Epitaxial metal oxide as buffer for epitaxial III-V layers

    公开(公告)号:US10923345B2

    公开(公告)日:2021-02-16

    申请号:US16088032

    申请日:2017-03-16

    申请人: IQE plc

    IPC分类号: H01L29/51 H01L29/20 H01L21/02

    摘要: Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.

    STRAIN-BALANCED SEMICONDUCTOR STRUCTURE
    5.
    发明申请

    公开(公告)号:US20190157834A1

    公开(公告)日:2019-05-23

    申请号:US16198391

    申请日:2018-11-21

    申请人: IQE plc

    摘要: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

    Integrated Epitaxial Metal Electrodes
    7.
    发明申请

    公开(公告)号:US20190074365A1

    公开(公告)日:2019-03-07

    申请号:US16178495

    申请日:2018-11-01

    申请人: IQE plc

    IPC分类号: H01L29/51 H01L21/02

    摘要: Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.