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公开(公告)号：US08674800B2
公开(公告)日：2014-03-18
申请号：US13967053
申请日：2013-08-14
Applicant: Infineon Technologies AG
Inventor： Stefan Willkofer , Uwe Wahl , Bernhard Knott , Markus Hammer , Andreas Strasser
CPC classification number: H01L23/4952 , H01F2017/0086 , H01L23/48 , H01L23/49575 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L28/10 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/4903 , H01L2224/49107 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01322 , H01L2924/14 , H01L2924/19042 , H01L2924/19102 , H01L2924/19104 , H01L2924/19107 , Y10T29/4902 , H01L2924/00 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。
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公开(公告)号：US09915707B2
公开(公告)日：2018-03-13
申请号：US15433524
申请日：2017-02-15
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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公开(公告)号：US09620707B2
公开(公告)日：2017-04-11
申请号：US14688177
申请日：2015-04-16
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Andreas Strasser , Wolfgang Raberg , Klemens Pruegl
CPC classification number: H01L43/08 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.
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公开(公告)号：US20150355295A1
公开(公告)日：2015-12-10
申请号：US14830195
申请日：2015-08-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
Abstract translation: 实施例涉及具有非常高的形状各向异性的xMR传感器。 实施例还涉及xMR堆叠的新结构化过程，以实现非常高的形状各向异性，而不会在性能相关的磁场敏感层系统中产生化学影响，同时在晶片上提供相对均匀的结构宽度，在实施例中可降低至约100nm。 实施例还可以提供具有性能相关自由层系统的侧壁的xMR堆叠，其平滑和/或限定的横向几何形状对于在晶片上实现均匀的磁性行为是重要的。
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公开(公告)号：US09959890B2
公开(公告)日：2018-05-01
申请号：US15400521
申请日：2017-01-06
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Andreas Strasser , Hermann Wendt , Klemens Pruegl
CPC classification number: G11B5/3903 , G01R33/09 , G11B5/3909 , G11B2005/3996
Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
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Patent Agency Ranking
公开(公告)号：US20170125044A1
公开(公告)日：2017-05-04
申请号：US15400521
申请日：2017-01-06
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Andreas Strasser , Hermann Wendt , Klemens Pruegl
IPC: G11B5/39
CPC classification number: G11B5/3903 , G01R33/09 , G11B5/3909 , G11B2005/3996
Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
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7.发明授权公开(公告)号：US09570099B2
公开(公告)日：2017-02-14
申请号：US14717213
申请日：2015-05-20
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Andreas Strasser , Hermann Wendt , Klemens Pruegl
CPC classification number: G11B5/3903 , G01R33/09 , G11B5/3909 , G11B2005/3996
Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
Abstract translation: 可以包括磁阻堆叠和设置在磁阻堆叠上的蚀刻停止层（ESL）的磁阻器件。 制造磁阻器件的方法可以包括：在衬底上沉积磁阻堆叠，ESL和掩模层; 执行第一蚀刻工艺以蚀刻掩模层的一部分以暴露ESL的一部分; 以及执行第二蚀刻工艺以蚀刻ESL的暴露部分和磁阻堆叠的一部分。 该方法还可以包括在第一蚀刻工艺之前在硬掩模上沉积光致抗蚀剂层，并且在第一蚀刻工艺之后从硬掩模中除去光致抗蚀剂层。 第一和第二蚀刻工艺可以不同。 例如，第一蚀刻工艺可以是反应性蚀刻工艺，第二蚀刻工艺可以是非反应性蚀刻工艺。
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8.发明申请公开(公告)号：US20160308120A1
公开(公告)日：2016-10-20
申请号：US14688177
申请日：2015-04-16
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Andreas Strasser , Wolfgang Raberg , Klemens Pruegl
CPC classification number: H01L43/08 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.
Abstract translation: 磁阻器件可以包括具有第一长度的第一磁性层结构，设置在第一磁性层结构上的阻挡层，设置在阻挡层上并具有小于第一长度的第二长度的第二磁性层结构。
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公开(公告)号：US10317480B2
公开(公告)日：2019-06-11
申请号：US14881226
申请日：2015-10-13
Applicant: Infineon Technologies AG
Inventor： Wolfgang Raberg , Andreas Strasser
Abstract: A magneto resistive device having a plurality of magneto resistive sensing elements. Each of the plurality of magneto resistive sensing elements has a free layer and a reference layer. The free layer has a rounded convex contour with an aspect ratio of 2 or greater. There may be one hundred or more magneto resistive sensing elements.
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公开(公告)号：US09606197B2
公开(公告)日：2017-03-28
申请号：US14830195
申请日：2015-08-19
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Klemens Pruegl , Olaf Kuehn , Andreas Strasser , Ralf-Rainer Schledz , Norbert Thyssen
CPC classification number: G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
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