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    Cooler device with aluminum oxide insulators
    2.
    发明授权
    Cooler device with aluminum oxide insulators 有权

    公开(公告)号：US11600760B2

    公开(公告)日：2023-03-07

    申请号：US16696372

    申请日：2019-11-26

    申请人： Aaron Ashley Hathaway ,  John X. Przybysz ,  Robert Miles Young ,  Edward R. Engbrecht

    发明人： Aaron Ashley Hathaway ,  John X. Przybysz ,  Robert Miles Young ,  Edward R. Engbrecht

    IPC分类号： H01L39/06 ,  F25B21/02 ,  H01L39/02 ,  H01L39/24

    摘要： A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.

    PCM switch and method of making the same
    7.
    发明授权
    PCM switch and method of making the same 有权

    公开(公告)号：US10700270B2

    公开(公告)日：2020-06-30

    申请号：US15188754

    申请日：2016-06-21

    申请人： Pavel Borodulin ,  Nabil Abdel-Meguid El-Hinnawy ,  Robert Miles Young

    发明人： Pavel Borodulin ,  Nabil Abdel-Meguid El-Hinnawy ,  Robert Miles Young

    IPC分类号： H01H11/00 ,  H01L45/00 ,  G11C13/00

    摘要： One example includes a method for making a switch. The method includes forming an insulating layer over a substrate. The method also includes forming a resistive heating material over the insulating layer. The method also includes depositing a thermally conductive electrically insulating barrier layer over the heating material. The method also includes forming a phase-change material (PCM) component over the barrier layer spaced apart and proximal to the resistive heating material. The method also includes forming a quench layer proximal to at least one of the resistive heating material and the PCM component. The method further includes forming conductive lines from ends of the PCM component and control lines from ends of the resistive heating material.

    Radio frequency device and method using a carbon nanotube array
    10.
    发明授权
    Radio frequency device and method using a carbon nanotube array 有权
    射频装置和使用碳纳米管阵列的方法

    公开(公告)号：US07157990B1

    公开(公告)日：2007-01-02

    申请号：US10850152

    申请日：2004-05-21

    申请人： John Douglas Adam ,  Robert Miles Young

    发明人： John Douglas Adam ,  Robert Miles Young

    IPC分类号： H03H9/46 ,  H03H9/52 ,  H03H9/24

    CPC分类号： H03H9/02259 ,  H03H9/2405 ,  H03H9/505 ,  H03H2009/02488 ,  Y10S977/723 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/932

    摘要： A radio frequency (RF) filter includes a substrate, first and second dielectric layers formed on first and second portions of the substrate, a ground plane formed on a third portion of said substrate, a carbon nanotube array, and first and second electrodes. The third portion of the substrate includes, at least in part, the area between the first and second portions thereof. The carbon nanotube array is formed on a portion of said ground plane between the first and second dielectric layers. The first and second electrodes are formed on the first and second dielectric layers, such that an RF signal may be input to and output from the carbon nanotube array via the first and second signal guides. A third electrode is disposed over the carbon nanotube array and is used to voltage bias the array.

    摘要翻译： 射频（RF）滤波器包括衬底，形成在衬底的第一和第二部分上的第一和第二电介质层，形成在所述衬底的第三部分上的接地平面，碳纳米管阵列以及第一和第二电极。 衬底的第三部分至少部分地包括其第一和第二部分之间的区域。 在第一和第二电介质层之间的所述接地平面的一部分上形成碳纳米管阵列。 第一和第二电极形成在第一和第二电介质层上，使得RF信号可以经由第一和第二信号引导件输入到碳纳米管阵列并从碳纳米管阵列输出。 第三电极设置在碳纳米管阵列上方并用于对阵列施加偏压。