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公开(公告)号：US10998485B1
公开(公告)日：2021-05-04
申请号：US16741341
申请日：2020-01-13
申请人： John X. Przybysz , Robert M. Young , Aaron Ashley Hathaway , Edward R. Engbrecht , Monica P. Lilly
发明人： John X. Przybysz , Robert M. Young , Aaron Ashley Hathaway , Edward R. Engbrecht , Monica P. Lilly
摘要： A solid state cooler device is disclosed that includes a first superconductor shunt, a first normal metal pad disposed on the first superconductor shunt, and a first insulator layer and a second insulator layer disposed on the normal metal pad and separated from one another by a gap. The solid state cooler device also includes a first superconductor pad disposed on the first insulator layer and a second superconductor pad disposed on the second insulator layer, a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad. Hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad, wherein the first superconductor shunt facilitates even current distribution through the device.
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公开(公告)号：US11600760B2
公开(公告)日：2023-03-07
申请号：US16696372
申请日：2019-11-26
摘要： A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.
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公开(公告)号：US20210063060A1
公开(公告)日：2021-03-04
申请号：US16554203
申请日：2019-08-28
申请人： Robert Miles Young , Aaron Ashley Hathaway , John X. Przybysz , Gregory R. Boyd , Zachary A. Stegen , Edward R. Engbrecht , Aaron A. Pesetski , Marc Eisenzweig Sherwin
发明人： Robert Miles Young , Aaron Ashley Hathaway , John X. Przybysz , Gregory R. Boyd , Zachary A. Stegen , Edward R. Engbrecht , Aaron A. Pesetski , Marc Eisenzweig Sherwin
摘要： A solid state cooler device is provided that includes a substrate, a first and second conductive pad disposed on the substrate, a first and second superconductor pad each having a side with a plurality of conductive pad contact interfaces spaced apart from one another and being in contact with a surface of respective first and second conductive pads, and a first and second insulating layer disposed between respective first and second superconductor pads, and respective ends of a normal metal layer. A bias voltage is applied between one of a first conductive pad or first superconductor pad and one of the second conductive pad or the second superconductor pad to remove hot electrons from the normal metal layer, and the contact area of the plurality of first and second conductive pad contact interfaces inhibits the transfer of heat back to the first and second superconductor pads.
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公开(公告)号：US11333413B2
公开(公告)日：2022-05-17
申请号：US16554203
申请日：2019-08-28
申请人： Robert Miles Young , Aaron Ashley Hathaway , John X. Przybysz , Gregory R. Boyd , Zachary A. Stegen , Edward R. Engbrecht , Aaron A. Pesetski , Marc Eisenzweig Sherwin
发明人： Robert Miles Young , Aaron Ashley Hathaway , John X. Przybysz , Gregory R. Boyd , Zachary A. Stegen , Edward R. Engbrecht , Aaron A. Pesetski , Marc Eisenzweig Sherwin
摘要： A solid state cooler device is provided that includes a substrate, a first and second conductive pad disposed on the substrate, a first and second superconductor pad each having a side with a plurality of conductive pad contact interfaces spaced apart from one another and being in contact with a surface of respective first and second conductive pads, and a first and second insulating layer disposed between respective first and second superconductor pads, and respective ends of a normal metal layer. A bias voltage is applied between one of a first conductive pad or first superconductor pad and one of the second conductive pad or the second superconductor pad to remove hot electrons from the normal metal layer, and the contact area of the plurality of first and second conductive pad contact interfaces inhibits the transfer of heat back to the first and second superconductor pads.
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公开(公告)号：US11950510B2
公开(公告)日：2024-04-02
申请号：US17592329
申请日：2022-02-03
IPC分类号： H10N10/17 , H10N10/01 , H10N10/82 , H10N10/855
CPC分类号： H10N10/17 , H10N10/01 , H10N10/82 , H10N10/8552
摘要： A superconductor junction includes a normal metal layer having a first side and a second side, an insulating layer overlying the second side of the normal metal layer, and a first superconductor layer formed of a first superconductor material that overlies a side of the insulating layer opposite the side that overlies the normal metal layer. The superconductor junction further includes a second superconductor layer formed of a second superconductor material with a first side overlying a side of the first superconductor material opposite the side that overlies the insulating layer. The second superconductor material has a higher diffusion coefficient than the first superconductor material and/or the second superconductor material has a lower recombination coefficient than the first superconductor metal layer. A normal metal layer quasiparticle trap is coupled to a second side of the second superconductor layer.
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公开(公告)号：US11839165B2
公开(公告)日：2023-12-05
申请号：US18163203
申请日：2023-02-01
CPC分类号： H10N60/82 , F25B21/02 , H10N60/0912 , H10N60/805
摘要： A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.
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7.发明申请BILAYER TRENCH FIRST HARDMASK STRUCTURE AND PROCESS FOR REDUCED DEFECTIVITY 有权BILAYER TRENCH第一个HARDMASK结构和减少缺陷的过程公开(公告)号：US20120187546A1
公开(公告)日：2012-07-26
申请号：US13012166
申请日：2011-01-24
申请人： Hakeem B.S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
发明人： Hakeem B.S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
CPC分类号： H01L21/31144 , H01L21/76804 , H01L21/76807
摘要： A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.
摘要翻译： 用于将光刻图案转印到基板中的方法和结构包括在电介质基底上形成电介质硬掩模层。 在介电硬掩模层上形成金属硬掩模层。 在金属硬掩模层上形成保护性覆盖硬掩模层或覆盖膜，并且在覆盖层上形成用于图案转印的光刻结构。 使用限定的光刻结构将图案转移到电介质基板中。 在后续处理过程中，可以移除加盖硬掩模层。
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8.发明授权公开(公告)号：US08796150B2
公开(公告)日：2014-08-05
申请号：US13012166
申请日：2011-01-24
申请人： Hakeem B. S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
发明人： Hakeem B. S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
IPC分类号： H01L21/311 , H01L21/32 , H01L29/06
CPC分类号： H01L21/31144 , H01L21/76804 , H01L21/76807
摘要： A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.
摘要翻译： 用于将光刻图案转印到基板中的方法和结构包括在电介质基底上形成电介质硬掩模层。 在介电硬掩模层上形成金属硬掩模层。 在金属硬掩模层上形成保护性覆盖硬掩模层或覆盖膜，并且在覆盖层上形成用于图案转印的光刻结构。 使用限定的光刻结构将图案转移到电介质基板中。 在后续处理过程中，可以移除加盖硬掩模层。
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9.发明授权公开(公告)号：US07144803B2
公开(公告)日：2006-12-05
申请号：US10826564
申请日：2004-04-16
IPC分类号： H01L21/4763
CPC分类号： H01L21/02112 , H01L21/02205 , H01L21/02271 , H01L21/318 , H01L21/76807 , H01L21/76829 , H01L21/76831
摘要： The present invention includes methods for forming a boron carbo-nitride layer. Additional embodiments include thermal chemical vapor deposition methods for forming a boron carbo-nitride layer. Also integrated circuit devices with a boron carbo-nitride layer are disclosed.
摘要翻译： 本发明包括形成碳氮化硼层的方法。 另外的实施例包括用于形成碳氮化碳层的热化学气相沉积方法。 还公开了具有碳氮化碳层的集成电路器件。
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