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公开(公告)号：US20220392683A1
公开(公告)日：2022-12-08
申请号：US17804550
申请日：2022-05-27
Applicant: IMEC VZW
Inventor： Florin Ciubotaru , Hanns Christoph Adelmann
Abstract: The disclosed technology relates to a logic device based on spin waves. In one aspect, the logic device includes a spin wave generator, a waveguide, at least two phase shifters, and an output port. The spin wave generator is connected with the waveguide and is configured to emit a spin wave in the waveguide. The at least two phase shifters are connected with the waveguide at separate positions such that, when a spin wave is emitted by the spin wave generator, it passes via the phase shifters. The at least two phase shifters are configured to change a phase of the passing spin wave. The output port is connected with the wave guide such that the at least two phase shifters are present between the spin wave generator and the output port.
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公开(公告)号：US20180329289A1
公开(公告)日：2018-11-15
申请号：US15979800
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Emily Gallagher , Cedric Huyghebaert , Ivan Pollentier , Hanns Christoph Adelmann , Marina Timmermans , Jae Uk Lee
IPC: G03F1/64 , C01B32/159 , G03F1/22
Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
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公开(公告)号：US11092886B2
公开(公告)日：2021-08-17
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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公开(公告)号：US10731234B2
公开(公告)日：2020-08-04
申请号：US16107343
申请日：2018-08-21
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Hanns Christoph Adelmann , Vicky Philipsen , Kim Vu Luong
IPC: G03F1/54 , C22C19/03 , C22C5/04 , C22C12/00 , C22C19/07 , C22C28/00 , C22C45/00 , G03F1/24 , C22C45/04
Abstract: Example embodiments relate to extreme ultraviolet absorbing alloys. One example embodiment includes an alloy. The alloy includes one or more first elements selected from: a first list consisting of: Ag, Ni, Co, and Fe; and a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt. The alloy also includes one or more second elements selected from: the first list, if the one or more first elements are not selected from the first list; and a third list consisting of Sb and Te. An atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list.
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公开(公告)号：US10439616B2
公开(公告)日：2019-10-08
申请号：US15849372
申请日：2017-12-20
Applicant: IMEC VZW , Katholieke Universiteit Leuven
Inventor： Odysseas Zografos , Bart Soree , Florin Ciubotaru , Hanns Christoph Adelmann
IPC: H03K19/23 , G06F1/04 , H03K19/168 , G01R33/12 , G01R33/18
Abstract: The disclosed technology generally relates to computation devices, and more particularly to majority gate devices configured for computation based on spin waves. In one aspect, a majority gate device comprises cells that are configurable as spin wave generators or spin wave detectors. The majority gate device comprises an odd number of spin wave generators, and at least one spin wave detector. The majority gate device additionally comprises a waveguide adapted for guiding spin waves generated by the spin wave generators. The spin wave generators and the at least one spin wave detector are positioned in an inline configuration along the waveguide such that, in operation, interference of the spin waves generated by the spin wave generators can be detected by the at least one spin wave detector. The interference of the spin waves corresponds to a majority operation of the spin waves generated by the spin wave generators.
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Patent Agency Ranking
公开(公告)号：US20190078177A1
公开(公告)日：2019-03-14
申请号：US16107343
申请日：2018-08-21
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Hanns Christoph Adelmann , Vicky Philipsen , Kim Vu Luong
CPC classification number: C22C19/03 , C22C5/04 , C22C12/00 , C22C19/07 , C22C28/00 , C22C45/003 , C22C45/04 , C22C2200/04 , G03F1/24 , G03F1/54
Abstract: Example embodiments relate to extreme ultraviolet absorbing alloys. One example embodiment includes an alloy. The alloy includes one or more first elements selected from: a first list consisting of: Ag, Ni, Co, and Fe; and a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt. The alloy also includes one or more second elements selected from: the first list, if the one or more first elements are not selected from the first list; and a third list consisting of Sb and Te. An atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list.
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公开(公告)号：US10033078B2
公开(公告)日：2018-07-24
申请号：US15604314
申请日：2017-05-24
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Florin Ciubotaru , Hanns Christoph Adelmann , Xiao Sun
Abstract: The present disclosure relates to a tunable magnonic crystal device comprising a spin wave waveguide, a magnonic crystal structure in or on the spin wave waveguide, and a magneto-electric cell operably connected to the magnonic crystal structure. The magnonic crystal structure is adapted for selectively filtering a spin wave spectral component of a spin wave propagating through the spin wave waveguide so as to provide a filtered spin wave. The magneto-electric cell comprises an electrode for receiving a control voltage, and adjusting the control voltage controls a spectral parameter of the spectral component of the spin wave via an interaction, dependent on the control voltage, between the magneto-electric cell and a magnetic property of the magnonic crystal structure.
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公开(公告)号：US11599138B2
公开(公告)日：2023-03-07
申请号：US16593917
申请日：2019-10-04
Applicant: IMEC vzw , Katholieke Universiteit Leuven
Inventor： Hanns Christoph Adelmann , Jose Diogo Costa , Florin Ciubotaru
Abstract: An arrangement for use in a matrix-vector-multiplier, comprising a stack of material layers arranged on a substrate, and a waveguide element formed in at least one material layer in the stack is disclosed. In one aspect, the arrangement further comprises a transducer arrangement which is coupled to the waveguide element. The transducer arrangement is configured to generate and detect spin wave(s) in the waveguide element, and wherein the waveguide element is configured to confine and to provide interference of the at spin wave(s) propagating therein. The arrangement further comprises a control mechanism comprising at least one control element coupled to the waveguide element, and a direct current electric source coupled to the at least one control element. The control mechanism, via the at least one control element, is configured to modify the phase velocity of the spin wave(s) propagating in the waveguide element.
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公开(公告)号：US10749106B2
公开(公告)日：2020-08-18
申请号：US15801213
申请日：2017-11-01
Applicant: IMEC VZW
Inventor： Hanns Christoph Adelmann , Gouri Sankar Kar , Johan Swerts , Sebastien Couet
Abstract: The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices comprising a magnetic tunnel junction (MTJ). In an aspect, a method of forming a magnetoresistive random access memory (MRAM) includes forming a layer stack above a substrate, where the layer stack includes a ferromagnetic reference layer, a tunnel barrier layer and a ferromagnetic free layer and a spin-orbit-torque (SOT)-generating layer. The method additionally includes, subsequent to forming the layer stack, patterning the layer stack to form a MTJ pillar.
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公开(公告)号：US20180329291A1
公开(公告)日：2018-11-15
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
IPC: G03F1/64
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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