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1.发明授权Electron-emitting devices utilizing electron-emissive particles which typically contain carbon 失效使用通常含有碳的电子发射粒子的电子发射器件
公开(公告)号：US5608283A
公开(公告)日：1997-03-04
申请号：US269283
申请日：1994-06-29
申请人： Jonathan C. Twichell , George R. Brandes , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
发明人： Jonathan C. Twichell , George R. Brandes , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J2201/319 , Y10T428/24124 , Y10T428/24198
摘要： In one electron-emitting device, non-insulating particle bonding material (24) securely bonds electron-emissive carbon-containing particles (22) to an underlying non-insulating region (12). The carbon in each carbon-containing particle is in the form of diamond, graphite, amorphous carbon, or/and silicon carbide. In another electron-emitting device, electron-emissive pillars (22/28) overlie a non-insulating region (12). Each pillar is formed with an electron-emissive particle (22) and an underlying non-insulating pedestal (28).
摘要翻译： 在一个电子发射器件中，非绝缘粒子接合材料（24）将电子发射含碳颗粒（22）牢固地粘合到下面的非绝缘区域（12）上。 每个含碳颗粒中的碳为金刚石，石墨，无定形碳或/和碳化硅的形式。 在另一个电子发射器件中，电子发射柱（22/28）覆盖在非绝缘区（12）上。 每个柱形成有电子发射颗粒（22）和下面的非绝缘基座（28）。
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2.发明授权Structure and fabrication of electron-emitting devices utilizing electron-emissive particles which typically contain carbon 失效使用通常含有碳的电子发射粒子的电子发射器件的结构和制造
公开(公告)号：US5900301A
公开(公告)日：1999-05-04
申请号：US779145
申请日：1997-01-03
申请人： George E. Brandes , Jonathan C. Twichell , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
发明人： George E. Brandes , Jonathan C. Twichell , Michael W. Geis , John M. Macaulay , Robert M. Duboc, Jr. , Christopher J. Curtin
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J2201/319 , Y10T428/24124 , Y10T428/24198
摘要： Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.
摘要翻译： 电子发射器件的制造需要在非绝缘区域（12）上分布电子发射含碳颗粒（22）。 在颗粒分布步骤之后，颗粒可以被制成电子发射。 通常提供颗粒粘合材料（24）以将颗粒结合到非绝缘区域。 粒子接合材料可以包括通过加热形成的碳化物和/或可以通过改变设置在非绝缘区域和颗粒之间的层（32）而形成的碳化物。 在一个实施方案中，颗粒主要从石墨或/和无定形碳区域发射电子。 在另一个实施方案中，颗粒在颗粒分布步骤之前被制成电子发射的。
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3.发明授权Flat-panel display containing structure for enhancing electron emission from carbon-containing cathode 失效平板显示器包含用于增强含碳阴极电子发射的结构
公开(公告)号：US5666025A
公开(公告)日：1997-09-09
申请号：US543981
申请日：1995-10-17
CPC分类号： H01J1/14 , H01J1/304 , H01J2201/30426 , H01J2329/00
摘要： A flat-panel display contains an emissive cathode structure and a generally flat encapsulating body that surrounds the cathode structure to form a sealed enclosure. The cathode structure contains electronegative atoms (22), which consist of oxygen and/or fluorine, chemically bonded to a carbon-containing cathode (10). Atoms (24R) of electropositive metal are chemically bonded to the electronegative atoms.
摘要翻译： 平板显示器包含发射阴极结构和围绕阴极结构以形成密封外壳的大致平坦的封装体。 阴极结构含有化学结合到含碳阴极（10）上的由氧和/或氟组成的电负性原子（22）。 正电性金属的原子（24R）与电负性原子化学键合。
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公开(公告)号：US5463271A
公开(公告)日：1995-10-31
申请号：US90228
申请日：1993-07-09
CPC分类号： H01J1/14 , H01J1/304 , H01J2201/30426 , H01J2329/00
摘要： A cathode structure contains electronegative atoms (22), which consist of oxygen and/or fluorine, chemically bonded to a carbon-containing cathode (10). Atoms (24R) of electropositive metal are chemically bonded to the electronegative atoms. The combination of the electropositive metal atoms and the electronegative atoms enhances the electron emissivity by reducing the work function.
摘要翻译： 阴极结构含有化学键合到含碳阴极（10）的由氧和/或氟组成的电负性原子（22）。 正电性金属的原子（24R）与电负性原子化学键合。 正电性金属原子和电负性原子的组合通过降低功函数来增强电子发射率。
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公开(公告)号：US5728435A
公开(公告)日：1998-03-17
申请号：US445618
申请日：1995-05-22
CPC分类号： H01J1/14 , H01J1/304 , H01J2201/30426 , H01J2329/00
摘要： A cathode structure is formed by a process in which a carbon-containing electron-emissive cathode is subjected to electronegative atoms that include oxygen and/or fluorine. The cathode is also subjected to atoms of electropositive metal, typically after being subjected to the atoms of oxygen and/or fluorine. The combination of the electropositive metal atoms and the electronegative atoms enhances the electron emissivity by reducing the work function.
摘要翻译： 通过其中含碳电子发射阴极经受包括氧和/或氟的电负性原子的方法形成阴极结构。 阴极还经受正电性金属原子，通常在经受氧和/或氟的原子之后。 正电性金属原子和电负性原子的组合通过降低功函数来增强电子发射率。
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6.发明授权
公开(公告)号：US5713775A
公开(公告)日：1998-02-03
申请号：US432848
申请日：1995-05-02
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30457
摘要： Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
摘要翻译： 改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。
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公开(公告)号：US5973451A
公开(公告)日：1999-10-26
申请号：US794361
申请日：1997-02-04
申请人： Michael W. Geis , Nickolai N. Efremow , Kevin E. Krohn , Jonathan C. Twichell , Theodore M. Lyszczarz
发明人： Michael W. Geis , Nickolai N. Efremow , Kevin E. Krohn , Jonathan C. Twichell , Theodore M. Lyszczarz
IPC分类号： H01J1/30
CPC分类号： H01J1/30
摘要： The surface-emission cathodes of the invention are constructed so that the cathode body has a free surface over which electrons are efficiently accelerated after injection from a conductive contact. The junction between the free surface and the contact has the property that the height of the barrier to tunneling from the contact to floating surface states associated with the free surface of the cathode body is lower than both the barrier to emission from the contact to vacuum and the barrier to injection from the contact into the conduction band of the cathode body material. Thus under an applied potential, electrons are injected from the contact into floating surface states associated with the free surface. After acceleration, electrons leave the free surface, either emitted to vacuum or injected into another medium.
摘要翻译： 本发明的表面发射阴极被构造成使得阴极体具有自由表面，电子在从导电接触点注入之后被有效地加速。 自由表面和接触之间的接合点具有这样的特性，即从接触到与阴极体的自由表面相关联的浮动表面状态的穿透的屏障的高度低于从接触到真空的发射屏障， 从触点注入阴极体材料的导带的阻挡层。 因此，在施加电位下，电子从触点注入与自由表面相关的浮动表面状态。 加速后，电子离开自由表面，发射到真空或注入另一种介质。
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公开(公告)号：US5990604A
公开(公告)日：1999-11-23
申请号：US17361
申请日：1998-02-02
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30457
摘要： Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.
摘要翻译： 改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。
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公开(公告)号：US5729094A
公开(公告)日：1998-03-17
申请号：US632026
申请日：1996-04-15
CPC分类号： H01J1/304
摘要： An energetic-electron emitter providing electrons having kinetic energies on the order of one thousand electron volts without acceleration through vacuum. An average electric field of 10.sup.5 V/m to 10.sup.10 V/m applied across a layer of emissive cathode material accelerates electrons inside the layer. The cathode material is a high-dielectric strength, rigid-structure, wide-bandgap semiconductors, especially type Ib diamond. A light-emitting device incorporates the energetic-electron emitter as a source of excitation to luminescence.
摘要翻译： 能量电子发射体提供具有一千电子伏特的动能的电子，而没有加速通过真空。 施加在发射阴极材料层上的105V / m至1010V / m的平均电场加速层内的电子。 阴极材料是高介电强度，刚性结构的宽带隙半导体，特别是Ib型金刚石。 发光装置将能量 - 电子发射体作为激发源发光。
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10.发明申请System and method for providing a high frequency response silicon photodetector 有权提供高频响应硅光电探测器的系统和方法公开(公告)号：US20100025787A1
公开(公告)日：2010-02-04
申请号：US11541975
申请日：2006-10-02
申请人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
发明人： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
IPC分类号： H01L31/0352 , H01L21/30 , H01L31/0232
CPC分类号： H01L27/144 , H01L31/102
摘要： A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
摘要翻译： 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。
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