公开(公告)号：US20190028081A1

公开(公告)日：2019-01-24

申请号：US16126840

申请日：2018-09-10

申请人： IQE plc

发明人： Rodney Pelzel ,  Rytis Dargis ,  Andrew Clark ,  Howard Williams ,  Patrick Chin ,  Michael Lebby

IPC分类号： H03H1/00 ,  H01L41/319 ,  H01L27/06 ,  H01L29/66 ,  H03H9/17 ,  H03H3/08 ,  H03H3/02 ,  H01L23/66 ,  H01L41/083 ,  H01L41/08 ,  H01L29/778 ,  H01L29/737

CPC分类号： H03H1/0007 ,  H01L23/66 ,  H01L27/0688 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/778 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/319 ,  H01L2223/6672 ,  H03H3/02 ,  H03H3/08 ,  H03H9/175 ,  H03H2001/0064 ,  H03H2001/0085 ,  H03H2003/025

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：US20180138284A1

公开(公告)日：2018-05-17

申请号：US15712002

申请日：2017-09-21

申请人： IQE, plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

CPC分类号： H01L29/511 ,  H01L21/02123 ,  H01L21/02178 ,  H01L21/02293 ,  H01L21/02381 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02521 ,  H01L29/517

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

公开(公告)号：US10825912B2

公开(公告)日：2020-11-03

申请号：US16178495

申请日：2018-11-01

申请人： IQE plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L45/00 ,  H01L27/24 ,  H01L29/51 ,  H01L21/02

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

公开(公告)号：US20170141750A1

公开(公告)日：2017-05-18

申请号：US15342045

申请日：2016-11-02

申请人： IQE, PLC

发明人： Rodney Pelzel ,  Rytis Dargis ,  Andrew Clark ,  Howard Williams ,  Patrick Chin ,  Michael Lebby

IPC分类号： H03H1/00 ,  H01L27/06 ,  H01L29/737 ,  H01L29/66 ,  H01L23/66 ,  H01L29/778

CPC分类号： H03H1/0007 ,  H01L23/66 ,  H01L27/0688 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/778 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/319 ,  H01L2223/6672 ,  H03H3/02 ,  H03H3/08 ,  H03H9/175 ,  H03H2001/0064 ,  H03H2001/0085 ,  H03H2003/025

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：US10566944B2

公开(公告)日：2020-02-18

申请号：US16126840

申请日：2018-09-10

申请人： IQE plc

发明人： Rodney Pelzel ,  Rytis Dargis ,  Andrew Clark ,  Howard Williams ,  Patrick Chin ,  Michael Lebby

IPC分类号： H03H1/00 ,  H01L41/08 ,  H01L41/319 ,  H03H3/02 ,  H03H3/08 ,  H03H9/17 ,  H01L23/66 ,  H01L27/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/778 ,  H01L41/083

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：US20190074365A1

公开(公告)日：2019-03-07

申请号：US16178495

申请日：2018-11-01

申请人： IQE plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

公开(公告)号：US10075143B2

公开(公告)日：2018-09-11

申请号：US15342045

申请日：2016-11-02

申请人： IQE, PLC

发明人： Rodney Pelzel ,  Rytis Dargis ,  Andrew Clark ,  Howard Williams ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L27/06 ,  H03H1/00 ,  H01L21/00 ,  H01L29/737 ,  H01L23/66 ,  H01L29/66 ,  H01L29/778 ,  H01L41/08 ,  H01L41/083 ,  H01L41/319 ,  H03H3/02 ,  H03H3/08 ,  H03H9/17

CPC分类号： H03H1/0007 ,  H01L23/66 ,  H01L27/0688 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/778 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/319 ,  H01L2223/6672 ,  H03H3/02 ,  H03H3/08 ,  H03H9/175 ,  H03H2001/0064 ,  H03H2001/0085 ,  H03H2003/025

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：US20190172923A1

公开(公告)日：2019-06-06

申请号：US16257707

申请日：2019-01-25

申请人： IQE plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.

公开(公告)号：US10128350B2

公开(公告)日：2018-11-13

申请号：US15712002

申请日：2017-09-21

申请人： IQE, plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.