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公开(公告)号：US09905731B2
公开(公告)日：2018-02-27
申请号：US12796365
申请日：2010-06-08
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325
摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
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公开(公告)号：USD691569S1
公开(公告)日：2013-10-15
申请号：US29388240
申请日：2011-03-25
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公开(公告)号：US08390022B2
公开(公告)日：2013-03-05
申请号：US13347243
申请日：2012-01-10
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , C09K11/7731 , C09K11/7734 , C09K11/7774 , G02B6/0023 , G02B6/0068 , G02B6/0073 , H01L33/486 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/01322 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.
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公开(公告)号：USD635525S1
公开(公告)日：2011-04-05
申请号：US29335819
申请日：2009-04-22
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公开(公告)号：US07649209B2
公开(公告)日：2010-01-19
申请号：US11739307
申请日：2007-04-24
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , C09K11/7731 , C09K11/7734 , C09K11/7774 , G02B6/0023 , G02B6/0068 , G02B6/0073 , H01L33/486 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/01322 , H01L2933/0091 , Y02B20/181 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.
摘要翻译： 公开了一种发光二极管。 二极管包括封装支撑件和封装支撑件上的半导体芯片，其中芯片包括在光谱的可见部分中发光的有源区域。 金属触点与封装上的芯片电连通。 基本上透明的密封剂覆盖封装中的芯片。 密封剂中的荧光体发射可见光谱中与芯片发射的频率不同的频率，并响应芯片发出的波长。 还公开了组合发光二极管和平面显示元件的显示元件。 该组合包括基本上平面的显示元件，其中发光二极管位于显示元件的周边上，并且封装支撑件引导二极管的输出基本上平行于显示元件的平面。
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公开(公告)号：US07482183B2
公开(公告)日：2009-01-27
申请号：US11625377
申请日：2007-01-22
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L33/0004 , H01L33/04
摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。
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公开(公告)号：US20080191224A1
公开(公告)日：2008-08-14
申请号：US11673317
申请日：2007-02-09
CPC分类号： H01L33/42 , H01L33/405 , H01L33/50
摘要： A light emitting diode is disclosed that includes a transparent substrate with an absorption coefficient less than 4 per centimeter, epitaxial layers having absorption coefficients of less than 500 per centimeter in the layers other than the active emission layers, an ohmic contact and metallization layer on at least one of the epitaxial layers, with the ohmic contact and metallization layer having a transmission of at least about 80 percent, and bond pads with reflectivity greater than at least about 70 percent.
摘要翻译： 公开了一种发光二极管，其包括吸收系数小于每厘米4的透明衬底，除了有源发射层之外的层中的吸收系数小于每厘米500的外延层，在其上的欧姆接触和金属化层 至少一个外延层，欧姆接触层和金属化层具有至少约80％的透射率，以及反射率大于至少约70％的接合焊盘。
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8.发明申请公开(公告)号：US20080179611A1
公开(公告)日：2008-07-31
申请号：US11899790
申请日：2007-09-07
申请人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。
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公开(公告)号：US09111778B2
公开(公告)日：2015-08-18
申请号：US13011609
申请日：2011-01-21
IPC分类号： H01L33/08 , H01L25/075 , G02F1/1335 , H01L23/00 , H01L33/48 , H01L33/60 , H01L33/62 , H01L33/64
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133608 , H01L24/48 , H01L24/49 , H01L33/486 , H01L33/60 , H01L33/62 , H01L33/642 , H01L2224/29144 , H01L2224/2929 , H01L2224/29399 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2224/83192 , H01L2224/92247 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/01322 , H01L2924/10157 , H01L2924/10158 , H01L2924/12032 , H01L2924/12035 , H01L2924/12041 , H01L2924/181 , H01L2924/0105 , H01L2924/0665 , H01L2224/45099 , H01L2924/00
摘要： Light emitting diode (LED) devices, systems, and methods are disclosed. In one aspect, an illumination panel can be configured to provide backlighting for a liquid crystal display (LCD) panel. The illumination panel can include one or more LEDs arranged in an array. The one or more LEDs can be attached using metal-to-metal die attach methods over an illumination panel, or attached within packages disposed over the illumination panel. In one aspect, the one or more LEDs can be attached using robust metal-to-metal die attach techniques and/or materials disclosed herein.
摘要翻译： 公开了发光二极管（LED）装置，系统和方法。 一方面，照明面板可以被配置为为液晶显示器（LCD）面板提供背光。 照明面板可以包括以阵列布置的一个或多个LED。 一个或多个LED可以使用金属对金属管芯附接方法安装在照明面板上，或者附接在设置在照明面板上的封装内。 在一个方面，可以使用本文公开的鲁棒金属 - 金属管芯附接技术和/或材料来连接一个或多个LED。
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10.发明授权公开(公告)号：US08101961B2
公开(公告)日：2012-01-24
申请号：US11738122
申请日：2007-04-20
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/22
摘要： A light emitting diode is disclosed that includes a growth substrate, a substantially transparent ohmic contact on a first surface of the growth substrate, a Group III nitride, light-emitting active region on a second surface of the growth substrate, a p-type Group III nitride contact layer on the active region that transmits light generated in the active region, and a substantially transparent ohmic contact on the p-type contact layer.
摘要翻译： 公开了一种发光二极管，其包括生长衬底，生长衬底的第一表面上的基本上透明的欧姆接触，生长衬底的第二表面上的III族氮化物，发光有源区，p型组 III族氮化物接触层，其在有源区域上透射在有源区域中产生的光，以及在p型接触层上实质上是透明的欧姆接触。
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