公开(公告)号：US20120096697A1

公开(公告)日：2012-04-26

申请号：US12911986

申请日：2010-10-26

申请人： Kevin J. GRANNEN ,  Chris FENG ,  Phil NIKKEL ,  John CHOY

发明人： Kevin J. GRANNEN ,  Chris FENG ,  Phil NIKKEL ,  John CHOY

IPC分类号： H01L41/22

CPC分类号： H03H3/02 ,  H01L41/314 ,  H01L41/317 ,  H01L41/319 ,  H03H9/173 ,  H03H9/175 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.

摘要翻译： 形成声谐振器的方法包括在第一电极层上形成种子层，在种子层的表面上直接形成压电层，在压电层上形成第二电极层。 压电层包括多个压电材料晶体，种晶层使晶体的晶轴取向基本上垂直于晶种层的表面。

公开(公告)号：US20130193808A1

公开(公告)日：2013-08-01

申请号：US13362321

申请日：2012-01-31

申请人： Chris FENG ,  John CHOY ,  Kevin J. GRANNEN ,  Phil NIKKEL ,  Tom YEH

发明人： Chris FENG ,  John CHOY ,  Kevin J. GRANNEN ,  Phil NIKKEL ,  Tom YEH

IPC分类号： H01L41/04 ,  H01L41/22 ,  H01L41/047

CPC分类号： H03H9/173 ,  H03H9/02149 ,  H03H9/171 ,  H03H9/178 ,  H03H9/585 ,  Y10T29/42

摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.

摘要翻译： 薄膜体声波谐振器（FBAR）包括第一电极，具有第一c轴取向的第一压电层，在第一电极上具有在第一压电层上具有第二c轴取向的第二压电层，以及 第二电极在第二压电层上。 第一和第二压电层由各自的不同压电材料制成。 通过选择第一和第二c轴取向分别相同或不同，可以将FBAR设置为具有不同的谐振频率。 因此可以扩展FBAR的高低频范围。

公开(公告)号：US20120161902A1

公开(公告)日：2012-06-28

申请号：US13337458

申请日：2011-12-27

申请人： Chris FENG ,  John CHOY ,  Phil NIKKEL

发明人： Chris FENG ,  John CHOY ,  Phil NIKKEL

IPC分类号： H03H9/15

CPC分类号： H03H9/132 ,  H03H9/02118 ,  H03H9/02149 ,  H03H9/175

摘要： A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer, An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode.

摘要翻译： 固体体积声波谐振器，包括第一电极; 第二电极; 设置在所述第一和第二电极之间的压电层; 以及包括多个层并且设置在第一电极，第二电极和压电层下方的声反射器。声反射器，第一电极，第二电极和压电层的重叠限定声谐振器的有源区域 并且压电层在第一电极的边缘上延伸。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。 桥与第一电极的一部分重叠。

公开(公告)号：US20120218057A1

公开(公告)日：2012-08-30

申请号：US13151631

申请日：2011-06-02

申请人： Dariusz BURAK ,  Phil NIKKEL ,  Chris FENG ,  Alexandre SHIRAKAWA ,  John CHOY

发明人： Dariusz BURAK ,  Phil NIKKEL ,  Chris FENG ,  Alexandre SHIRAKAWA ,  John CHOY

IPC分类号： H03H9/54

CPC分类号： H03H9/132 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/02086 ,  H03H9/173 ,  H03H9/175

摘要： A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.

摘要翻译： 薄膜体声波谐振器（FBAR）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。 桥接器设置在第一电极和压电层之间。

公开(公告)号：US20120206015A1

公开(公告)日：2012-08-16

申请号：US13445268

申请日：2012-04-12

申请人： John CHOY ,  Chris FENG ,  Phil NIKKEL

发明人： John CHOY ,  Chris FENG ,  Phil NIKKEL

IPC分类号： H01L41/08 ,  B05D5/12

CPC分类号： H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

摘要翻译： 声谐振器包括第一电极，第二电极和设置在第一和第二电极之间的压电层。 声谐振器还包括设置在第一电极，第二电极和压电层下方的反射元件。 反射元件，第一电极，第二电极和压电层的重叠包括声谐振器的有效区域。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

公开(公告)号：US20120194297A1

公开(公告)日：2012-08-02

申请号：US13443113

申请日：2012-04-10

申请人： John CHOY ,  Chris FENG ,  Phil NIKKEL

发明人： John CHOY ,  Chris FENG ,  Phil NIKKEL

IPC分类号： H03H9/15 ,  H01L41/04

CPC分类号： H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

公开(公告)号：US20120218058A1

公开(公告)日：2012-08-30

申请号：US13167939

申请日：2011-06-24

申请人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

发明人： Dariusz BURAK ,  Alexandre SHIRAKAWA ,  Chris FENG ,  Phil NIKKEL ,  Stefan BADER

IPC分类号： H03H9/54

CPC分类号： H03H9/0211 ,  H03H3/04 ,  H03H9/02007 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.

摘要翻译： 根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。 内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

公开(公告)号：US20120280767A1

公开(公告)日：2012-11-08

申请号：US13101376

申请日：2011-05-05

申请人： Dariusz BURAK ,  Chris FENG ,  Alexandre SHIRAKAWA ,  Stefan BADER

发明人： Dariusz BURAK ,  Chris FENG ,  Alexandre SHIRAKAWA ,  Stefan BADER

IPC分类号： H03H9/56

CPC分类号： H03H9/56 ,  H03H9/132 ,  H03H9/205 ,  H03H9/566 ,  H03H9/582 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/028

摘要： A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

摘要翻译： 一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。 第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。 第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

公开(公告)号：US20130063226A1

公开(公告)日：2013-03-14

申请号：US13232213

申请日：2011-09-14

申请人： Dariusz BURAK ,  Chris FENG ,  Stefan BADER

发明人： Dariusz BURAK ,  Chris FENG ,  Stefan BADER

IPC分类号： H03H9/54

CPC分类号： H03H9/132 ,  H03H9/585 ,  H03H9/587

摘要： An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.

摘要翻译： 声谐振器包括具有横向边界的沟槽的衬底，形成在沟槽上的衬底上的第一电极，并且具有横向边缘，该侧边缘从沟槽的横向边界横向偏移第一距离;第一压电层 第一电极，形成在第一压电层上并具有在沟槽的横向边界内侧向对齐的边缘的第二电极，位于第二电极上的第二压电层，以及位于第二压电层上的第三电极， 其从第二电极的边缘横向偏移。