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公开(公告)号：USD691569S1
公开(公告)日：2013-10-15
申请号：US29388240
申请日：2011-03-25
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公开(公告)号：USD635525S1
公开(公告)日：2011-04-05
申请号：US29335819
申请日：2009-04-22
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3.发明授权公开(公告)号：US08357923B2
公开(公告)日：2013-01-22
申请号：US12834608
申请日：2010-07-12
IPC分类号： H01L29/06
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44
摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.
摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。
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4.发明申请NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES 有权用于半导体波形和器件的带有阻挡层的镍粘结体系公开(公告)号：US20080210971A1
公开(公告)日：2008-09-04
申请号：US11844127
申请日：2007-08-23
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
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公开(公告)号：US07531840B2
公开(公告)日：2009-05-12
申请号：US11627399
申请日：2007-01-26
IPC分类号： H01L31/0312
CPC分类号： H01L33/145 , H01L33/0004 , H01L33/04
摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。
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6.发明申请公开(公告)号：US20080258161A1
公开(公告)日：2008-10-23
申请号：US11738171
申请日：2007-04-20
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/20 , H01L33/22
摘要： A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.
摘要翻译： 公开了一种发光二极管，其包括在导电载体衬底上由至少p型和n型III族氮化物外延层形成的有源结构。 导电接合系统将有源结构连接到导电载体衬底。 第一透明欧姆接触在与导电载体衬底相邻的有源结构上，第二透明欧姆接触在与导电载体衬底相对的有源结构上，并且第三欧姆接触位于与有源结构相反的导电载体衬底上。
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公开(公告)号：US07482183B2
公开(公告)日：2009-01-27
申请号：US11625377
申请日：2007-01-22
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L33/0004 , H01L33/04
摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。
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8.发明授权公开(公告)号：US09484499B2
公开(公告)日：2016-11-01
申请号：US11738171
申请日：2007-04-20
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/20 , H01L33/22
摘要： A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.
摘要翻译： 公开了一种发光二极管，其包括在导电载体衬底上由至少p型和n型III族氮化物外延层形成的有源结构。 导电接合系统将有源结构连接到导电载体衬底。 第一透明欧姆接触在与导电载体衬底相邻的有源结构上，第二透明欧姆接触在与导电载体衬底相对的有源结构上，并且第三欧姆接触位于与有源结构相反的导电载体衬底上。
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9.发明申请公开(公告)号：US20080083930A1
公开(公告)日：2008-04-10
申请号：US11738122
申请日：2007-04-20
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/22
摘要： A light emitting diode is disclosed that includes a growth substrate, a substantially transparent ohmic contact on a first surface of the growth substrate, a Group III nitride, light-emitting active region on a second surface of the growth substrate, a p-type Group III nitride contact layer on the active region that transmits light generated in the active region, and a substantially transparent ohmic contact on the p-type contact layer.
摘要翻译： 公开了一种发光二极管，其包括生长衬底，生长衬底的第一表面上的基本上透明的欧姆接触，生长衬底的第二表面上的III族氮化物，发光有源区，p型组 III族氮化物接触层，其在有源区域上透射在有源区域中产生的光，以及在p型接触层上实质上是透明的欧姆接触。
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公开(公告)号：US09490235B2
公开(公告)日：2016-11-08
申请号：US13224850
申请日：2011-09-02
IPC分类号： H01L33/54 , H01L25/075 , H01L25/16 , H01L33/52
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。
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