公开(公告)号：US09081245B2

公开(公告)日：2015-07-14

申请号：US14102768

申请日：2013-12-11

Applicant: Intermolecular, Inc.

Inventor： Minh Huu Le ,  Thai Cheng Chua ,  Guowen Ding ,  Minh Anh Nguyen ,  Yu Wang ,  Guizhen Zhang

IPC: G02F1/153 ,  G02F1/155

CPC classification number: G02F1/155

Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.

Abstract translation: 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。

公开(公告)号：US20140191262A1

公开(公告)日：2014-07-10

申请号：US13738684

申请日：2013-01-10

Applicant: INTERMOLECULAR INC.

Inventor： Philip Kraus ,  Thai Cheng Chua ,  Yoga Saripalli

IPC: H01L31/0232 ,  H01L33/60

CPC classification number: H01L33/60 ,  H01L31/00 ,  H01L31/02165 ,  H01L31/022466 ,  H01L33/44 ,  H01S5/00 ,  H01S5/18361 ,  Y10S438/952

Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Abstract translation: 描述了包括包含AlN和AlSb的合金的部件的装置。 该组件具有与光电子器件中的半导体基本上相同的折射率，并且在光电子器件中使用的光的波长处具有高透明度。 该元件与光电子器件中的半导体接触。 该合金包含0重量％至100重量％的AlN和按重量计在0％和100％之间的AlSb。 半导体可以是诸如GaAs或AlGaInP的III-V半导体。 该组件可用作透明绝缘体。 该合金也可以被掺杂以形成p型导体或n型导体，并且该组件可以用作透明导体。 还公开了制造方法和利用该合金的装置。

公开(公告)号：US08900897B2

公开(公告)日：2014-12-02

申请号：US13738684

申请日：2013-01-10

Applicant: Intermolecular Inc.

Inventor： Philip Kraus ,  Thai Cheng Chua ,  Yoga Saripalli

IPC: H01L21/00 ,  H01L33/00 ,  G02B1/10 ,  G02F1/15 ,  H01L33/60 ,  H01L31/00 ,  H01L33/44 ,  H01S5/00

CPC classification number: H01L33/60 ,  H01L31/00 ,  H01L31/02165 ,  H01L31/022466 ,  H01L33/44 ,  H01S5/00 ,  H01S5/18361 ,  Y10S438/952

Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Abstract translation: 描述了包括包含AlN和AlSb的合金的部件的装置。 该组件具有与光电子器件中的半导体基本上相同的折射率，并且在光电子器件中使用的光的波长处具有高透明度。 该元件与光电子器件中的半导体接触。 该合金包含0重量％至100重量％的AlN和按重量计在0％和100％之间的AlSb。 半导体可以是诸如GaAs或AlGaInP的III-V半导体。 该组件可用作透明绝缘体。 该合金也可以被掺杂以形成p型导体或n型导体，并且该组件可以用作透明导体。 还公开了制造方法和利用该合金的装置。

公开(公告)号：US20140127887A1

公开(公告)日：2014-05-08

申请号：US13837994

申请日：2013-03-15

Applicant: INTERMOLECULAR, INC.

Inventor： Philip Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  C23C16/0227 ,  C23C16/303 ,  C23C16/305 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

Abstract translation: 公开了用于在衬底上形成层的化学气相沉积（CVD）系统。 该系统的实施例包括至少两个可以在集群工具中链接的处理室。 第一处理室提供具有受控的环境温度和压力的室，并且包含用于在衬底上进行CVD的第一环境和用于使衬底与等离子体接触的第二环境; 能够在每个环境中定位用于顺序处理的基板的基板输送系统，以及能够保持隔离的气体控制系统。 第二处理室提供CVD系统。 在衬底上形成层的方法包括在每个处理室中形成一个或多个层。 该系统和方法适用于制备III-V族，II-VI族或IV族薄膜器件。

公开(公告)号：US20140124788A1

公开(公告)日：2014-05-08

申请号：US13670269

申请日：2012-11-06

Applicant: INTERMOLECULAR, INC.

Inventor： Philip Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/205 ,  H01L29/205 ,  H01L33/32

CPC classification number: H01L21/0254 ,  C23C16/0227 ,  C23C16/303 ,  C23C16/305 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

公开(公告)号：US20140092462A1

公开(公告)日：2014-04-03

申请号：US14102768

申请日：2013-12-11

Applicant: Intermolecular, Inc.

Inventor： Minh Huu Le ,  Thai Cheng Chua ,  Guowen Ding ,  Minh Anh Nguyen ,  Yu Wang ,  Guizhen Zhang

IPC: G02F1/155

CPC classification number: G02F1/155

Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.

Abstract translation: 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。

公开(公告)号：US20130313566A1

公开(公告)日：2013-11-28

申请号：US13957380

申请日：2013-08-01

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan ,  Yoga Saripalli

IPC: H01L21/02

CPC classification number: H01L21/02436 ,  B01J2219/0059 ,  B01J2219/00756 ,  C23C16/303 ,  C23C16/45534 ,  C23C16/45551 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract translation: 描述了使用表面活性剂沉积薄膜的方法和装置。 方法和装置包括沉积过程和系统，其包括多个分离的处理区域，其能够快速重复薄膜的亚单层沉积。 表面活性剂的使用允许在较低温度下沉积具有低表面粗糙度值的高质量外延膜。 使用诸如GaN的III-V族薄膜的沉积作为示例。

公开(公告)号：US20130118404A1

公开(公告)日：2013-05-16

申请号：US13714814

申请日：2012-12-14

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/205

CPC classification number: H01L21/2056 ,  C23C16/303 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45551 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/1016

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract translation: 描述了沉积薄膜的方法和装置。 在实施例中，提供了用于外延薄膜形成的系统和方法，包括用于形成二元化合物外延薄膜的系统和方法。 可以使用本发明实施例的方法和系统来形成直接带隙半导体二元化合物外延薄膜，例如GaN，InN和AlN，以及这些化合物的混合合金，例如（In，Ga）N ，（Al，Ga）N，（In，Ga，Al）N。 方法和装置包括能够快速重复薄膜的亚单层沉积的多级沉积工艺和系统。