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    Multi-Pass Imaging Using Image Sensors with Variably Biased Channel-Stop Contacts
    1.
    发明申请
    Multi-Pass Imaging Using Image Sensors with Variably Biased Channel-Stop Contacts 审中-公开

    公开(公告)号：US20190288028A1

    公开(公告)日：2019-09-19

    申请号：US16355265

    申请日：2019-03-15

    Applicant: KLA-Tencor Corporation

    Inventor： Tzi-Cheng Lai ,  Jehn-Huar Chern ,  Stephen Biellak

    IPC: H01L27/148 ,  H01L27/146 ,  H04N5/357 ,  H04B3/32

    Abstract: First and second images of a semiconductor die or portion thereof are generated. Generating each image includes performing a respective instance of time-domain integration (TDI) along a plurality of pixel columns in an imaging sensor, while illuminating the imaging sensor with light scattered from the semiconductor die or portion thereof. The plurality of pixel columns comprises pairs of pixel columns in which the pixel columns are separated by respective channel stops. While performing a first instance of TDI to generate the first image, a first bias is applied to electrically conductive contacts of the channel stops. While performing a second instance of TDI to generate the second image, a second bias is applied to the electrically conductive contacts of the channel stops. Defects in the semiconductor die or portion thereof are identified using the first and second images.

    Image sensors with grounded or otherwise biased channel-stop contacts
    2.
    发明授权
    Image sensors with grounded or otherwise biased channel-stop contacts 有权

    公开(公告)号：US10903258B2

    公开(公告)日：2021-01-26

    申请号：US16153495

    申请日：2018-10-05

    Applicant: KLA-Tencor Corporation

    Inventor： Tzi-Cheng Lai ,  Jehn-Huar Chern ,  Stephen Biellak

    IPC: H01L27/146 ,  H01L27/148

    Abstract: A back-illuminated image sensor includes a first pixel, a second pixel, and a channel stop situated between the first pixel and the second pixel to isolate the first pixel from the second pixel. The channel stop includes a LOCOS structure and a region of doped silicon beneath the LOCOS structure. The back-illuminated image sensor also includes a first electrically conductive contact that extends through the LOCOS structure and forms an ohmic contact with the region of doped silicon. The first electrically conductive contact may be grounded, negatively biased, or positively biased, depending on the application.

    Back-illuminated sensor with boron layer
    3.
    发明授权
    Back-illuminated sensor with boron layer 有权

    公开(公告)号：US10446696B2

    公开(公告)日：2019-10-15

    申请号：US16151225

    申请日：2018-10-03

    Applicant: KLA-Tencor Corporation

    Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

    IPC: G01N21/88 ,  G01N21/95 ,  H01L31/0216 ,  G01N21/956 ,  H01L27/146 ,  H01L27/148

    Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

    Image Sensors with Grounded or Otherwise Biased Channel-Stop Contacts
    4.
    发明申请
    Image Sensors with Grounded or Otherwise Biased Channel-Stop Contacts 审中-公开

    公开(公告)号：US20190109163A1

    公开(公告)日：2019-04-11

    申请号：US16153495

    申请日：2018-10-05

    Applicant: KLA-Tencor Corporation

    Inventor： Tzi-Cheng Lai ,  Jehn-Huar Chern ,  Stephen Biellak

    IPC: H01L27/146 ,  H01L27/148

    Abstract: A back-illuminated image sensor includes a first pixel, a second pixel, and a channel stop situated between the first pixel and the second pixel to isolate the first pixel from the second pixel. The channel stop includes a LOCOS structure and a region of doped silicon beneath the LOCOS structure. The back-illuminated image sensor also includes a first electrically conductive contact that extends through the LOCOS structure and forms an ohmic contact with the region of doped silicon. The first electrically conductive contact may be grounded, negatively biased, or positively biased, depending on the application.

    Back-Illuminated Sensor With Boron Layer
    5.
    发明申请
    Back-Illuminated Sensor With Boron Layer 有权
    背光照明传感器与硼层

    公开(公告)号：US20160290932A1

    公开(公告)日：2016-10-06

    申请号：US15182200

    申请日：2016-06-14

    Applicant: KLA-Tencor Corporation

    Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

    IPC: G01N21/88 ,  H01L27/146

    CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

    Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

    Abstract translation: 一种检查系统，包括用于将来自照明源的光引导到样品的光学系统（光学器件），以及将从样品反射/散射的光引导到一个或多个图像传感器。 系统的至少一个图像传感器形成在包括具有相对表面的外延层的半导体膜上，形成在外延层的一个表面上的电路元件和在外延层的另一个表面上的纯硼层。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

    Back-Illuminated Sensor With Boron Layer
    6.
    发明申请
    Back-Illuminated Sensor With Boron Layer 有权
    背光照明传感器与硼层

    公开(公告)号：US20130264481A1

    公开(公告)日：2013-10-10

    申请号：US13792166

    申请日：2013-03-10

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

    IPC: H01L31/0216 ,  G01N21/88

    CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

    Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

    Abstract translation: 用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

    TDI imaging system with variable voltage readout clock signals
    9.
    发明授权
    TDI imaging system with variable voltage readout clock signals 有权

    公开(公告)号：US09658170B2

    公开(公告)日：2017-05-23

    申请号：US14308383

    申请日：2014-06-18

    Applicant: KLA-Tencor Corporation

    Inventor： Guowu Zheng ,  Jehn-Huar Chern ,  Binu Balakrishnan Sathy

    IPC: G01N21/95 ,  H04N5/372 ,  H04N5/378

    CPC classification number: G01N21/9501 ,  H04N5/37206 ,  H04N5/378

    Abstract: A Time Delay and Integration (TDI) imaging system utilizing variable voltage readout clock signals having progressively increasing amplitudes defined as a function of pixel row location, where pixel rows positioned to receive/collect/transfer image-related charges at the start of the TDI imaging process are controlled using lower amplitude readout clock signals than pixel rows positioned to receive/collect/transfer image-related charges near the end of the TDI process. The clock signal amplitude for each pixel row is determined by the expected maximum amplitude needed to hold and transfer image charges by the pixels of that row. Multiple (e.g., three) primary phase signals are generated that are passed through splitters to provide multiple identical secondary phase signals, and then drivers having gain control circuitry are utilized to produce voltage readout clock signals having the same phases as the primary phase signals, but having two or more different voltage amplitudes.

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