公开(公告)号：US11270981B2

公开(公告)日：2022-03-08

申请号：US17023617

申请日：2020-09-17

Applicant: KIOXIA CORPORATION

Inventor： Mikihiko Ito ,  Masaru Koyanagi ,  Masafumi Nakatani ,  Shinya Okuno ,  Shigeki Nagasaka ,  Masahiro Yoshihara ,  Akira Umezawa ,  Satoshi Tsukiyama ,  Kazushige Kawasaki

IPC: G11C16/30 ,  H01L25/065 ,  G11C16/10 ,  G11C16/14 ,  G11C16/32 ,  G11C16/26 ,  H01L27/10 ,  G11C16/08 ,  G11C16/12 ,  G11C16/34 ,  G11C16/04

Abstract: According to one embodiment, a memory device includes: a first chip including a first circuit, first and second terminals; a second chip including a second circuit and a third terminal; and an interface chip including first and second voltage generators. The first chip is between the second chip and the interface chip. The first terminal is connected between the first circuit and the first voltage generator. A third end of the second terminal is connected to the third terminal and a fourth end of the second terminal is connected to the second voltage generator. A fifth end of the third terminal is connected to the second circuit and a sixth end of the third terminal is connected to the second voltage generator via the second terminal. The third end overlaps with the sixth end, without overlapping with the fourth end.

公开(公告)号：US12224236B2

公开(公告)日：2025-02-11

申请号：US17460468

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Hideo Aoki ,  Hideko Mukaida ,  Satoshi Tsukiyama

IPC: H01L23/498 ,  H01L25/18

Abstract: A semiconductor device according to an embodiment includes a substrate and a semiconductor chip. The semiconductor chip is provided over the substrate. The substrate includes a wire layer and an insulating layer. The wire layer includes a wire electrically connected to the semiconductor chip. The insulating layer is provided in contact with the wire layer and includes a glass woven fabric containing a resin. The glass woven fabric includes a plurality of glass fibers that are provided along two or more directions parallel with the glass woven fabric and are woven. The glass fibers differ in at least one of the material, number, and thickness depending on the directions parallel with the glass woven fabric.

公开(公告)号：US12205875B2

公开(公告)日：2025-01-21

申请号：US17691245

申请日：2022-03-10

Applicant: Kioxia Corporation

Inventor： Satoshi Tsukiyama ,  Hideo Aoki ,  Hiroshi Oota ,  Tomoyasu Yamada ,  Yuki Takahashi

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L25/10

Abstract: A semiconductor device according to the present embodiment includes a substrate and a semiconductor chip. The substrate has a first face and a plurality of conductive connection parts provided on the first face. The semiconductor chip has a second face that faces the first face and a plurality of connection bumps provided on the second face and electrically connected to the plurality of conductive connection parts. The conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different in thickness from the conductive connection part arranged in a chip central region of the chip region.

公开(公告)号：US12159856B2

公开(公告)日：2024-12-03

申请号：US17654092

申请日：2022-03-09

Applicant: Kioxia Corporation

Inventor： Satoshi Tsukiyama ,  Hideo Aoki ,  Tsukasa Konno

IPC: H01L23/00 ,  H01L25/10

Abstract: A method for manufacturing a semiconductor device of an embodiment, comprises a step of mounting a first semiconductor element on a board and a step of accommodating a member in which a plate-shaped member and a first adhesive layer are stacked in a collet and pressure-bonding the heated first adhesive layer on the board on which the first semiconductor element is mounted. The collet has a member having the first Young's modulus and a second member having a second Young's modulus which is lower than the first Young's modulus on a surface that accommodates the member in which the plate-shaped member and the first adhesive layer are stacked.

公开(公告)号：US12002686B2

公开(公告)日：2024-06-04

申请号：US17004202

申请日：2020-08-27

Applicant: KIOXIA CORPORATION

Inventor： Satoshi Tsukiyama ,  Satoru Takaku ,  Yuki Sugo ,  Ayana Amano

IPC: H01L25/065 ,  H01L21/50 ,  H01L23/16 ,  H01L21/603 ,  H01L23/29 ,  H01L23/31 ,  H01L25/00

CPC classification number: H01L21/50 ,  H01L23/16 ,  H01L25/0657 ,  H01L21/603 ,  H01L23/295 ,  H01L23/3142 ,  H01L25/50

Abstract: A semiconductor device includes a substrate, a first adhesive layer, a first semiconductor chip, and a second adhesive layer. The first adhesive layer is provided above a first surface of the substrate and includes a plurality of types of resins having different molecular weights and a filler. The first semiconductor chip is provided above the first adhesive layer. The second adhesive layer is provided in at least a part of a first region between the substrate and the first adhesive layer, and the second adhesive layer includes at least one type of resins among the plurality of types of resins having a molecular weight smaller than a molecular weight of other types of resins among the plurality of types of resins, and a filler having a lower concentration than that of the first adhesive layer.