公开(公告)号：US20250048679A1

公开(公告)日：2025-02-06

申请号：US18763109

申请日：2024-07-03

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Jhe-Ciou JHU ,  Chung-Wen YEN ,  Nai-Fang HSU ,  Ai-Ling KUO

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/425 ,  H01L29/66

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a substrate, a buffer layer, an oxide semiconductor layer, and a gate electrode. The buffer layer is disposed on the substrate. The oxide semiconductor layer is disposed on the buffer layer and has a first part and a second part adjacent to the first part. The gate electrode is overlapped with the first part. A part of the buffer layer is overlapped with the second part of the oxide semiconductor layer, The part of the buffer layer has a first portion and a second portion disposed on the first portion. The concentration of boron in the first portion is greater than the concentration of boron in the second portion.

公开(公告)号：US20240258324A1

公开(公告)日：2024-08-01

申请号：US18632631

申请日：2024-04-11

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02164 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02595 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/518

Abstract: An electronic device is provided. The electronic device includes a substrate, a first active layer, a second active layer, a first gate electrode, a first insulator, a second gate electrode, a second insulator, a first electrode electrically connected to the second active layer, and a second electrode. The first active layer is different from the second active layer in material. The first insulator is disposed between the first active layer and the first gate electrode. The second insulator is disposed between the second active layer and the second gate electrode. The second gate electrode is disposed between the first electrode and the second active layer. The second electrode is overlapped with at least part of the second active layer. The second electrode and the first gate electrode are the same in material.

公开(公告)号：US20200013807A1

公开(公告)日：2020-01-09

申请号：US16571928

申请日：2019-09-16

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L29/24 ,  H01L21/02

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than said second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

公开(公告)号：US20170338252A1

公开(公告)日：2017-11-23

申请号：US15480458

申请日：2017-04-06

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/1362 ,  H01L27/32

CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/323 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: A display device is disclosed, which includes: a first substrate; a first thin film transistor disposed on the first substrate; a second thin film transistor disposed on the first substrate; a first capacitance electrode; and a second capacitance electrode. The first thin film transistor includes: a first semiconductor layer comprising silicon; and a first electrode electrically connected to the first semiconductor layer. The second thin film transistor includes: a second semiconductor layer comprising metal oxide; and a second electrode electrically connected to the second semiconductor layer. The first capacitance electrode is electrically connected to the first electrode, the second capacitance electrode is electrically connected to the second electrode, and the second capacitance electrode and the first capacitance electrode overlap.

公开(公告)号：US20170256620A1

公开(公告)日：2017-09-07

申请号：US15443411

申请日：2017-02-27

Applicant: Innolux Corporation

Inventor： Chun-Liang LIN ,  Bo-Chin TSUEI ,  Hung-Kun CHEN ,  Nai-Fang HSU ,  Yi-Ching CHEN

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/41733 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display panel comprises a first substrate, a second substrate, a display layer and transistors. One of the transistors includes a gate electrode disposed on the base plate, a first insulating layer disposed on the gate electrode, an active layer disposed on the first insulating layer, and a source electrode and a drain electrode disposed on the active layer, wherein the active layer includes a channel region between the source electrode and the drain electrode. At least one of the source and drain electrodes includes a first conductive layer disposed on the active layer, and a second conductive layer disposed on and contacting the first conductive layer, wherein the second conductive layer exposes a portion of top surface of the first conductive layer so that the first conductive layer possesses a first protrusion portion protruding from the edge of the second conductive layer and extending towards the channel region.

公开(公告)号：US20250155764A1

公开(公告)日：2025-05-15

申请号：US19018257

申请日：2025-01-13

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Kuan-Feng LEE ,  Nai-Fang HSU

IPC: G02F1/1368 ,  G02F1/1345 ,  G02F1/1362 ,  H10D30/67 ,  H10D86/40 ,  H10D86/60

Abstract: A substrate assembly includes: a substrate; a first transistor disposed on the substrate, wherein the first transistor includes a first semiconductor layer; and a second transistor disposed on the substrate, wherein the second transistor includes a second semiconductor layer and a drain electrode electrically connected to the second semiconductor layer, and a material of the first semiconductor layer is different from a material of the second semiconductor layer, wherein the first semiconductor layer of the first transistor is electrically insulated from the drain electrode of the second transistor.

公开(公告)号：US20240332310A1

公开(公告)日：2024-10-03

申请号：US18739591

申请日：2024-06-11

Applicant: InnoLux Corporation

Inventor： CHANDRA LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368 ,  G06F3/041 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H10K59/121 ,  H10K59/131 ,  H10K59/40

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134309 ,  G02F1/1368 ,  G06F3/0412 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/131 ,  H10K59/40 ,  G02F1/133388 ,  G02F1/13685 ,  H01L29/4908 ,  H01L29/78672 ,  H10K59/1213

Abstract: An electronic device, having a first region and a second region adjacent to the first region, includes: a first substrate; a silicon semiconductor disposed on the first substrate and in the first region; a first oxide semiconductor disposed on the first substrate and in the second region; a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor; and a second conductive component disposed between the first substrate and the first oxide semiconductor, wherein the second conductive component is at least partially overlapped with the first oxide semiconductor and electrically connected to the first conductive component.

公开(公告)号：US20180158843A1

公开(公告)日：2018-06-07

申请号：US15486336

申请日：2017-04-13

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13685 ,  G06F3/0412 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/323 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed over the first substrate, wherein the first transistor includes an oxide semiconductor layer; and a second transistor disposed over the first substrate, wherein the second transistor includes a silicon semiconductor layer, wherein the oxide semiconductor layer includes indium, gallium, and oxygen; and a ratio of an atomic percentage of oxygen to a sum of atomic percentages of indium and gallium in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.

公开(公告)号：US20170294456A1

公开(公告)日：2017-10-12

申请号：US15436073

申请日：2017-02-17

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L29/51 ,  H01L29/24 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.

公开(公告)号：US20250151407A1

公开(公告)日：2025-05-08

申请号：US19018018

申请日：2025-01-13

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Nai-Fang HSU

IPC: H10D86/60 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368 ,  G06F3/041 ,  H10D30/67 ,  H10D62/80 ,  H10D64/27 ,  H10D86/40 ,  H10K59/121 ,  H10K59/131 ,  H10K59/40

Abstract: An electronic device, having a first region and a second region adjacent to the first region, includes: a first substrate; a silicon semiconductor disposed on the first substrate and in the first region; a first oxide semiconductor disposed on the first substrate and in the second region; a first conductive component disposed between the first substrate and the first oxide semiconductor, wherein the first conductive component is at least partially overlapped with the first oxide semiconductor and electrically connected to the silicon semiconductor.