公开(公告)号：US3919060A

公开(公告)日：1975-11-11

申请号：US47932174

申请日：1974-06-14

Applicant: IBM

Inventor： POGGE H BERNHARD ,  POPONIAK MICHAEL R

IPC: H01L27/00 ,  C25F3/12 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  C25F3/00

CPC classification number: H01L21/76264 ,  C25F3/12 ,  H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/306 ,  H01L21/31662 ,  H01L21/7627 ,  H01L21/76281 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/117 ,  Y10S438/911

Abstract: A semiconductor fabrication method for producing dielectrically isolated silicon regions wherein high conductivity regions surrounding device regions to be electrically isolated are produced in a silicon body, the high conductivity regions anodically etched in a solution to selectively produce regions of porous silicon, the body exposed to an oxidizing environment while heated to an elevated temperature to oxidize the resultant porous silicon regions.

Abstract translation: 一种半导体制造方法，用于制造介电隔离的硅区域，其中在硅体中产生围绕要被电隔离的器件区域的高导电性区域，在溶液中阳极蚀刻的高导电性区域以选择性地产生多孔硅的区域， 氧化环境，同时加热到升高的温度以氧化所得的多孔硅区域。

公开(公告)号：US3590372A

公开(公告)日：1971-06-29

申请号：US3590372D

申请日：1968-12-26

Applicant: IBM

Inventor： DESANTIS DOMINIC P ,  DESSAUER RALPH G ,  GOREY EDWARD F ,  POPONIAK MICHAEL R ,  SCHNEIDER CHRISTIAN P ,  SCHUMANN PAUL A JR

IPC: G01R27/00 ,  G01N27/04 ,  G01R1/067 ,  G01R31/28 ,  H01L21/66 ,  G01R27/14

CPC classification number: G01R31/2831 ,  G01N27/041 ,  G01R1/06705

Abstract: A three-point probe is employed to determine the spreading resistance of a material with the spreading resistance probe, which is common to both the current source and a voltage measuring means, being moved into engagement with the material after the other two probes are in engagement with the material. The velocity with which each of the probes engages the material is controlled and is variable. To ascertain that a good contact has been made by the spreading resistance probe and the magnitude of the current flowing through the material from the current source, the voltage measuring means is connected across resistance means in the wire from the current source to the spreading resistance probe and current is directed through the resistance means in opposite directions by flowing through the material between the spreading resistance probe and one of the other two probes. After the magnitude of the current has been determined, the voltage measuring means is connected to the spreading resistance probe adjacent its contact to the material and to the other of the two probes, which is not connected to the current source, to determine the voltage drop through the material due to current from the current source flowing in opposite directions through the material. The amount of difference between the two voltage readings on the specimen indicates if good contact is achieved.

公开(公告)号：US3493770A

公开(公告)日：1970-02-03

申请号：US3493770D

申请日：1966-03-01

Applicant: IBM

Inventor： DESSAUER RALPH G ,  PATZNER EUGENE J ,  POPONIAK MICHAEL R

IPC: C30B15/26 ,  H01L21/208 ,  H01J39/12 ,  G01N21/26

CPC classification number: C30B15/26 ,  Y10T117/1008 ,  Y10T117/1072

公开(公告)号：US3929529A

公开(公告)日：1975-12-30

申请号：US53091074

申请日：1974-12-09

Applicant: IBM

Inventor： POPONIAK MICHAEL R

IPC: H01L21/306 ,  H01L21/316 ,  H01L21/322 ,  H01L7/52

CPC classification number: H01L21/02016 ,  H01L21/0203 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/31662 ,  H01L21/3221 ,  Y10S148/015 ,  Y10S148/024 ,  Y10S148/037 ,  Y10S148/06 ,  Y10S148/085 ,  Y10S148/117 ,  Y10S148/118 ,  Y10S148/122 ,  Y10S438/923 ,  Y10S438/96 ,  Y10S438/969

Abstract: A method for removing fast diffusing metal contaminants from a monocrystalline silicon body by (1) anodizing at least one side of the body in an aqueous liquid bath under conditions that result in the formation of a porous silicon surface layer, (2) annealing the resultant structure in a non-oxidizing environment, and (3) exposing the body to an oxidizing environment to oxidize the porous silicon layer to SiO2, or alternatively forming a capping layer over the porous silicon layer.

Abstract translation: 一种用于通过（1）在导致形成多孔硅表面层的条件下在水性液体浴中阳极氧化身体的至少一侧来消除单晶硅体中的快速扩散金属污染物的方法，（2）对所得物 结构在非氧化环境中，和（3）将体暴露于氧化环境以将多孔硅层氧化成SiO 2，或者在多孔硅层上形成覆盖层。