公开(公告)号：US5626288A

公开(公告)日：1997-05-06

申请号：US466352

申请日：1995-06-06

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: F24F11/00 ,  G05D23/19 ,  F24F7/013

CPC classification number: G05D23/1931 ,  F24F11/0001 ,  F24F11/0009 ,  F24F11/0012 ,  F24F11/0015 ,  F24F11/0017 ,  F24F2011/0013 ,  F24F2221/48 ,  Y02B30/78

Abstract: A method and apparatus for ventilating an enclosed air space, such as the crawl space under a building, and which includes a controller which is switchable between a cooling mode which activates a ventilating fan upon the temperature in the space reaching a predetermined upper limit and the differential of the temperatures inside and outside of the space reaching a predetermined value, and a heating mode which activates the ventilating fan upon the temperature in the space reaching a predetermined lower limit and the differential of the temperatures inside and outside of the space reaching a predetermined value. The ventilating fan may also be activated by the presence of predetermined concentrations of dangerous or destructive gases, such as radon and water vapor.

Abstract translation: 一种用于对封闭空气空间进行通风的方法和装置，例如建筑物下方的爬行空间，并且包括控制器，该控制器可在根据达到预定上限的空间中的温度启动通风扇的冷却模式和 空间的内部和外部的温度差达到预定值;以及加热模式，其在空间中的温度达到预定下限时启动通风扇，并且空间的内部和外部的温差达到预定的 值。 通风扇也可以通过存在预定浓度的危险或破坏性气体（例如氡气和水蒸汽）来激活。

公开(公告)号：US20130341621A1

公开(公告)日：2013-12-26

申请号：US13531284

申请日：2012-06-22

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: H01L29/868 ,  H01L21/20 ,  H01L21/329 ,  H01L29/04 ,  H01L29/73

CPC classification number: H01L29/6609 ,  H01L27/0255 ,  H01L29/868

Abstract: An electrical device includes a first layer, a second layer and an intrinsic layer. The first layer is of a first conductivity type, wherein the second layer is of a second conductivity type opposite to the first conductivity type. The intrinsic layer is arranged between the first and the second layer and has a reduced thickness at at least one portion. An area of the at least one portion is less than 50% of an active area in which the first and second layer face each other.

Abstract translation: 电气装置包括第一层，第二层和本征层。 第一层是第一导电类型，其中第二层是与第一导电类型相反的第二导电类型。 本征层布置在第一层和第二层之间，并且在至少一部分具有减小的厚度。 所述至少一部分的区域小于所述第一层和所述第二层彼此面对的有效区域的50％。

公开(公告)号：US07622790B2

公开(公告)日：2009-11-24

申请号：US11127765

申请日：2005-05-11

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: H01L27/102

CPC classification number: H01L29/7322 ,  H01L29/0692

Abstract: A transistor assembly having a transistor includes a plurality of transistor regions, each of which has a vertical transistor structure having a collector semiconductor region, a base semiconductor region and an emitter semiconductor region, emitter contacting regions arranged above the transistor regions and base contacting regions connected to the base semiconductor regions via a polycrystalline semiconductor layer, wherein the polycrystalline semiconductor layer is structured such that the base contacting regions of transistor regions which are not part of the transistor are electrically isolated from base contacting regions of transistor regions which are part of the transistor.

Abstract translation: 具有晶体管的晶体管组件包括多个晶体管区域，每个晶体管区域具有具有集电极半导体区域的垂直晶体管结构，基极半导体区域和发射极半导体区域，配置在晶体管区域上方的发射极接触区域和连接的基极接触区域 通过多晶半导体层到基底半导体区域，其中多晶半导体层被构造成使得不是晶体管的一部分的晶体管区域的基极接触区域与作为晶体管的一部分的晶体管区域的基极接触区域电隔离 。

公开(公告)号：US07176128B2

公开(公告)日：2007-02-13

申请号：US10755844

申请日：2004-01-12

Applicant: Carsten Ahrens ,  Jakob Huber ,  Uwe Seidel

Inventor： Carsten Ahrens ,  Jakob Huber ,  Uwe Seidel

IPC: H01L21/4763

CPC classification number: H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2924/3011

Abstract: A method for producing a contact structure on a structured surface comprising producing a first conductive layer on the structured surface, wherein the first conductive layer comprising tungsten. A conductive seed layer is produced on the first conductive layer, the contact structure being produced by electroplating on the seed layer. The first conductive layer serves as an etch stop for selectively removing substrate material from the backside.

Abstract translation: 一种用于在结构化表面上制造接触结构的方法，包括在所述结构化表面上产生第一导电层，其中所述第一导电层包含钨。 在第一导电层上产生导电种子层，接触结构通过在种子层上电镀来制造。 第一导电层用作用于从背面选择性地去除衬底材料的蚀刻停止件。

公开(公告)号：US06806555B2

公开(公告)日：2004-10-19

申请号：US10144213

申请日：2002-05-13

Applicant: Jakob Huber ,  Wolfgang Klein

Inventor： Jakob Huber ,  Wolfgang Klein

IPC: H01L27082

CPC classification number: H01L29/0821 ,  H01L21/8224 ,  H01L27/0825

Abstract: A semiconductor component and a method for fabricating it includes a substrate and an epitaxial layer situated thereon and integrating at least a first and a second bipolar component in the layer. The first and second bipolar components have a buried layer and different collector widths. The buried layer of the second component has a larger layer thickness than that of the first component; exactly one epitaxial layer is provided. The different collector widths produced as a result thereof are influenced by the outdiffusion of the dopant of the buried layers by other substances.

Abstract translation: 半导体部件及其制造方法包括基板和位于其上的外延层，并且在该层中至少集成第一和第二双极部件。 第一和第二双极组件具有掩埋层和不同的集电极宽度。 第二部件的掩埋层的厚度大于第一部件的厚度; 正好提供一个外延层。 作为其结果产生的不同的集电极宽度受到其它物质对掩埋层的掺杂剂的扩散的影响。

公开(公告)号：US5047355A

公开(公告)日：1991-09-10

申请号：US406826

申请日：1989-09-12

Applicant: Jakob Huber ,  Ewald Pettenpaul

Inventor： Jakob Huber ,  Ewald Pettenpaul

IPC: H01L29/866 ,  H01L21/338 ,  H01L27/06 ,  H01L29/812 ,  H01L29/861 ,  H01L29/868

CPC classification number: H01L29/868 ,  Y10S438/979

Abstract: A semiconductor diode has three adjacent regions. The doped regions are doped in the same manner and are separated from one another by a third, intrinsic region. The intrinsic region is dimensioned such that upon application of a specific external voltage at the operating temperature of the diode, it is possible for charge carriers to tunnel from one doped region to the other doped region through the intrinsic region. The semiconductor diode has a planar structure on a semiconductor substrate. A semconductor diode of this kind is suitable for use as a protective diode for other components, particularly when they are mounted on substrates consisting fo connecting semiconductors.

Abstract translation: 半导体二极管具有三个相邻区域。 掺杂区域以相同的方式掺杂并且彼此分离第三本征区域。 本征区域的尺寸使得当在二极管的工作温度下施加特定的外部电压时，电荷载体可以通过本征区域从一个掺杂区域隧穿到另一个掺杂区域。 半导体二极管在半导体衬底上具有平面结构。 这种半导体二极管适合用作其他部件的保护二极管，特别是当它们安装在连接半导体的基板上时。

公开(公告)号：US4651522A

公开(公告)日：1987-03-24

申请号：US837369

申请日：1986-03-07

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: F01D25/32 ,  F02C3/14 ,  F02C3/26 ,  F02K3/105

CPC classification number: F02K3/105 ,  F01D25/32 ,  F02C3/14 ,  F02C3/26

Abstract: In order to be able to run a gas turbine engine with pulverized coal as fuel on an industrial basis an arrangement is provided for utilizing the energy contained in the bypass flow with the help of which the solid combustion particles in the combustible gas are removed prior to its entry to the gas turbine blading. If the engine is used for an aircraft this arrangement consists of a thrust nozzle impinged upon by the bypass flow which augments the action of the main thrust nozzle. For use in a stationary power plant this arrangement consists of a heat exchanger in which the heat of the bypass flow is utilized. Thus no unused energy gets lost by way of the bypass flow, so that the heat exchanger need not be kept extremely small for economic reasons. The result is a well cleaned combustible gas and the blades of the gas turbine are to a large extent protected from erosion caused by combustible residues.

Abstract translation: 为了能够以工业基础的方式运行具有粉煤作为燃料的燃气涡轮发动机，提供了用于利用旁路流中所含的能量的装置，借助于这些能量，在可燃气体中除去固体燃烧颗粒之前， 其进入燃气轮机叶片。 如果发动机用于飞行器，则该布置包括由旁路流动的推力喷嘴，该推力喷嘴增加主推力喷嘴的作用。 为了在固定式发电厂中使用，该装置由热交换器组成，其中利用旁路流的热量。 因此，通过旁路流动不会损耗未使用的能量，所以由于经济原因，热交换器不需要保持极小。 结果是清洁良好的可燃气体，燃气轮机的叶片在很大程度上受到可燃残留物的侵蚀。

公开(公告)号：US09379257B2

公开(公告)日：2016-06-28

申请号：US13531284

申请日：2012-06-22

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: H01L29/66 ,  H01L29/868 ,  H01L27/02

CPC classification number: H01L29/6609 ,  H01L27/0255 ,  H01L29/868

Abstract: An electrical device includes a first layer, a second layer and an intrinsic layer. The first layer is of a first conductivity type, wherein the second layer is of a second conductivity type opposite to the first conductivity type. The intrinsic layer is arranged between the first and the second layer and has a reduced thickness at at least one portion. An area of the at least one portion is less than 50% of an active area in which the first and second layer face each other.

Abstract translation: 电气装置包括第一层，第二层和本征层。 第一层是第一导电类型，其中第二层是与第一导电类型相反的第二导电类型。 本征层布置在第一层和第二层之间，并且在至少一部分具有减小的厚度。 所述至少一部分的区域小于所述第一层和所述第二层彼此面对的有效区域的50％。

公开(公告)号：US20100073978A1

公开(公告)日：2010-03-25

申请号：US12238179

申请日：2008-09-25

Applicant: Josef Paul Schaffer ,  Jakob Huber ,  Hermann Seitz

Inventor： Josef Paul Schaffer ,  Jakob Huber ,  Hermann Seitz

IPC: H02M7/219

CPC classification number: H02M7/219

Abstract: A bridge rectifier circuit including a first and second pair of bipolar transistors, wherein the bipolar transistors of each pair have conductivity types that are opposite from one another; first and second input terminals coupled to each of the bipolar transistors; and first and second output terminals coupled to each of the bipolar transistors. Furthermore, each of the bipolar transistors is configured to operate in reverse-active mode.

Abstract translation: 一种桥式整流电路，包括第一和第二对双极晶体管，其中每对双极晶体管具有彼此相反的导电类型; 耦合到每个双极晶体管的第一和第二输入端子; 以及耦合到每个双极晶体管的第一和第二输出端。 此外，每个双极晶体管被配置为以反向激活模式操作。

公开(公告)号：US06888226B2

公开(公告)日：2005-05-03

申请号：US10479267

申请日：2002-05-24

Applicant: Klaus Diefenbeck ,  Christian Herzum ,  Jakob Huber ,  Karlheinz Müller

Inventor： Klaus Diefenbeck ,  Christian Herzum ,  Jakob Huber ,  Karlheinz Müller

IPC: H01L29/08 ,  H01L29/36 ,  H01L29/861 ,  H01L29/167 ,  H01L21/331

CPC classification number: H01L29/861 ,  H01L29/0821 ,  H01L29/36

Abstract: A semiconductor structure includes a base layer of a first conductivity type, a first layer of the first conductivity type arranged on the base layer and having a dopant concentration that is lower than a dopant concentration of the base layer, and a second layer of a second conductivity type being operative with the first layer in order to form a transition between the first conductivity type and the second conductivity type. A course of a dopant profile at the transition between the base layer and the first layer is set such that in an ESD case a space charge region shifted to the transition between the base layer and the first layer reaches into the base layer.

Abstract translation: 半导体结构包括第一导电类型的基底层，布置在基底层上并且具有低于基底层的掺杂剂浓度的掺杂剂浓度的第一导电类型的第一层和第二导电类型的第二层 导电类型与第一层一起工作，以形成第一导电类型和第二导电类型之间的转变。 在基底层和第一层之间的过渡处的掺杂剂分布的过程被设置为使得在ESD情况下移动到基底层和第一层之间的转变的空间电荷区域到达基底层。