公开(公告)号：US11968841B2

公开(公告)日：2024-04-23

申请号：US17650154

申请日：2022-02-07

Applicant: IMEC vzw

Inventor： Mihaela Ioana Popovici ,  Amey Mahadev Walke ,  Jan Van Houdt

IPC: H10B53/30 ,  H01L29/78 ,  H01L49/02

CPC classification number: H10B53/30 ,  H01L28/40 ,  H01L29/78391

Abstract: A ferroelectric device, for instance, a metal-ferroelectric-metal (MFM) capacitor, a ferroelectric random access memory (Fe-RAM), or a ferroelectric field effect transistor (FeFET), is provided. In one aspect, the ferroelectric device is based on hafnium zirconate (HZO). The ferroelectric device can include a first electrode and a second electrode, and a doped HZO layer, which is arranged between the first electrode and the second electrode. The doped HZO layer can include a ferroelectric layer and at least two non-zero remnant polarization charge states. The doped HZO layer can be doped with at least two different elements selected from the lanthanide series, or with a combination of at least one element selected from the lanthanide series and at least one rare earth element.

公开(公告)号：US20190180934A1

公开(公告)日：2019-06-13

申请号：US16184525

申请日：2018-11-08

Applicant: IMEC VZW

Inventor： Mihaela Ioana Popovici

IPC: H01G4/008 ,  H01G4/10

Abstract: Example embodiments relate to capacitors that include metal nanoparticles. One embodiment includes a method for making a capacitor. The method includes providing a first electrode. The method also includes providing a first dielectric layer over the first electrode. Further, the method includes providing a layer of metal nanoparticles over the first dielectric layer. In addition, the method includes completely covering the metal nanoparticles with a further dielectric layer. Yet further, the method includes providing a second electrode over the further dielectric layer. A concentration of the metal nanoparticles within the layer of metal nanoparticles is from 0.05 to 1.5 times a percolation threshold.

公开(公告)号：US20230200078A1

公开(公告)日：2023-06-22

申请号：US18065335

申请日：2022-12-13

Applicant: IMEC VZW

Inventor： Mihaela Ioana Popovici ,  Jan Van Houdt ,  Amey Mahadev Walke ,  Gouri Sankar Kar ,  Jasper Bizindavyi

IPC: H10B51/00 ,  H01L29/786 ,  H01L27/12 ,  C23C16/455

CPC classification number: H01L27/11585 ,  C23C16/45536 ,  H01L27/1222 ,  H01L28/60 ,  H01L29/7869

Abstract: Example embodiments relate to ferroelectric devices. An example ferroelectric device layer structure includes a first electrode. The ferroelectric device layer structure also includes a second electrode. Additionally, the ferroelectric device layer structure includes a ferroelectric layer of hafnium zirconate (HZO). Further, the ferroelectric device layer structure includes an oxide layer of Nb2O5 or Ta2O5 arranged on the ferroelectric layer. The ferroelectric layer and the oxide layer are arranged between the first electrode and the second electrode.

公开(公告)号：US11910725B2

公开(公告)日：2024-02-20

申请号：US17121279

申请日：2020-12-14

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Bart Vermeulen ,  Mihaela Ioana Popovici ,  Koen Martens ,  Gouri Sankar Kar

IPC: H10N50/85 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10N50/85 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

Abstract: The present disclosure relates to magnetic devices. In particular, the disclosure relates to magnetic memory and logic devices that employ the voltage control of magnetic anisotropy (VCMA) effect for magnetization switching. The present disclosure provides a method for manufacturing a magnetic structure for such a magnetic device. The method comprising the following steps: providing a bottom electrode layer, forming a SrTiO3 (STO) stack on the bottom electrode layer by atomic layer deposition (ALD) of at least two different STO nanolaminates, forming a magnetic layer on the STO stack, and forming a perpendicular magnetic anisotropy (PMA) promoting layer on the magnetic layer, the PMA promoting layer being configured to promote PMA in the magnetic layer.

公开(公告)号：US11075261B2

公开(公告)日：2021-07-27

申请号：US16677309

申请日：2019-11-07

Applicant: IMEC vzw

Inventor： Mihaela Ioana Popovici ,  Ludovic Goux ,  Gouri Sankar Kar

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/02 ,  H01L21/285

Abstract: The disclosed technology relates to a structure for use in a metal-insulator-metal capacitor. In one aspect, the structure comprises a bottom electrode formed of a Ru layer. The Ru layer has a top surface characterized by a grazing incidence X-ray diffraction spectrum comprising a first intensity and a second intensity, the first intensity corresponding to a diffracting plane of Miller indices (0 0 2) being larger than the second intensity corresponding to a diffracting plane of Miller indices (1 0 1). The structure further comprises an interlayer on the top surface of the Ru layer, the interlayer being formed of an oxide of Sr and Ru having a cubic lattice structure, and a dielectric layer on the interlayer, the dielectric layer being formed of an oxide of Sr and Ti.

公开(公告)号：US20220254795A1

公开(公告)日：2022-08-11

申请号：US17650154

申请日：2022-02-07

Applicant: IMEC vzw

Inventor： Mihaela Ioana Popovici ,  Amey Mahadev Walke ,  Jan Van Houdt

IPC: H01L27/11507 ,  H01L49/02 ,  H01L29/78

Abstract: A ferroelectric device, for instance, a metal-ferroelectric-metal (MFM) capacitor, a ferroelectric random access memory (Fe-RAM), or a ferroelectric field effect transistor (FeFET), is provided. In one aspect, the ferroelectric device is based on hafnium zirconate (HZO). The ferroelectric device can include a first electrode and a second electrode, and a doped HZO layer, which is arranged between the first electrode and the second electrode. The doped HZO layer can include a ferroelectric layer and at least two non-zero remnant polarization charge states. The doped HZO layer can be doped with at least two different elements selected from the lanthanide series, or with a combination of at least one element selected from the lanthanide series and at least one rare earth element.

公开(公告)号：US20240015984A1

公开(公告)日：2024-01-11

申请号：US18349046

申请日：2023-07-07

Applicant: IMEC VZW

Inventor： Mihaela Ioana Popovici ,  Jasper Bizindavyi ,  Jan Van Houdt ,  Romain Delhougne

IPC: H10B53/30 ,  H10B51/30 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC classification number: H10B53/30 ,  H10B51/30 ,  H01L29/40111 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: The present disclosure generally relates to a ferroelectric device, and more particularly to a ferroelectric device including a layer stack. According to embodiments, the ferroelectric device comprises a first electrode and a second electrode, and the layer stack arranged between the first electrode and the second electrode. The layer stack comprises a titanium oxide layer, a doped HZO layer arranged on the titanium oxide layer, and a niobium oxide layer arranged on the doped HZO layer.

公开(公告)号：US20210210678A1

公开(公告)日：2021-07-08

申请号：US17121279

申请日：2020-12-14

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Bart Vermeulen ,  Mihaela Ioana Popovici ,  Koen Martens ,  Gouri Sankar Kar

IPC: H01L43/10 ,  H01F10/32 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

Abstract: The present disclosure relates to magnetic devices. In particular, the disclosure relates to magnetic memory and logic devices that employ the voltage control of magnetic anisotropy (VCMA) effect for magnetization switching. The present disclosure provides a method for manufacturing a magnetic structure for such a magnetic device. The method comprising the following steps: providing a bottom electrode layer, forming a SrTiO3 (STO) stack on the bottom electrode layer by atomic layer deposition (ALD) of at least two different STO nanolaminates, forming a magnetic layer on the STO stack, and forming a perpendicular magnetic anisotropy (PMA) promoting layer on the magnetic layer, the PMA promoting layer being configured to promote PMA in the magnetic layer.

公开(公告)号：US20200176554A1

公开(公告)日：2020-06-04

申请号：US16677309

申请日：2019-11-07

Applicant: IMEC vzw

Inventor： Mihaela Ioana Popovici ,  Ludovic Goux ,  Gouri Sankar Kar

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/02 ,  H01L21/285

Abstract: The disclosed technology relates to a structure for use in a metal-insulator-metal capacitor. In one aspect, the structure comprises a bottom electrode formed of a Ru layer. The Ru layer has a top surface characterized by a grazing incidence X-ray diffraction spectrum comprising a first intensity and a second intensity, the first intensity corresponding to a diffracting plane of Miller indices (0 0 2) being larger than the second intensity corresponding to a diffracting plane of Miller indices (1 0 1). The structure further comprises an interlayer on the top surface of the Ru layer, the interlayer being formed of an oxide of Sr and Ru having a cubic lattice structure, and a dielectric layer on the interlayer, the dielectric layer being formed of an oxide of Sr and Ti.