公开(公告)号：US20220037561A1

公开(公告)日：2022-02-03

申请号：US17280045

申请日：2019-09-26

Applicant: IDEMITSU KOSAN CO.,LTD. ,  NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  NIKKISO CO., LTD.

Inventor： Yoshihiro UEOKA ,  Shigekazu TOMAI ,  Satoshi KATSUMATA ,  Maki KUSHIMOTO ,  Manato DEKI ,  Yoshio HONDA ,  Hiroshi AMANO

IPC: H01L33/42

Abstract: A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10−2 S/cm or more.

公开(公告)号：US20220002205A1

公开(公告)日：2022-01-06

申请号：US17289975

申请日：2019-10-30

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Shigekazu TOMAI ,  Yoshihiro UEOKA ,  Satoshi KATSUMATA ,  Kenichi SASAKI ,  Masashi OYAMA

IPC: C04B35/453

Abstract: A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.

公开(公告)号：US20190006473A1

公开(公告)日：2019-01-03

申请号：US16064210

申请日：2016-12-21

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yuki TSURUMA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yoshihiro UEOKA

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/02 ,  H01L29/812

CPC classification number: H01L29/247 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872

Abstract: A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n

公开(公告)号：US20220393073A1

公开(公告)日：2022-12-08

申请号：US17775115

申请日：2020-11-02

Applicant: IDEMITSU KOSAN CO.,LTD. ,  NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  NIKKISO CO., LTD.

Inventor： Shigekazu TOMAI ,  Yoshihiro UEOKA ,  Satoshi KATSUMATA ,  Maki KUSHIMOTO ,  Manato DEKI ,  Yoshio HONDA ,  Hiroshi AMANO

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/12

Abstract: A stacked body may include a support, a buffer layer, and an electrode layer, in this order, wherein the buffer layer may include one or more metals selected from the group consisting of Ga, Al, In, and Zn, and oxygen, the electrode layer comprises an oxide of magnesium and an oxide of zinc, and the electrode layer has a half width of a diffraction peak observed at 2θ=34.8±0.5 deg in X-ray diffraction measurement of 0.43 deg or smaller.

公开(公告)号：US20200266304A1

公开(公告)日：2020-08-20

申请号：US16065239

申请日：2016-12-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yoshihiro UEOKA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Motohiro TAKESHIMA

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/786

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

公开(公告)号：US20190237556A1

公开(公告)日：2019-08-01

申请号：US16341055

申请日：2017-10-11

Applicant: Idemitsu Kosan Co., Ltd.

Inventor： Yuki TSURUMA ,  Emi KAWASHIMA ,  Yoshikazu NAGASAKI ,  Takashi SEKIYA ,  Yoshihiro UEOKA

IPC: H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/108

CPC classification number: H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/10 ,  H01L31/108 ,  Y02E10/50

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

公开(公告)号：US20190013389A1

公开(公告)日：2019-01-10

申请号：US16065943

申请日：2016-12-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Emi KAWASHIMA ,  Takashi SEKIYA ,  Yuki TSURUMA ,  Yoshihiro UEOKA ,  Shigekazu TOMAI ,  Motohiro TAKESHIMA

IPC: H01L29/47 ,  H01L29/872 ,  H01L29/868

CPC classification number: H01L29/47 ,  H01L21/28 ,  H01L21/44 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/24 ,  H01L29/247 ,  H01L29/66143 ,  H01L29/868 ,  H01L29/872

Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

公开(公告)号：US20220356118A1

公开(公告)日：2022-11-10

申请号：US17622391

申请日：2020-06-24

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Shigekazu TOMAI ,  Yoshihiro UEOKA ,  Satoshi KATSUMATA ,  Kenichi SASAKI

IPC: C04B35/453 ,  C04B35/64 ,  C23C14/34 ,  C23C14/08

Abstract: An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.