公开(公告)号：US20160226023A1

公开(公告)日：2016-08-04

申请号：US15099538

申请日：2016-04-14

Applicant: Industrial Technology Research Institute

Inventor： Tai-Hung Chen ,  Chun-Hao Chang ,  Li-Wen Lai ,  Kun-Wei Lin

IPC: H01L51/52 ,  H01L51/00 ,  C09D165/04

CPC classification number: H01L51/5253 ,  B32B7/12 ,  B32B17/1055 ,  C08K5/5419 ,  C09D165/04 ,  C09D183/04 ,  H01L51/0035 ,  H01L51/5237 ,  H01L2251/558 ,  Y10T428/265

Abstract: A laminate device is provided. The laminate device includes a substrate having a surface; a luminescent component over the surface of the substrate; a poly(p-xylylene) film over the surface of the substrate and covering the luminescent component; an interposer layer between the luminescent component and the substrate, wherein the interposer layer is bonded to both the substrate and the poly(p-xylylene) film in a covalent manner, wherein a ratio of Si—C bonds and Si—X bonds in the interposer layer is in a range from about 0.3 to about 0.8, wherein X is O or N; and a first barrier layer covering the poly(p-xylylene) film.

Abstract translation: 提供层压装置。 层压装置包括具有表面的基板; 在衬底的表面上的发光组分; 在所述衬底的表面上的聚（对二甲苯）膜，并覆盖所述发光组分; 在所述发光部件和所述基板之间的中介层，其中所述插入层以共价方式与所述基板和所述聚对苯二甲酰亚胺膜结合，其中所述中间层中的Si-C键和Si-X键的比例为 中间层在约0.3至约0.8的范围内，其中X为O或N; 和覆盖聚（对二甲苯）膜的第一阻挡层。

公开(公告)号：US08937394B2

公开(公告)日：2015-01-20

申请号：US13728544

申请日：2012-12-27

Applicant: Industrial Technology Research Institute

Inventor： Chun-Ting Chen ,  Li-Wen Lai ,  Kun-Wei Lin ,  Teng-Yen Wang

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L51/00 ,  H01L51/52

CPC classification number: H01L23/3135 ,  H01L21/56 ,  H01L23/3192 ,  H01L51/0097 ,  H01L51/5256 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/31663 ,  H01L2924/00

Abstract: An embodiment of the invention provides a compound barrier layer, including: a first barrier layer disposed on a substrate; and a second barrier layer disposed on the first barrier layer, wherein the first barrier layer and second barrier layer both include a plurality of alternately arranged inorganic material regions and organo-silicon material regions and the inorganic material regions and the organo-silicon material regions of the first barrier layer and second barrier layer are alternatively stacked vertically.

Abstract translation: 本发明的一个实施方案提供一种复合阻挡层，包括：设置在基底上的第一阻挡层; 以及设置在所述第一阻挡层上的第二阻挡层，其中所述第一阻挡层和所述第二阻挡层均包括多个交替布置的无机材料区域和有机硅材料区域，并且所述无机材料区域和所述有机硅材料区域 第一阻挡层和第二阻挡层交替地垂直堆叠。

公开(公告)号：US20250108458A1

公开(公告)日：2025-04-03

申请号：US18827875

申请日：2024-09-09

Applicant: Industrial Technology Research Institute

Inventor： Kun-Wei Lin ,  Tung-Ying Lin ,  Miao-Chang Wu

IPC: B23K26/38 ,  B23K26/082 ,  B23K26/70 ,  B23K37/04

Abstract: An ingot splitting method and an ingot splitting apparatus are provided. The ingot splitting method includes the following steps. A laser provided from a laser source is focused with a focusing lens group on a plane to be split of an ingot, and a focus point of the laser is used to scan the plane to be split. An opposing first side and second side of the ingot are fixed with a chuck table and an ultrasonic source. The plane to be split is located between the first side and the second side. A pulling force is applied to the second side in a direction away from the ingot with a tensioner, and ultrasonic waves are applied to vibrate the ingot with the ultrasonic source simultaneously, so that the ingot is divided into two parts from the plane to be split.

公开(公告)号：US20170162826A1

公开(公告)日：2017-06-08

申请号：US15269945

申请日：2016-09-19

Applicant: Industrial Technology Research Institute

Inventor： Tung-Ying Lin ,  Kun-Wei Lin

IPC: H01L51/52 ,  G02F1/1333 ,  G02F1/167 ,  C23C16/515 ,  H01J37/32

CPC classification number: H01L51/5256 ,  C23C16/401 ,  C23C16/515 ,  G02F1/1333 ,  G02F1/167 ,  G02F2001/133337 ,  H01J37/32146 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L2251/5346

Abstract: A composite barrier layer including at least one first barrier layer and at least one second barrier layer disposed in a stacking manner is provided. The Si—O—Si linear bond ratio is higher than the Si—O—Si network bond ratio in the first barrier layer. The Si—O—Si network bond ratio is higher than the Si—O—Si linear bond ratio in the second barrier layer.

公开(公告)号：US20140144382A1

公开(公告)日：2014-05-29

申请号：US13726658

申请日：2012-12-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ming-Hsien Ko ,  Li-Wen Lai ,  Kun-Wei Lin ,  Chun-Hao Chang ,  Tai-Hung Chen

IPC: C23C16/455

CPC classification number: C23C16/4401 ,  C23C16/45578 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449

Abstract: A plasma apparatus including a chamber, an electrode set and a gas supplying tube set is provided. The chamber has a supporting table. The gas supplying tube set is disposed in the chamber and located between the supporting table and the electrode set. The gas supplying tube set includes at least one outer gas supplying tube and at least one first inner gas supplying tube. The first inner gas supplying tube is telescoped within the outer gas supplying tube. The outer gas supplying tube and the first inner gas supplying tube both have a plurality of gas apertures, and an amount of the gas apertures of the outer gas supplying tube is greater than an amount of the gas apertures of the first inner gas supplying tube.

Abstract translation: 提供了包括室，电极组和供气管组的等离子体装置。 房间有一个支撑台。 气体供给管组设置在室内并且位于支撑台和电极组之间。 气体供给管组包括至少一个外部气体供给管和至少一个第一内部气体供给管。 第一内部气体供给管可伸缩在外部气体供给管内。 外部气体供给管和第一内部气体供给管都具有多个气体孔，外部气体供给管的气体孔的量大于第一内部气体供给管的气体孔的量。

公开(公告)号：US20140162054A1

公开(公告)日：2014-06-12

申请号：US14102402

申请日：2013-12-10

Applicant: Industrial Technology Research Institute

Inventor： Tai-Hung Chen ,  Chun-Hao Chang ,  Li-Wen Lai ,  Kun-Wei Lin

IPC: C09J183/04 ,  B32B17/10 ,  H01L51/52 ,  B32B7/12

CPC classification number: H01L51/5253 ,  B32B7/12 ,  B32B17/1055 ,  C08K5/5419 ,  C09D165/04 ,  C09D183/04 ,  H01L51/0035 ,  H01L51/5237 ,  H01L2251/558 ,  Y10T428/265

Abstract: An embodiment of the present disclosure provides a laminate structure, including a substrate having a surface; a poly(p-xylylene) film over the surface of the substrate; and an interposer layer between the substrate and the poly(p-xylylene) film. The interposer layer is bonded to both the substrate and the poly(p-xylylene) film in a covalent manner, and a ratio of Si—C bonds and Si—X bonds in the interposer layer is in a range from about 0.3 to about 0.8, wherein X is O or N.

Abstract translation: 本公开的实施例提供了一种层压结构，包括具有表面的基板; 在基底表面上的聚（对二甲苯）膜; 以及衬底和聚（对二甲苯）膜之间的插入层。 中间层以共价方式结合到基底和聚（对二甲苯基）膜上，并且中介层中的Si-C键和Si-X键的比例在约0.3至约0.8的范围内 其中X为O或N.