF A SEMICONDUCTOR MATERIAL IS USED TO COMPLETE THE DEPOSITION OF THE EPITXIAL LAYER. THIS IS DONE MERELY TO REDUCE THE TOTAL GROWTH CYCLE.