公开(公告)号：US20140191262A1

公开(公告)日：2014-07-10

申请号：US13738684

申请日：2013-01-10

Applicant: INTERMOLECULAR INC.

Inventor： Philip Kraus ,  Thai Cheng Chua ,  Yoga Saripalli

IPC: H01L31/0232 ,  H01L33/60

CPC classification number: H01L33/60 ,  H01L31/00 ,  H01L31/02165 ,  H01L31/022466 ,  H01L33/44 ,  H01S5/00 ,  H01S5/18361 ,  Y10S438/952

Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Abstract translation: 描述了包括包含AlN和AlSb的合金的部件的装置。 该组件具有与光电子器件中的半导体基本上相同的折射率，并且在光电子器件中使用的光的波长处具有高透明度。 该元件与光电子器件中的半导体接触。 该合金包含0重量％至100重量％的AlN和按重量计在0％和100％之间的AlSb。 半导体可以是诸如GaAs或AlGaInP的III-V半导体。 该组件可用作透明绝缘体。 该合金也可以被掺杂以形成p型导体或n型导体，并且该组件可以用作透明导体。 还公开了制造方法和利用该合金的装置。

公开(公告)号：US08900897B2

公开(公告)日：2014-12-02

申请号：US13738684

申请日：2013-01-10

Applicant: Intermolecular Inc.

Inventor： Philip Kraus ,  Thai Cheng Chua ,  Yoga Saripalli

IPC: H01L21/00 ,  H01L33/00 ,  G02B1/10 ,  G02F1/15 ,  H01L33/60 ,  H01L31/00 ,  H01L33/44 ,  H01S5/00

CPC classification number: H01L33/60 ,  H01L31/00 ,  H01L31/02165 ,  H01L31/022466 ,  H01L33/44 ,  H01S5/00 ,  H01S5/18361 ,  Y10S438/952

Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Abstract translation: 描述了包括包含AlN和AlSb的合金的部件的装置。 该组件具有与光电子器件中的半导体基本上相同的折射率，并且在光电子器件中使用的光的波长处具有高透明度。 该元件与光电子器件中的半导体接触。 该合金包含0重量％至100重量％的AlN和按重量计在0％和100％之间的AlSb。 半导体可以是诸如GaAs或AlGaInP的III-V半导体。 该组件可用作透明绝缘体。 该合金也可以被掺杂以形成p型导体或n型导体，并且该组件可以用作透明导体。 还公开了制造方法和利用该合金的装置。

公开(公告)号：US20130313566A1

公开(公告)日：2013-11-28

申请号：US13957380

申请日：2013-08-01

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan ,  Yoga Saripalli

IPC: H01L21/02

CPC classification number: H01L21/02436 ,  B01J2219/0059 ,  B01J2219/00756 ,  C23C16/303 ,  C23C16/45534 ,  C23C16/45551 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract translation: 描述了使用表面活性剂沉积薄膜的方法和装置。 方法和装置包括沉积过程和系统，其包括多个分离的处理区域，其能够快速重复薄膜的亚单层沉积。 表面活性剂的使用允许在较低温度下沉积具有低表面粗糙度值的高质量外延膜。 使用诸如GaN的III-V族薄膜的沉积作为示例。