公开(公告)号：US20170169996A1

公开(公告)日：2017-06-15

申请号：US15441781

申请日：2017-02-24

申请人： Kabushiki Kaisha Toshiba

发明人： Akio UI ,  Hisataka HAYASHI ,  Kazuhiro TOMIOKA ,  Hiroshi YAMAMOTO ,  Tsubasa IMAMURA

IPC分类号： H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01J37/32422 ,  H01J37/04 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/68764

摘要： In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.

公开(公告)号：US20130344698A1

公开(公告)日：2013-12-26

申请号：US13784232

申请日：2013-03-04

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Shunsuke OCHIAI ,  Hisataka HAYASHI ,  Yusuke KASAHARA

IPC分类号： H01L21/302

CPC分类号： H01L21/302 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144

摘要： According to one embodiment, a mask layer is formed on a film to be processed. A resist film containing a desired pattern is formed on the mask layer. Etching is performed on the above mentioned mask layer with an etching gas that does not contain fluorine. The method also includes removing the resist film. After the resist film is removed, using the mask layer as a mask, an etching is performed on the to be processed film using a fluorocarbon gas.

摘要翻译： 根据一个实施例，掩模层形成在待加工的膜上。 在掩模层上形成含有所需图案的抗蚀剂膜。 在上述掩模层上用不含氟的蚀刻气体进行蚀刻。 该方法还包括去除抗蚀剂膜。 在去除抗蚀剂膜之后，使用掩模层作为掩模，使用碳氟化合物气体对被处理膜进行蚀刻。

公开(公告)号：US20170186589A1

公开(公告)日：2017-06-29

申请号：US15461630

申请日：2017-03-17

申请人： Kabushiki Kaisha Toshiba

发明人： Yosuke SATO ,  Akio UI ,  Hisataka HAYASHI

IPC分类号： H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32577 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32706 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/3341 ,  H01L21/3065

摘要： A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.