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公开(公告)号：US10697073B2
公开(公告)日：2020-06-30
申请号：US15608082
申请日：2017-05-30
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Wook Seong Lee , Young-Jin Ko , Young Joon Baik , Jong-Keuk Park , Kyeong Seok Lee , Inho Kim , Doo Seok Jeong
Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
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2.发明授权公开(公告)号：US09726788B2
公开(公告)日：2017-08-08
申请号：US14253522
申请日：2014-04-15
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyeong Seok Lee , Won Mok Kim , Taek Sung Lee , Wook Seong Lee , Doo Seok Jeong , Inho Kim
CPC classification number: G02B5/008 , B82Y15/00 , B82Y40/00 , G01N21/554 , G02B5/0278 , G03F7/2014 , G03F7/70375
Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.
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Patent Agency Ranking
公开(公告)号：US09175387B2
公开(公告)日：2015-11-03
申请号：US13746185
申请日：2013-01-21
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Wook Seong Lee , Hak Joo Lee , Young Joon Baik , Jong Keuk Park
IPC: C23C16/32 , H05H1/24 , C23C16/448
CPC classification number: C23C16/32 , C23C16/4488
Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.
Abstract translation: 公开了通过控制碳酸钨生长期间纳米结构的取向控制而获得的二维纳米结构碳化钨，其过饱和度及其制造方法。 用于制造二维纳米结构碳化钨的方法采用化学气相沉积方法，其中施加氢等离子体以制备在纳米晶体金刚石膜上垂直对准的二维纳米结构碳化钨。 其中施加氢等离子体的化学气相沉积方法包括：将其上形成有纳米晶体金刚石膜的衬底设置在室中的阳极上，将表面渗碳的钨阴极在衬底之上和距离衬底处设置，并施加氢 等离子体进入室。
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4.发明授权Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same 有权使用硫族化物材料的局部表面等离子体共振传感器及其制造方法公开(公告)号：US08785230B2
公开(公告)日：2014-07-22
申请号：US13723555
申请日：2012-12-21
Applicant: Korea Institute of Science and Technology
Inventor： Taek Sung Lee , Kyeong Seok Lee , In Ho Kim , Wook Seong Lee , Doo Seok Jeong , Won Mok Kim , Byung Ki Cheong
IPC: H01L21/00 , H01L31/18 , H01L31/032
CPC classification number: H01L31/186 , B82Y15/00 , G01N21/554 , G01N33/54373 , G02B5/008 , H01L31/0324 , H01L31/18
Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.
Abstract translation: 局部表面等离子体共振传感器可以包括含有硫族化物材料的局部表面等离子体激元层。 硫族化物材料可以包括：包含硒（Se）和碲（Te）中的至少一种的第一材料; 和包含锗（Ge）和锑（Sb）中的至少一种的第二材料。 局部表面等离子体激发层可以通过形成包括硫属化物材料的薄膜并通过在薄膜上照射激光来使薄膜结晶以具有预定图案来制备。
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公开(公告)号：US09482798B2
公开(公告)日：2016-11-01
申请号：US14219506
申请日：2014-03-19
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Kyeong Seok Lee , Won Mok Kim , Taek Sung Lee , Wook Seong Lee , Doo Seok Jeong , Inho Kim
CPC classification number: G02B5/206 , B82Y20/00 , C23C14/0015 , C23C14/0688 , C23C14/3464 , G02B5/008 , G02B5/26 , Y10S977/932
Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.
Abstract translation: 等离子体激光纳米彩色涂层包括复合层，该复合层包括多个金属颗粒层和多个矩阵层，并且具有周期性多层结构，其中金属颗粒层和矩阵层交替布置，介质缓冲层位于下面 复合层和位于介质缓冲层下面的镜层，其中基于金属颗粒层的标称厚度和金属颗粒层之间的间隔来确定等离子体激元纳米彩色涂层的颜色。
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公开(公告)号：US09074281B2
公开(公告)日：2015-07-07
申请号：US13799419
申请日：2013-03-13
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Wook Seong Lee , Hak Joo Lee , Young Joon Baik , Jong Keuk Park
CPC classification number: C23C16/27 , C23C16/02 , C23C16/0254 , C23C16/271 , C23C16/272
Abstract: Methods for fabricating uniform nanocrystalline diamond thin films with minimized voids are presented. These uniform nanocrystalline diamond thin films can be formed on any number of treated silicon oxide surfaces such as on hydrogen plasma treated surfaces of silicon oxide-coated substrates or on hydrocarbon plasma pre-treated surfaces of silicon oxide-coated substrates. It is believed that treating these surfaces results in maximizing electrostatic attraction between these treated surfaces with nanodiamond particles during a subsequent ultrasonic seeding of the nanodiamond particles onto these threated surfaces. This can result in the nanodiamond particles being substantially uniformly distributed and bound on the treated silicon oxide surface.
Abstract translation: 提出了制造具有最小空隙的均匀纳米晶金刚石薄膜的方法。 这些均匀的纳米晶体金刚石薄膜可以在任何数量的经处理的氧化硅表面上形成，例如在经氧化硅涂覆的基底的氢等离子体处理的表面上或在氧化硅涂覆的基底的烃等离子体预处理的表面上。 据信处理这些表面导致在纳米金刚石颗粒随后的超声波接种到这些处理的表面上之后，使纳米金刚石颗粒在这些处理的表面之间的静电吸引力最大化。 这可能导致纳米金刚石颗粒基本上均匀分布并结合在经处理的氧化硅表面上。
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公开(公告)号：US08852406B2
公开(公告)日：2014-10-07
申请号：US13744557
申请日：2013-01-18
Applicant: Korea Institute of Science and Technology
Inventor： Young Joon Baik , Jong Keuk Park , Wook Seong Lee
CPC classification number: C23C16/342 , C23C14/024 , C23C14/06 , C23C14/0647 , C23C14/34 , C23C14/46 , C23C16/271 , Y10T428/30
Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
Abstract translation: 立方氮化硼（cBN）薄膜的制造方法包括将cBN沉积到具有受控的表面不规则特性的纳米晶体金刚石上，以改善在cBN /纳米晶体金刚石的界面处的粘合性，同时在合成cBN时将氢气加入到反应气体中， 控制氢的进料时间，从而可以抑制在金刚石表面发生的有害反应和施加到cBN上的残余应力。 此外，通过该方法获得cBN薄膜结构。 通过使用物理气相沉积工艺在纳米晶体金刚石薄膜上形成cBN薄膜，其中当发生薄膜沉积时供应的反应气体是氩（Ar）与氮气（N 2）的混合气体，氢气 在发生薄膜沉积之后的时刻将（H2）加入到反应气体中。
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