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公开(公告)号：US20100001791A1
公开(公告)日：2010-01-07
申请号：US12376113
申请日：2007-08-02
IPC分类号： H03F15/00
CPC分类号： H03F15/00 , H01L43/065
摘要： A current amplifying element that operates at a higher speed than conventional semiconductor devices is provided. An input current flows through an input current path 60 in a direction X, and a magnetic field generated from a magnet 90 is applied in a direction Z which is perpendicular to the direction X. An output current path 70 is formed under the input current path 60 with an insulator 80 interposed therebetween. Since the direction in which an output current flows is perpendicular to both the input current and the magnetic field, the current is amplified by the galvanomagnetic effects produced by the input current and the magnetic field.
摘要翻译： 提供以比传统半导体器件更高速度工作的电流放大元件。 输入电流沿X方向流过输入电流通路60，从磁铁90产生的磁场以与方向X正交的方向Z施加。输出电流通路70形成在输入电流通路 60，绝缘体80插入其间。 由于输出电流流向的方向垂直于输入电流和磁场两者，所以电流由输入电流和磁场产生的电磁效应放大。
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公开(公告)号：US07902919B2
公开(公告)日：2011-03-08
申请号：US12376113
申请日：2007-08-02
IPC分类号： H03F15/00
CPC分类号： H03F15/00 , H01L43/065
摘要： A current amplifying element that operates at a higher speed than conventional semiconductor devices is provided. An input current flows through an input current path 60 in a direction X, and a magnetic field generated from a magnet 90 is applied in a direction Z which is perpendicular to the direction X. An output current path 70 is formed under the input current path 60 with an insulator 80 interposed therebetween. Since the direction in which an output current flows is perpendicular to both the input current and the magnetic field, the current is amplified by the galvanomagnetic effects produced by the input current and the magnetic field.
摘要翻译： 提供以比传统半导体器件更高速度工作的电流放大元件。 输入电流沿X方向流过输入电流通路60，从磁铁90产生的磁场以与方向X正交的方向Z施加。输出电流通路70形成在输入电流通路 60，绝缘体80插入其间。 由于输出电流流向的方向垂直于输入电流和磁场两者，所以电流由输入电流和磁场产生的电磁效应放大。
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公开(公告)号：US6133012A
公开(公告)日：2000-10-17
申请号：US16080
申请日：1998-01-30
IPC分类号： C12N15/09 , C07H21/04 , C12N9/48 , C12N9/78 , C12N15/00 , C12Q1/37 , C12R1/01 , C12R1/19 , C12N9/52
CPC分类号： C12N9/48
摘要： An acyl peptide hydrolase having an optimum temperature range of 90-95.degree. C. and a gene encoding the same are disclosed. With the above enzyme, it becomes possible to conduct amino terminal analysis of acylated proteins and peptides at high temperatures.
摘要翻译： 公开了具有最佳温度范围为90-95℃的酰基肽水解酶和编码该酰基肽水解酶的基因。 利用上述酶，可以在高温下进行酰化蛋白质和肽的氨基末端分析。
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公开(公告)号：US06653668B2
公开(公告)日：2003-11-25
申请号：US10231000
申请日：2002-08-30
IPC分类号： H01L31072
CPC分类号： H01L29/7783 , H01L27/0605 , H01L29/812
摘要： It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effect transistor in which channel layers for traveling of carriers are formed by a heterostructure of two or more different kinds of materials, and height of a potential barrier of an interface between the different kinds of materials is less than 0.22 eV.
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公开(公告)号：US6001626A
公开(公告)日：1999-12-14
申请号：US982312
申请日：1997-12-01
IPC分类号： C12N9/18
CPC分类号： C12Y301/01032 , C12N9/18 , C12Y301/01004
摘要： Disclosed are a thermophilic phospholipase having an optimum temperature range of 95 to 105.degree. C. which is useful in high-temperature degumming processes in oil refining process and high-temperature processing of phospholipids; and a method for producing a thermophilic phospholipase comprising culturing a microorganism capable of producing the phospholipase in a culture medium and collecting the phospholipase from the resultant culture.
摘要翻译： 公开了具有95至105℃的最佳温度范围的嗜热磷脂酶，其可用于炼油过程中的高温脱胶过程和磷脂的高温加工; 以及生产嗜热磷脂酶的方法，包括在培养基中培养能够产生磷脂酶的微生物并从所得培养物中收集磷脂酶。
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公开(公告)号：US06469326B2
公开(公告)日：2002-10-22
申请号：US09793113
申请日：2001-02-27
IPC分类号： H01L31072
CPC分类号： H01L29/7783 , H01L27/0605 , H01L29/812
摘要： It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effect transistor in which channel layers for traveling of carriers are formed by a heterostructure of two or more different kinds of materials, and height of a potential barrier of an interface between the different kinds of materials is less than 0.22 eV.
摘要翻译： 本发明的一个目的是提供一种结合具有高S / N比的MMIC的射频模块，同时确保高输出。根据本发明的射频模块包括具有场效应晶体管的MMIC，其中 通过两种或多种不同种类的材料的异质结构形成载流子行进通道层，不同种类的材料之间的界面的势垒的高度小于0.22eV。
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7.发明授权
公开(公告)号：US5633516A
公开(公告)日：1997-05-27
申请号：US506193
申请日：1995-07-24
IPC分类号： H01L21/20 , H01L21/338 , H01L29/205 , H01L29/778 , H01L29/812 , H01S5/223 , H01S5/32 , H01L31/0328
CPC分类号： H01L29/205 , H01L29/7783 , H01S5/223 , H01S5/3201
摘要： A semiconductor device has a lattice-mismatched crystal structure including a semiconductor film formed on a substrate with an intervening buffer layer. The buffer layer has a plurality of layers, including first sublayers, or regions, in which an element that controls the lattice constant is provided in increasing mole fraction, and second sublayers, or regions, in which the lattice constant is maintained. The first sublayers and second sublayers are provided in alternating fashion. The resulting device has an increased electron mobility as compared with the prior art.
摘要翻译： 半导体器件具有晶格失配的晶体结构，其包括在具有中间缓冲层的衬底上形成的半导体膜。 缓冲层具有包括第一子层或多个区域的多个层，其中控制晶格常数的元素以增加的摩尔分数提供，以及维持晶格常数的第二子层或区域。 以交替方式提供第一子层和第二子层。 所得到的器件与现有技术相比具有增加的电子迁移率。
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