公开(公告)号：US09659613B1

公开(公告)日：2017-05-23

申请号：US15347571

申请日：2016-11-09

Applicant: Intel Corporation

Inventor： Feng Pan ,  Ramin Ghodsi

IPC: G11C7/22 ,  G11C7/10 ,  G11C16/28 ,  G11C16/32 ,  G11C16/10 ,  G11C7/06

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C7/065 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3454 ,  G11C16/3459 ,  G11C16/349 ,  G11C2211/5644

Abstract: A disclosed example accesses a binary value latched by a sense amplifier in circuit with a memory cell, the binary value latched by the sense amplifier in response to a counter reaching a trigger count value, the trigger count value selected from a plurality of different trigger count values based on a characteristic of the memory cell; determines a programmed state of the memory cell based on the binary value; and performs a memory operation based on the programmed state of the memory cell.

公开(公告)号：US09824767B1

公开(公告)日：2017-11-21

申请号：US15197124

申请日：2016-06-29

Applicant: Intel Corporation

Inventor： Davide Mantegazza ,  Feng Pan ,  Prashant S. Damle ,  Hanmant Pramod Belgal ,  Kiran Pangal

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  H01L27/24 ,  H01L45/00

CPC classification number: G11C16/3427 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C16/0433 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C2013/0052 ,  G11C2013/0057 ,  G11C2013/0092 ,  G11C2213/76 ,  H01L27/2481 ,  H01L45/06

Abstract: A disclosed example to reduce a threshold voltage drift of a selector device of a memory cell includes providing an applied voltage to the selector device of the memory cell, the applied voltage being less than a threshold voltage of the selector device, and reducing the threshold voltage drift of the memory cell by maintaining the applied voltage at the selector device for a thresholding duration to activate the selector device.

公开(公告)号：US09530513B1

公开(公告)日：2016-12-27

申请号：US14952322

申请日：2015-11-25

Applicant: Intel Corporation

Inventor： Feng Pan ,  Ramin Ghodsi

IPC: G11C7/22 ,  G11C16/32 ,  G11C16/28

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C7/065 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3454 ,  G11C16/3459 ,  G11C16/349 ,  G11C2211/5644

Abstract: A disclosed example sense programmed states of memory cells includes starting a counter at a time of activating a plurality of memory cells. Binary values are obtained based on sense amplifiers in circuit with the memory cells in response to the counter reaching a trigger count value. A programmed state of the memory cells is determined based on the binary values.

Abstract translation: 公开的示例性感测存储器单元的编程状态包括在激活多个存储器单元时启动计数器。 基于与存储器单元的电路中的读出放大器响应于计数器达到触发计数值而获得二进制值。 基于二进制值确定存储器单元的编程状态。

公开(公告)号：US20170221568A1

公开(公告)日：2017-08-03

申请号：US15491708

申请日：2017-04-19

Applicant: Intel Corporation

Inventor： Feng Pan ,  Ramin Ghodsi

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C7/065 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3454 ,  G11C16/3459 ,  G11C16/349 ,  G11C2211/5644

Abstract: A disclosed example determines programmed states of a plurality of memory cells based on a counter reaching a trigger count value, the trigger count value selected from a plurality of different trigger count values based on a characteristic of the memory cells; determines, based on the programmed states, first ones of the memory cells that do not satisfy a target threshold voltage; and performs the programming pass on the first ones of the memory cells.

公开(公告)号：US09928914B2

公开(公告)日：2018-03-27

申请号：US15491708

申请日：2017-04-19

Applicant: Intel Corporation

Inventor： Feng Pan ,  Ramin Ghodsi

IPC: G11C16/10 ,  G11C16/34 ,  G11C11/56 ,  G11C7/22

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C7/065 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3454 ,  G11C16/3459 ,  G11C16/349 ,  G11C2211/5644

Abstract: A disclosed example determines programmed states of a plurality of memory cells based on a counter reaching a trigger count value, the trigger count value selected from a plurality of different trigger count values based on a characteristic of the memory cells; determines, based on the programmed states, first ones of the memory cells that do not satisfy a target threshold voltage; and performs the programming pass on the first ones of the memory cells.

公开(公告)号：US20170148494A1

公开(公告)日：2017-05-25

申请号：US15347571

申请日：2016-11-09

Applicant: Intel Corporation

Inventor： Feng Pan ,  Ramin Ghodsi

IPC: G11C7/10 ,  G11C7/06 ,  G11C16/10 ,  G11C16/28 ,  G11C16/32

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C7/065 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3454 ,  G11C16/3459 ,  G11C16/349 ,  G11C2211/5644

Abstract: A disclosed example accesses a binary value latched by a sense amplifier in circuit with a memory cell, the binary value latched by the sense amplifier in response to a counter reaching a trigger count value, the trigger count value selected from a plurality of different trigger count values based on a characteristic of the memory cell; determines a programmed state of the memory cell based on the binary value; and performs a memory operation based on the programmed state of the memory cell.