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1.发明授权Magnetic memory, method of recording data to and reproducing data from magnetic memory, and method of operating magnetic memory 有权磁存储器，将数据记录到磁存储器中并再现数据的方法以及操作磁存储器的方法公开(公告)号：US09396811B2
公开(公告)日：2016-07-19
申请号：US14593334
申请日：2015-01-09
发明人： Yasuaki Ootera , Takuya Shimada , Shiho Nakamura
CPC分类号： G11C19/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory according to an embodiment includes: a plurality of groups of magnetic nanowires extending in a direction, each group of magnetic nanowires including at least one magnetic nanowire, each magnetic nanowire having a first terminal and a second terminal; a plurality of recording and reproducing elements corresponding to the groups of magnetic nanowires, each recording and reproducing element writing data to and reading data from magnetic nanowires of a corresponding group of magnetic nanowires, and connecting to the first terminals of the magnetic nanowires of the corresponding group of magnetic nanowires; and an electrode to which the second terminals of the magnetic nanowires of the groups of magnetic nanowires are connected.
摘要翻译： 根据实施例的磁存储器包括：沿一个方向延伸的多组磁性纳米线组，每组磁性纳米线包括至少一个磁性纳米线，每个磁性纳米线具有第一端子和第二端子; 对应于磁纳米线组的多个记录和再现元件，每个记录和再现元件将数据写入并从相应的磁纳米线组的磁纳米线读取数据，并连接到相应的磁纳米线的第一端子 一组磁性纳米线; 以及连接有磁性纳米线组的磁性纳米线的第二端子的电极。
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公开(公告)号：US09293696B2
公开(公告)日：2016-03-22
申请号：US14704359
申请日：2015-05-05
发明人： Yasuaki Ootera , Takuya Shimada , Tsuyoshi Kondo , Hirofumi Morise , Michael Arnaud Quinsat , Shiho Nakamura
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808
摘要： According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.
摘要翻译： 根据一个实施例，磁存储器包括第一磁性单元，第一磁性层，第一记录/再现元件，第一电极和第二电极。 第一磁性单元沿第一方向延伸。 第一磁性单元包括沿第一方向布置的多个磁畴。 第一磁性单元具有中空部分的柱状结构。 第一磁性层连接到第一磁性单元的第一端部，第一磁性层沿与第一方向相交的方向延伸。 第一记录/再现元件设置成与第一磁性层接触。 第一电极电连接到第一磁性层。 第二电极在与第一端部相对的一侧连接到第一磁性单元的第二端部。
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公开(公告)号：US09236106B2
公开(公告)日：2016-01-12
申请号：US14478742
申请日：2014-09-05
发明人： Shiho Nakamura
CPC分类号： G11C11/1675 , G11C5/063 , G11C11/161 , G11C11/1673 , G11C19/0808 , G11C19/0841
摘要： A magnetic domain wall motion memory according to an embodiment includes: a magnetic memory nanowire; a write magnetic wire intersecting with the magnetic memory nanowire; an intermediate joining portion provided in an intersection region between the write magnetic wire and the magnetic memory nanowire; adjacent pinning portions placed on one of the same side and the opposite side of the write magnetic wire as and from the magnetic memory nanowire; a read unit attached to the magnetic memory nanowire; a pair of first electrodes that applies a write current to the write magnetic wire; and a pair of second electrodes that applies a current for causing the magnetic memory nanowire to move a magnetic domain wall, wherein contact faces of the write magnetic wire in contact with the adjacent pinning portions have magnetization configurations antiparallel to each other.
摘要翻译： 根据实施例的磁畴壁运动存储器包括：磁存储器纳米线; 与磁记忆纳米线相交的写磁线; 设置在写磁线和磁存储器纳米线之间的交叉区域中的中间接合部分; 相邻的钉扎部分放置在与磁存储器纳米线相同的写入磁线的相同侧和相对侧上; 附着在磁记忆体纳米线上的读取单元; 一对向写入磁线施加写入电流的第一电极; 以及一对施加用于使磁存储器纳米线移动磁畴壁的电流的第二电极，其中写入磁线与相邻的钉扎部分接触的接触面具有彼此反平行的磁化构型。
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公开(公告)号：US09171888B2
公开(公告)日：2015-10-27
申请号：US14445331
申请日：2014-07-29
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C19/0841 , H01L27/222 , H01L43/02
摘要： According to one embodiment, a magnetic memory device includes a magnetic unit, a switching part, and a reading part. The magnetic unit includes a magnetic wire, and first and second magnetic parts. The magnetic wire includes magnetic domains and has one end and one other end. The first magnetic part is connected with the one end and has a first magnetization. The second magnetic part is connected with the one end, and has a second magnetization. The switching part includes first and second switches. The first switch is connected with the first magnetic part and flows a first current between the first magnetic part and the magnetic wire. The second switch is connected with the second magnetic part and flows a second current between the second magnetic part and the magnetic wire. The reading part is configured to read a magnetization of the magnetic domains.
摘要翻译： 根据一个实施例，磁存储器件包括磁性单元，开关部件和读取部件。 磁性单元包括磁线，以及第一和第二磁性部分。 磁线包括磁畴并具有一端和另一端。 第一磁性部分与一端连接并具有第一磁化。 第二磁性部分与一端连接，并具有第二磁化强度。 开关部分包括第一和第二开关。 第一开关与第一磁性部分连接，并且在第一磁性部分和电磁线之间流动第一电流。 第二开关与第二磁性部分连接，并在第二磁性部分和磁性线之间流动第二电流。 读取部分被配置为读取磁畴的磁化。
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公开(公告)号：US08995163B2
公开(公告)日：2015-03-31
申请号：US13761637
申请日：2013-02-07
发明人： Shiho Nakamura , Hirofumi Morise , Tsuyoshi Kondo
CPC分类号： G11C11/161 , G11C5/147 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer.
摘要翻译： 根据实施例的磁存储器包括：包括多个磁畴和多个畴壁的磁性层，并沿一个方向延伸; 形成有非磁性相和磁性相的钉扎层，沿着磁性层的延伸方向延伸并位于与磁性层相邻的位置; 位于所述钉扎层的与所述磁性层相反的一侧的电极层; 绝缘层，位于钉扎层和电极层之间; 将移动电流流向磁性层的电流引入单元，导致畴壁移动的偏移电流; 写入单元将信息写入到磁性层中; 读取单元从磁性层读取信息; 以及产生施加在钉扎层和电极层之间的电压的电压产生单元。
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公开(公告)号：US09653678B2
公开(公告)日：2017-05-16
申请号：US14562790
申请日：2014-12-08
发明人： Shiho Nakamura , Yasuaki Ootera , Takuya Shimada
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2213/71 , H01L43/02
摘要： A magnetic memory includes a magnetic thin line including a plurality of magnetic domains, a reference layer having a magnetization, a nonmagnetic layer, a first fixed magnetization part having a magnetization, a second fixed magnetization part having a magnetization, a first electrode, a second electrode, and a third electrode.
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公开(公告)号：US09548093B2
公开(公告)日：2017-01-17
申请号：US14722707
申请日：2015-05-27
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： A magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.
摘要翻译： 磁存储元件包括第一磁单元，第二磁单元，第三磁单元，读/写单元，第一电极，第二电极，第三电极，第一电流源，第二电流源。 第三磁性单元连接到第一磁性单元的第一方向的一端和第二磁性单元的第一方向的一端。 读/写单元包括非磁性层和固定层。 非磁性层连接到第三磁性单元。 固定层连接到非磁性层。 第一电流源导致电流在第三电极和第一电极或第二电极中的至少一个之间流动。 第二电流源导致电流在第一电极和第二电极之间流动。
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8.发明授权公开(公告)号：US09184212B2
公开(公告)日：2015-11-10
申请号：US14341059
申请日：2014-07-25
发明人： Hirofumi Morise , Yoshiaki Fukuzumi , Shiho Nakamura , Tsuyoshi Kondo , Hideaki Aochi , Takuya Shimada
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693 , H01L43/08
摘要： A magnetic storage element according to an embodiment includes: a magnetic nanowire having a cross-sectional area varying in a first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between.
摘要翻译： 根据实施例的磁存储元件包括：具有在第一方向上变化的横截面积的磁性纳米线，所述磁性纳米线具有截面积最小的至少两个位置; 具有介于其间的磁性纳米线的第一和第二电极组，所述磁性纳米线包括第一电极与第二电极重叠的第一区域和介于其间的磁性纳米线的第一区域和第二区域中的至少一个， 存在介于其间的磁性纳米线的第二电极，磁纳米线包括存在第一电极的第三区域和不存在插入在其间的磁性纳米线的第二电极和第一电极的第四区域中的至少一个 不存在第二电极，并且介于其间的磁性纳米线存在。
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公开(公告)号：US08982600B2
公开(公告)日：2015-03-17
申请号：US14044089
申请日：2013-10-02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0072 , H01L27/222 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A magnetic memory according to an embodiment includes: a magnetic nanowire; a first electrode and a second electrode provided to different locations of the magnetic nanowire; a third electrode including a magnetic layer, the third electrode being provided to a location of the magnetic nanowire between the first electrode and the second electrode; an intermediate layer provided between the magnetic nanowire and the third electrode, the intermediate layer being in contact with the magnetic nanowire and the third electrode; a fourth electrode of a nonmagnetic material provided onto the magnetic nanowire and being on the opposite side of the magnetic wire from the third electrode; and an insulating layer provided between the magnetic nanowire and the fourth electrode, the insulating layer being in contact with the magnetic nanowire and the fourth electrode.
摘要翻译： 根据实施例的磁存储器包括：磁性纳米线; 设置在所述磁性纳米线的不同位置的第一电极和第二电极; 包括磁性层的第三电极，所述第三电极设置在所述第一电极和所述第二电极之间的所述磁性纳米线的位置; 设置在所述磁性纳米线与所述第三电极之间的中间层，所述中间层与所述磁性纳米线和所述第三电极接触; 设置在所述磁性纳米线上并且位于与所述第三电极相对的所述磁性线的相反侧的非磁性材料的第四电极; 以及设置在所述磁性纳米线与所述第四电极之间的绝缘层，所述绝缘层与所述磁性纳米线和所述第四电极接触。
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公开(公告)号：US09659996B2
公开(公告)日：2017-05-23
申请号：US14921472
申请日：2015-10-23
发明人： Takuya Shimada , Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yasuaki Ootera , Michael Arnaud Quinsat
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C19/0808 , G11C19/0841 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.
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