公开(公告)号：US20140127887A1

公开(公告)日：2014-05-08

申请号：US13837994

申请日：2013-03-15

Applicant: INTERMOLECULAR, INC.

Inventor： Philip Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  C23C16/0227 ,  C23C16/303 ,  C23C16/305 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

Abstract translation: 公开了用于在衬底上形成层的化学气相沉积（CVD）系统。 该系统的实施例包括至少两个可以在集群工具中链接的处理室。 第一处理室提供具有受控的环境温度和压力的室，并且包含用于在衬底上进行CVD的第一环境和用于使衬底与等离子体接触的第二环境; 能够在每个环境中定位用于顺序处理的基板的基板输送系统，以及能够保持隔离的气体控制系统。 第二处理室提供CVD系统。 在衬底上形成层的方法包括在每个处理室中形成一个或多个层。 该系统和方法适用于制备III-V族，II-VI族或IV族薄膜器件。

公开(公告)号：US20140124788A1

公开(公告)日：2014-05-08

申请号：US13670269

申请日：2012-11-06

Applicant: INTERMOLECULAR, INC.

Inventor： Philip Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/205 ,  H01L29/205 ,  H01L33/32

CPC classification number: H01L21/0254 ,  C23C16/0227 ,  C23C16/303 ,  C23C16/305 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

公开(公告)号：US20140299056A1

公开(公告)日：2014-10-09

申请号：US14308846

申请日：2014-06-19

Applicant: Intermolecular Inc.

Inventor： Philip Kraus ,  Boris Borisov ,  Dipankar Pramanik

IPC: C23C16/455 ,  C23C16/42 ,  C23C16/48

CPC classification number: C23C16/45551 ,  C23C16/42 ,  C23C16/4554 ,  C23C16/483 ,  C30B25/12 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02532 ,  H01L21/0262

Abstract: Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition.

Abstract translation: 外延膜通过交替地暴露于前体给料区域，惰性气体等离子体区域，含氢等离子体区域，含氯等离子体和计量区域或原子氢源所在的区域而生长。 或者，激光照射技术可以替代一些处理区域中的等离子体能量。 膜生长过程可以在约25℃至约600℃之间的衬底温度下进行，以及可选地暴露于激光照射以使膜的表面熔化或经历近熔融状态。

公开(公告)号：US20130313566A1

公开(公告)日：2013-11-28

申请号：US13957380

申请日：2013-08-01

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan ,  Yoga Saripalli

IPC: H01L21/02

CPC classification number: H01L21/02436 ,  B01J2219/0059 ,  B01J2219/00756 ,  C23C16/303 ,  C23C16/45534 ,  C23C16/45551 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract translation: 描述了使用表面活性剂沉积薄膜的方法和装置。 方法和装置包括沉积过程和系统，其包括多个分离的处理区域，其能够快速重复薄膜的亚单层沉积。 表面活性剂的使用允许在较低温度下沉积具有低表面粗糙度值的高质量外延膜。 使用诸如GaN的III-V族薄膜的沉积作为示例。