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    METHOD FOR PRODUCING SUBSTRATE WITH TRANSPARENT ELECTRODE, AND SUBSTRATE WITH TRANSPARENT ELECTRODE
    2.
    发明申请
    METHOD FOR PRODUCING SUBSTRATE WITH TRANSPARENT ELECTRODE, AND SUBSTRATE WITH TRANSPARENT ELECTRODE 审中-公开
    用透明电极生产衬底的方法和具有透明电极的衬底

    公开(公告)号：US20150225837A1

    公开(公告)日：2015-08-13

    申请号：US14424961

    申请日：2013-08-23

    Applicant: KANEKA CORPORATION

    Inventor： Hironori Hayakawa ,  Takashi Kuchiyama ,  Hiroaki Ueda

    IPC: C23C14/08 ,  H05K1/02 ,  H05K1/03 ,  C23C14/34 ,  C23C14/58

    CPC classification number: C23C14/086 ,  C23C14/34 ,  C23C14/5806 ,  G06F3/041 ,  H05K1/0274 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/16 ,  H05K3/22 ,  H05K3/388 ,  H05K2201/0104 ,  H05K2201/0108 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0326 ,  H05K2203/1194

    Abstract: A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688×Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3×10−4 Ωcm.

    Abstract translation: 一种具有低电阻的透明电极的树脂基板及其制造方法，包括：沉积步骤，其中通过溅射法在透明膜基板上形成氧化铟锡的透明电极层，以及结晶步骤，其中透明 电极层结晶。 在沉积步骤中，使用包含氧化铟和氧化锡的溅射靶进行溅射沉积，同时将含有氩和氧的溅射气体引入室中。 优选的是，从引入室中的溅射气体的速率Q和室内的压力P通过公式S（L /秒）= 1.688×Q（sccm）/ P（Pa）计算出的有效排气速度S ）为1,200-5,000（L /秒）。 还优选的是，透明电极层的电阻率小于3×10-4＆OHgr·cm。

    METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM
    5.
    发明申请
    METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM 审中-公开

    公开(公告)号：US20170088938A1

    公开(公告)日：2017-03-30

    申请号：US15126267

    申请日：2015-02-27

    Applicant: KANEKA CORPORATION

    Inventor： Hiroaki Ueda

    IPC: C23C14/34 ,  C23C14/56 ,  C23C14/08

    CPC classification number: C23C14/3492 ,  C23C14/086 ,  C23C14/562 ,  C23C14/568 ,  C23C14/5806

    Abstract: For use in a method for producing a transparent conductive film having an ITO transparent electrode layer, a roll-to-roll sputtering apparatus includes at least three deposition chambers adjacent to a deposition roll. While a transparent film substrate is conveyed on the deposition roll, a base conductive layer is formed by sputtering deposition in one or more deposition chambers, and a main conductive layer is formed thereon by successive sputtering deposition in two or more film deposition chambers. The applied power in the deposition chambers where the underlying conductive layer is formed is 5% to 20% of the total of the applied power in each the deposition chamber where the underlying or main conductive layer is formed. In formation of the main conductive layer, the applied power in the deposition chamber where the ITO thin film is first deposited is less than the applied power in the next deposition chamber.

    Method for producing transparent conductive film
    7.
    发明授权
    Method for producing transparent conductive film 有权

    公开(公告)号：US10151024B2

    公开(公告)日：2018-12-11

    申请号：US15126267

    申请日：2015-02-27

    Applicant: KANEKA CORPORATION

    Inventor： Hiroaki Ueda

    IPC: C23C14/34 ,  C23C14/08 ,  C23C14/56 ,  C23C14/58

    Abstract: For use in a method for producing a transparent conductive film having an ITO transparent electrode layer, a roll-to-roll sputtering apparatus includes at least three deposition chambers adjacent to a deposition roll. While a transparent film substrate is conveyed on the deposition roll, a base conductive layer is formed by sputtering deposition in one or more deposition chambers, and a main conductive layer is formed thereon by successive sputtering deposition in two or more film deposition chambers. The applied power in the deposition chambers where the underlying conductive layer is formed is 5% to 20% of the total of the applied power in each the deposition chamber where the underlying or main conductive layer is formed. In formation of the main conductive layer, the applied power in the deposition chamber where the ITO thin film is first deposited is less than the applied power in the next deposition chamber.

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