摘要:
In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.
摘要:
Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 μm. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.
摘要:
In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.
摘要:
In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.
摘要:
Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled. Based on the finding that in a cerium oxide for an abrasive, the kind of improved polishing property depends on the crystal structure of a cerium carbonate, at least one from among polishing properties, such as the polishing rate of a silicon oxide layer, the polishing rate of a silicon nitride layer, the polishing selectivity between the silicon oxide layer and the silicon nitride layer, and WIWNU, can be adjusted by using at least two kinds of cerium oxides selected from the group including (i) a cerium oxide prepared by using a lanthanite-(Ce) crystal structured cerium carbonate, (ii) a cerium oxide prepared by using an orthorhombic crystal structured cerium carbonate, and (iii) a cerium oxide prepared by using a hexagonal crystal structured cerium carbonate, as an abrasive for CMP slurry, and adjusting the mixing ratio of the cerium oxides.
摘要:
In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.
摘要:
Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled. Based on the finding that in a cerium oxide for an abrasive, the kind of improved polishing property depends on the crystal structure of a cerium carbonate, at least one from among polishing properties, such as the polishing rate of a silicon oxide layer, the polishing rate of a silicon nitride layer, the polishing selectivity between the silicon oxide layer and the silicon nitride layer, and WIWNU, can be adjusted by using at least two kinds of cerium oxides selected from the group including (i) a cerium oxide prepared by using a lanthanite-(Ce) crystal structured cerium carbonate, (ii) a cerium oxide prepared by using an orthorhombic crystal structured cerium carbonate, and (iii) a cerium oxide prepared by using a hexagonal crystal structured cerium carbonate, as an abrasive for CMP slurry, and adjusting the mixing ratio of the cerium oxides.
摘要:
Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 μm. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.
摘要:
The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.
摘要:
The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method.The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.