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1.发明授权Overlay measurement based on moire effect between structured illumination and overlay target 有权基于结构照明和覆盖目标之间的莫尔效应的叠加测量公开(公告)号：US09182219B1
公开(公告)日：2015-11-10
申请号：US14160279
申请日：2014-01-21
Applicant: KLA-Tencor Corporation
Inventor： Amnon Manassen , Barry Loevsky , Zeev Bomzon
IPC: G01B11/14 , H01L23/544 , G03F7/20
CPC classification number: G03F7/70633 , G01B11/02 , G01B11/14 , G06K9/00 , G06K9/3216 , G06T7/0004 , H01L22/30 , H01L23/544 , H01L2924/0002 , H01L2924/00
Abstract: A method and system for overly measurement is disclosed. The overlay measurement is performed based on moiré effect observed between structured illumination grids and overlay targets. A structured illumination is used to illuminate a first overlay target and a second overlay target. Upon obtaining an image of the first overlay target illuminated by the structured illumination and an image of the second overlay target illuminated by the structured illumination, relative displacement between the first overlay target and the structured illumination and relative displacement between the second overlay target and the structured illumination are measured. The overlay between the first overlay target and the second overlay target is then measured based on their relative displacements with respect to the structured illumination.
Abstract translation: 公开了一种用于过度测量的方法和系统。 基于在结构化照明网格和覆盖目标之间观察到的莫尔效应来进行覆盖测量。 结构照明用于照亮第一覆盖目标和第二覆盖目标。 在获得由结构化照明照明的第一覆盖目标的图像和由结构化照明照明的第二覆盖目标的图像时，第一覆盖目标和结构化照明之间的相对位移以及第二覆盖目标与结构化照明之间的相对位移 测量照度。 然后基于它们相对于结构化照明的相对位移来测量第一覆盖目标和第二覆盖目标之间的覆盖。
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2.发明申请METROLOGY IMAGING TARGETS HAVING REFLECTION-SYMMETRIC PAIRS OF REFLECTION-ASYMMETRIC STRUCTURES 审中-公开具有反射 - 非对称结构的反射对称对称的计量成像目标公开(公告)号：US20160084758A1
公开(公告)日：2016-03-24
申请号：US14928514
申请日：2015-10-30
Applicant: KLA-Tencor Corporation
Inventor： Amnon Manassen , Yuri Paskover , Barry Loevsky , Daria Negri
CPC classification number: G01N21/4785 , G03F7/70683 , G06F17/5072
Abstract: Metrology targets, design files, and design and production methods thereof are provided. Metrology targets comprising at least one reflection-symmetric pair of reflection-asymmetric structures are disclosed. The structures may or may not be periodic, may comprise a plurality of unevenly-spaced target elements, which may or may not be segmented. The asymmetry may be with respect to target element segmentation or structural dimensions. Also, target design files and metrology measurements of the various metrology targets are disclosed.
Abstract translation: 提供了计量目标，设计文件及其设计和制作方法。 公开了包括至少一个反射对称对的反射不对称结构的计量目标。 结构可以是或可以不是周期性的，可以包括多个不均匀间隔的目标元件，其可以被分割或者不被分割。 不对称性可能与目标元素分割或结构尺寸有关。 此外，还公开了各种度量目标的目标设计文件和度量测量。
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公开(公告)号：US10352766B1
公开(公告)日：2019-07-16
申请号：US14965464
申请日：2015-12-10
Applicant: KLA-Tencor Corporation
Inventor： Barry Loevsky , Ari Krauss , Avraham Bakal
Abstract: Focusing modules and methods are provided, which use a spatial light modulator (SLM) configured to yield a circumferentially sinusoidal pattern to derive focusing signals. For example, the SLM may comprise an optical chopper wheel made of a glass disc with a circumferentially sinusoidal pattern. The circumferentially sinusoidal pattern simplifies phase derivation from the focusing signal, providing a faster and more accurate estimation of defocusing. Signal detection may be carried out by a diode array that provides a more accurate signal faster, as well as a more differentiated analysis of the focusing signal than the one available by current technology.
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4.发明授权公开(公告)号：US09429856B1
公开(公告)日：2016-08-30
申请号：US14160249
申请日：2014-01-21
Applicant: KLA-Tencor Corporation
Inventor： Amnon Manassen , Barry Loevsky
IPC: G03F7/20 , H01L23/544 , G01B11/14
CPC classification number: G03F7/70633 , G01B11/02 , G01B11/14 , G06K9/00 , G06K9/3216 , G06T7/0004 , H01L22/30 , H01L23/544 , H01L2924/0002 , H01L2924/00
Abstract: An overlay target for a semiconductor device is disclosed. The overlay measurement target includes a first ring target located on a first measured layer of the semiconductor device. The first ring target includes a plurality of detectable features arranged in a circular manner having a first circumference. The overlay measurement target also includes a second ring target located on a second measured layer of the semiconductor device. The second ring target includes a plurality of detectable features arranged in a circular manner having a second circumference different from the first circumference. The displacement between a detected center of the first ring target and a detected center of the second ring target indicates an overlay error between the first measured layer and the second measured layer.
Abstract translation: 公开了一种用于半导体器件的覆盖目标。 覆盖测量目标包括位于半导体器件的第一测量层上的第一环目标。 第一环目标包括以圆形方式布置的具有第一圆周的多个可检测特征。 覆盖测量目标还包括位于半导体器件的第二测量层上的第二环目标。 第二环目标包括以圆形方式布置的多个可检测特征，其具有不同于第一圆周的第二圆周。 检测到的第一环目标的中心与第二环目标的检测中心之间的位移表示第一测量层与第二测量层之间的重叠误差。
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5.发明授权Measurement of critical dimension and scanner aberration utilizing metrology targets 有权使用计量目标测量临界尺寸和扫描仪像差公开(公告)号：US09255787B1
公开(公告)日：2016-02-09
申请号：US14160217
申请日：2014-01-21
Applicant: KLA-Tencor Corporation
Inventor： Amnon Manassen , Barry Loevsky
CPC classification number: G03F7/70633 , G01B11/02 , G01B11/14 , G06K9/00 , G06K9/3216 , G06T7/0004 , H01L22/30 , H01L23/544 , H01L2924/0002 , H01L2924/00
Abstract: Metrology targets and method of using the metrology targets for measurement of critical dimension, overlay or scanner aberration are disclosed. A target may include an unresolved grid having a plurality of lines spaced equally apart from each other according to a pre-determined pitch distance and at least one resolved feature tilted at an angle with respect to the unresolved grid. The method may indentify multiple regions of interest (ROIs) and determine a series of center points between the ROIs as the ROIs are being shifted. Critical dimension, overlay or scanner aberration may be calculated by analyzing the series of center points between the ROIs.
Abstract translation: 公开了使用度量目标测量关键尺寸，叠加或扫描仪像差的计量目标和方法。 目标可以包括根据预定的间距距离彼此间隔相等的多条线的未解决的网格，以及相对于未解决的网格以一定角度倾斜的至少一个已解析的特征。 该方法可以识别多个感兴趣区域（ROI），并且当ROI被移动时，确定ROI之间的一系列中心点。 可以通过分析ROI之间的一系列中心点来计算关键尺寸，重叠或扫描仪像差。
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Patent Agency Ranking
6.发明授权公开(公告)号：US10190979B2
公开(公告)日：2019-01-29
申请号：US14928514
申请日：2015-10-30
Applicant: KLA-Tencor Corporation
Inventor： Amnon Manassen , Yuri Paskover , Barry Loevsky , Daria Negri
Abstract: Metrology targets, design files, and design and production methods thereof are provided. Metrology targets comprising at least one reflection-symmetric pair of reflection-asymmetric structures are disclosed. The structures may or may not be periodic, may comprise a plurality of unevenly-spaced target elements, which may or may not be segmented. The asymmetry may be with respect to target element segmentation or structural dimensions. Also, target design files and metrology measurements of the various metrology targets are disclosed.
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7.发明授权公开(公告)号：US09719920B2
公开(公告)日：2017-08-01
申请号：US14497439
申请日：2014-09-26
Applicant: KLA-Tencor Corporation
Inventor： Tzahi Grunzweig , Andrew Hill , Barry Loevsky
CPC classification number: G01N21/4788 , G01B2210/48 , G01N2201/06113 , G03F7/701 , G03F7/70633
Abstract: Scatterometry measurement systems, illumination configurations and respective methods are provided, which comprise illumination beams that have vertical projections on a target plane comprising both a parallel component and a perpendicular component, with respect to a target measurement direction. The illumination beams propagate at an angle to the plane defined by the measurement direction and a normal to the targets surface and generate diffraction images which are off-center at the imaging pupil plane. The eccentric diffraction images are spatially arranged to avoid overlaps and to correspond to measurement requirements such as spot sizes, number of required diffraction orders and so forth. The illumination beams may be implemented using illumination pupil masks, which provide a simple way to increase scatterometry measurements throughput.
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公开(公告)号：US20150022822A1
公开(公告)日：2015-01-22
申请号：US14497439
申请日：2014-09-26
Applicant: KLA-Tencor Corporation
Inventor： Tzahi Grunzweig , Andrew Hill , Barry Loevsky
CPC classification number: G01N21/4788 , G01B2210/48 , G01N2201/06113 , G03F7/701 , G03F7/70633
Abstract: Scatterometry measurement systems, illumination configurations and respective methods are provided, which comprise illumination beams that have vertical projections on a target plane comprising both a parallel component and a perpendicular component, with respect to a target measurement direction. The illumination beams propagate at an angle to the plane defined by the measurement direction and a normal to the targets surface and generate diffraction images which are off-center at the imaging pupil plane. The eccentric diffraction images are spatially arranged to avoid overlaps and to correspond to measurement requirements such as spot sizes, number of required diffraction orders and so forth. The illumination beams may be implemented using illumination pupil masks, which provide a simple way to increase scatterometry measurements throughput.
Abstract translation: 提供散射测量系统，照明配置和各自的方法，其包括相对于目标测量方向在包括平行分量和垂直分量的目标平面上具有垂直投影的照明光束。 照明光束以与测量方向限定的平面成一角度传播，并且与目标表面垂直的方向传播，并产生在成像光瞳平面处偏心的衍射图像。 偏心衍射图像在空间上排列以避免重叠并且对应于测量要求，例如光斑尺寸，所需衍射级数等。 照明光束可以使用照明光瞳屏蔽来实现，其提供了增加散射测量吞吐量的简单方法。
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公开(公告)号：US11060845B2
公开(公告)日：2021-07-13
申请号：US16665759
申请日：2019-10-28
Applicant: KLA-Tencor Corporation
Inventor： Eran Amit , Barry Loevsky , Andrew Hill , Amnon Manassen , Nuriel Amir , Vladimir Levinski , Roie Volkovich
IPC: G01B11/06 , G01B11/27 , G01N21/95 , G01N21/956 , G06F30/392 , G06F30/398 , H01L21/66 , G01N21/88
Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.
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公开(公告)号：US10458777B2
公开(公告)日：2019-10-29
申请号：US14949444
申请日：2015-11-23
Applicant: KLA-TENCOR CORPORATION
Inventor： Eran Amit , Barry Loevsky , Andrew Hill , Amnon Manassen , Nuriel Amir , Vladimir Levinski , Roie Volkovich
Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.
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