公开(公告)号：US09981970B2

公开(公告)日：2018-05-29

申请号：US14908180

申请日：2014-07-28

申请人： Jian Liu ,  Pengcheng Patrick Shao ,  Arto K. Krikorian ,  Petr Vachal

发明人： Jian Liu ,  Pengcheng Patrick Shao ,  Arto K. Krikorian ,  Petr Vachal

IPC分类号： C07D487/04 ,  A61K45/06 ,  A61K31/519 ,  A61K31/714 ,  A61K31/4439 ,  C07D513/04 ,  A61K31/4188

CPC分类号： C07D487/04 ,  A61K31/4188 ,  A61K31/4439 ,  A61K31/519 ,  A61K31/714 ,  A61K45/06 ,  C07D513/04 ,  A61K2300/00

摘要： Compounds having the structure of Formula I, including pharmaceutically acceptable salts of the compounds, wherein X is —C(═O) or —S(O)2—, are CETP inhibitors and are useful for raising HDL-cholesterol, reducing LDL-cholesterol, and for treating or preventing atherosclerosis.

公开(公告)号：US20130109649A1

公开(公告)日：2013-05-02

申请号：US13660010

申请日：2012-10-25

申请人： Pengcheng Patrick Shao ,  Wanying Sun ,  Revathi Reddy Katipally ,  Petr Vachal ,  Feng Ye ,  Jian Liu ,  Deyou Sha

发明人： Pengcheng Patrick Shao ,  Wanying Sun ,  Revathi Reddy Katipally ,  Petr Vachal ,  Feng Ye ,  Jian Liu ,  Deyou Sha

IPC分类号： A61K31/424 ,  A61K31/4439 ,  A61K31/506 ,  A61K31/454 ,  A61K31/5355 ,  A61K31/519 ,  A61P9/10 ,  A61P3/06 ,  A61K31/437 ,  A61K31/444 ,  A61K31/455 ,  A61K31/714 ,  C07D498/04 ,  A61K31/4245

CPC分类号： C07D498/04 ,  A61K31/424 ,  A61K31/437 ,  A61K31/4439 ,  A61K31/444 ,  A61K31/506 ,  A61K45/06

摘要： Compounds having the structure of Formula I, including pharmaceutically acceptable salts of the compounds, are CETP inhibitors and are useful for raising HDL-cholesterol, reducing LDL-cholesterol, and for treating or preventing atherosclerosis.

摘要翻译： 具有式I结构的化合物，包括化合物的药学上可接受的盐，是CETP抑制剂，可用于培养HDL-胆固醇，降低LDL-胆固醇，以及用于治疗或预防动脉粥样硬化。

公开(公告)号：USD1019826S1

公开(公告)日：2024-03-26

申请号：US29916182

申请日：2023-11-08

申请人： Jian Liu

设计人： Jian Liu

摘要： FIG. 1 is a front, top perspective view of a glider exercise device, showing my new design;
FIG. 2 is a rear, bottom perspective view thereof;
FIG. 3 is a front elevation view thereof;
FIG. 4 is a rear elevation view thereof;
FIG. 5 is a left side elevation view thereof;
FIG. 6 is a right side elevation view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.

公开(公告)号：US20230046316A1

公开(公告)日：2023-02-16

申请号：US17885130

申请日：2022-08-10

申请人： Jian Liu ,  Lakshmi Ravi ,  Dong Dong ,  Rolando Burgos ,  Steven Schmalz

发明人： Jian Liu ,  Lakshmi Ravi ,  Dong Dong ,  Rolando Burgos ,  Steven Schmalz

IPC分类号： H01H9/54 ,  H01H33/59

摘要： Gate control of power semiconductor devices using reduced gate drivers is disclosed. A circuit breaker may include a multitude of transistors, such as insulated gate bipolar transistors (IGBTs), connected in series with one another. Each transistor may be connected to a respective gate resistor. Diodes may be connected between various gate resistors. One or more resistor-capacitor (RC) snubber circuits may be provided in parallel with one or more of the transistors. Likewise, one or more metal-oxide varistors (MOVs) may be connected in parallel to one or more of the transistors. A gate driver (e.g., a single gate drive) may be connected to the one or more diodes and an emitter of at least one of transistors.

公开(公告)号：US11465240B2

公开(公告)日：2022-10-11

申请号：US16378485

申请日：2019-04-08

申请人： Jian Liu

发明人： Jian Liu

IPC分类号： B23K26/34 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  G01N21/19 ,  G01N21/71 ,  G01N21/88 ,  G01N21/17 ,  G01B11/30 ,  B22F10/20 ,  B22F10/36 ,  B22F10/28 ,  B22F10/30 ,  B22F10/50 ,  B22F12/90 ,  B29C64/393 ,  B23K26/354 ,  G01J5/00 ,  G01J5/80

摘要： Methods and apparatuses for manufacturing are disclosed, including (a) providing an apparatus having: a laser; scanner; powder injection system; powder spreading system; dichroic filter; imager-and-processor; and computer; (b) programming the computer with specifications of a sample; (c) using the computer to set initial parameters based on the sample specifications; (d) adjusting a stage to position the sample; (e) focusing and scanning electromagnetic radiation onto the sample while powder is concurrently injected onto the sample in order to deposit a layer; (f) capturing two-dimensional images of the sample and probing the sample to determine whether the deposited layer was manufactured per the specifications; (g) use the computer to adjust the three-dimensional manufacturing parameters based on the determination made in step (f) prior to additively manufacturing a subsequent layer or making repairs; and (h) repeating steps (d), (e), (f), and (g) until the manufacture is complete. Other embodiments are described and claimed.

公开(公告)号：US09748383B2

公开(公告)日：2017-08-29

申请号：US12867257

申请日：2009-02-12

申请人： Elizabeth Ching Tee Kho ,  Zheng Chao Liu ,  Deb Kumar Pal ,  Michael Mee Gouh Tiong ,  Jian Liu ,  Kia Yaw Kee

发明人： Yong Hai Hu ,  Elizabeth Ching Tee Kho ,  Zheng Chao Liu ,  Deb Kumar Pal ,  Michael Mee Gouh Tiong ,  Jian Liu ,  Kia Yaw Kee ,  William Lau

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/7834 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/7835

摘要： A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent.

公开(公告)号：US20170138695A1

公开(公告)日：2017-05-18

申请号：US15421263

申请日：2017-01-31

申请人： Jian Liu

发明人： Jian Liu

IPC分类号： F41C33/06 ,  A45C13/10 ,  A45C13/02

CPC分类号： F41C33/06 ,  A45C3/00 ,  A45C13/02 ,  A45C13/103 ,  F41C33/0209

摘要： A system and method for a secure weapon concealment compartment situated in a personal carrying item such as a purse, handbag, briefcase, backpack or luggage that allows a person to safely and efficiently carry, store and make available for use a weapon. The concealment compartment includes weapon securing having tapered holders or orifices formed to receive a weapon and provide safety against unintentional discharge of the weapon and resistive forces applied to a protective carrier of the weapon once stored to enable quick and effective withdrawal of the weapon from the concealment compartment.

公开(公告)号：US09469851B2

公开(公告)日：2016-10-18

申请号：US14234413

申请日：2012-07-24

申请人： Scott Quenton Harper ,  Jian Liu ,  Sara Garwick Coppens ,  Lindsay Wallace

发明人： Scott Quenton Harper ,  Jian Liu ,  Sara Garwick Coppens ,  Lindsay Wallace

IPC分类号： C12N15/86 ,  C12N15/09 ,  C12N15/63 ,  C12N15/11 ,  C12N15/113

CPC分类号： C12N15/86 ,  C12N15/113 ,  C12N2310/11 ,  C12N2310/141 ,  C12N2320/30 ,  C12N2330/51 ,  C12N2750/00032 ,  C12N2750/14132 ,  C12N2750/14143

摘要： The present invention relates to RNA interference-based methods for inhibiting the expression of the DUX4 gene, a double homeobox gene on human chromosome 4q35. Recombinant adeno-associated viruses of the invention deliver DNAs encoding microRNAs that knock down the expression of DUX4. The methods have application in the treatment of muscular dystrophies such as facioscapulohumeral muscular dystrophy.

摘要翻译： 本发明涉及用于抑制DUX4基因（人染色体4q35上的双重同源盒基因）表达的基于RNA干扰的方法。 本发明的重组腺相关病毒提供了编码降低DUX4表达的微小RNA的DNA。 该方法可用于治疗肌营养不良症，例如面皮囊性肌营养不良症。

公开(公告)号：US20160258037A1

公开(公告)日：2016-09-08

申请号：US14640929

申请日：2015-03-06

申请人： B. Peter McGrail ,  Satish K. Nune ,  Radha K. Motkuri ,  Vassiliki-Alexandra Glezakou ,  Phillip K. Koech ,  Tyler T. Adint ,  Leonard S. Fifield ,  Carlos A. Fernandez ,  Jian Liu

发明人： B. Peter McGrail ,  Satish K. Nune ,  Radha K. Motkuri ,  Vassiliki-Alexandra Glezakou ,  Phillip K. Koech ,  Tyler T. Adint ,  Leonard S. Fifield ,  Carlos A. Fernandez ,  Jian Liu

IPC分类号： C22B26/22 ,  C22B3/00 ,  C22B3/02 ,  C22B3/44 ,  C01B6/04 ,  B01J19/24

CPC分类号： C22B26/22 ,  B01J19/245 ,  B01J2219/24 ,  C01B6/04 ,  C01F5/00 ,  C01F7/34 ,  C07F3/02 ,  C22B3/00 ,  C22B3/02 ,  C22B3/44 ,  C22B5/00

摘要： A system and process are disclosed for production of consolidated magnesium metal products and alloys with selected densities from magnesium-containing salts and feedstocks. The system and process employ a dialkyl magnesium compound that decomposes to produce the Mg metal product. Energy requirements and production costs are lower than for conventional processing.

摘要翻译： 公开了用于从含镁盐和原料生产具有选定密度的固结的镁金属产品和合金的系统和方法。 该系统和方法使用分解产生Mg金属产物的二烷基镁化合物。 能源需求和生产成本低于常规加工。

公开(公告)号：US09434767B2

公开(公告)日：2016-09-06

申请号：US13579030

申请日：2011-12-22

申请人： Qing Xiao ,  Jian Liu ,  Hongling Li ,  Yaping Ma ,  Jiancheng Yuan

发明人： Qing Xiao ,  Jian Liu ,  Hongling Li ,  Yaping Ma ,  Jiancheng Yuan

IPC分类号： C07K7/64 ,  C07K7/16

CPC分类号： C07K7/64 ,  C07K7/16

摘要： The present invention provides a method for preparing atosiban acetate. The method comprises the following steps of: synthesizing to obtain linear atosiban; dissolving the linear atosiban in an acetonitrile aqueous solution, adjusting the pH value with ammonia water, adding H2O2 for oxidizing, filtering, purifying, and transferring salt to obtain the atosiban acetate. In the present invention, an appropriate route is provided, the linear atosiban is synthesized by adopting a solid phase method, and the atosiban is obtained by liquid phase oxidation. The method has the advantages of capabilities of solving the problem of insolubility of the linear atosiban, reducing the reaction size to the maximum extent and shortening reaction time, and being high in yield and easy to industrialize.

摘要翻译： 本发明提供了一种制备醋酸托西班醋酸酯的方法。 该方法包括以下步骤：合成得到线性阿托西班; 将线性阿托西班溶解在乙腈水溶液中，用氨水调节pH值，加入H 2 O 2进行氧化，过滤，纯化和转移盐，得到醋酸阿托品。 在本发明中，提供了适当的途径，通过采用固相法合成线性阿托西班，通过液相氧化获得阿托西班。 该方法具有解决线性阿托西班不溶性问题的能力，最大限度地减少反应尺寸，缩短反应时间，产率高，易于工业化的优点。