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    External extraction light emitting diode based upon crystallographic faceted surfaces
    1.
    发明授权
    External extraction light emitting diode based upon crystallographic faceted surfaces 有权
    基于晶面刻面的外部提取发光二极管

    公开(公告)号：US08357923B2

    公开(公告)日：2013-01-22

    申请号：US12834608

    申请日：2010-07-12

    申请人： John A. Edmond ,  David B. Slater, Jr. ,  Hua Shuang Kong ,  Matthew Donofrio

    发明人： John A. Edmond ,  David B. Slater, Jr. ,  Hua Shuang Kong ,  Matthew Donofrio

    IPC分类号： H01L29/06

    CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

    摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

    摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。

    LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS
    4.
    发明申请
    LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS 有权
    发光装置，系统和方法

    公开(公告)号：US20120193651A1

    公开(公告)日：2012-08-02

    申请号：US13224850

    申请日：2011-09-02

    申请人： John A. Edmond ,  Hua-Shuang Kong ,  Matthew Donofrio

    发明人： John A. Edmond ,  Hua-Shuang Kong ,  Matthew Donofrio

    IPC分类号： H01L33/08 ,  H01L33/48

    CPC分类号： H01L25/0753 ,  H01L25/167 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

    摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.

    摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。

    Light emitting devices, systems, and methods
    7.
    发明授权
    Light emitting devices, systems, and methods 有权
    发光器件，系统和方法

    公开(公告)号：US09490235B2

    公开(公告)日：2016-11-08

    申请号：US13224850

    申请日：2011-09-02

    申请人： John A. Edmond ,  Hua-Shuang Kong ,  Matthew Donofrio

    发明人： John A. Edmond ,  Hua-Shuang Kong ,  Matthew Donofrio

    IPC分类号： H01L33/54 ,  H01L25/075 ,  H01L25/16 ,  H01L33/52

    CPC分类号： H01L25/0753 ,  H01L25/167 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

    摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.

    摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。

    EXTERNAL EXTRACTION LIGHT EMITTING DIODE BASED UPON CRYSTALLOGRAPHIC FACETED SURFACES
    8.
    发明申请
    EXTERNAL EXTRACTION LIGHT EMITTING DIODE BASED UPON CRYSTALLOGRAPHIC FACETED SURFACES 有权
    外部提取发光二极管基于晶体表面表面

    公开(公告)号：US20100276700A1

    公开(公告)日：2010-11-04

    申请号：US12834608

    申请日：2010-07-12

    申请人： JOHN A. EDMOND ,  David B. Slater, JR. ,  Hua Shuang Kong ,  Matthew Donofrio

    发明人： JOHN A. EDMOND ,  David B. Slater, JR. ,  Hua Shuang Kong ,  Matthew Donofrio

    IPC分类号： H01L33/02 ,  H01L33/30 ,  H01L33/62

    CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

    摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

    摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。

    External extraction light emitting diode based upon crystallographic faceted surfaces
    9.
    发明授权
    External extraction light emitting diode based upon crystallographic faceted surfaces 有权
    基于晶面刻面的外部提取发光二极管

    公开(公告)号：US07791061B2

    公开(公告)日：2010-09-07

    申请号：US11343180

    申请日：2006-01-30

    申请人： John A. Edmond ,  David B. Slater, Jr. ,  Hua Shuang Kong ,  Matthew Donofrio

    发明人： John A. Edmond ,  David B. Slater, Jr. ,  Hua Shuang Kong ,  Matthew Donofrio

    IPC分类号： H01L29/06 ,  H01L21/00

    CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

    摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

    摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。