公开(公告)号：US07670929B2

公开(公告)日：2010-03-02

申请号：US11624070

申请日：2007-01-17

申请人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Giséle Rayssac, legal representative

发明人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.

摘要翻译： 本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。 所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。 键合的衬底可用于电子，光学或光电子应用。

公开(公告)号：US20080014712A1

公开(公告)日：2008-01-17

申请号：US11624070

申请日：2007-01-17

申请人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.

摘要翻译： 本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。 所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。 键合的衬底可用于电子，光学或光电子应用。

公开(公告)号：US20060014363A1

公开(公告)日：2006-01-19

申请号：US11233318

申请日：2005-09-21

申请人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

发明人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： A method for forming a structure that includes a layer that is removed from a donor wafer that has a first layer made of a semiconductor material containing germanium. The method includes the steps of forming a weakness zone in the thickness of the first layer; bonding the donor wafer to a host wafer; and supplying energy so as to weaken the donor wafer at the level of the zone of weakness. The zone of weakness is formed by subjecting the donor wafer to a co-implantation of at least two different atomic species, while the bonding is carried out by performing a thermal treatment at a temperature between 300° C. and 400° C. for a duration of from 30 minutes to four hours.

摘要翻译： 一种用于形成结构的方法，该结构包括从具有由含锗的半导体材料制成的第一层的施主晶片上去除的层。 该方法包括以下步骤：在第一层的厚度上形成弱区; 将施主晶片键合到主晶片; 并提供能量以便在弱化区的水平上削弱施主晶片。 弱化区通过使施主晶片经受至少两种不同原子物质的共同注入而形成，而通过在300℃和400℃之间的温度下进行热处理来进行接合， 持续时间为30分钟至4小时。

公开(公告)号：US07833877B2

公开(公告)日：2010-11-16

申请号：US11877456

申请日：2007-10-23

申请人： Konstantin Bourdelle ,  Carlos Mazure

发明人： Konstantin Bourdelle ,  Carlos Mazure

IPC分类号： H01L21/30

CPC分类号： H01L21/02667 ,  H01L21/2022 ,  H01L21/76254

摘要： This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.

摘要翻译： 本发明涉及一种通过将材料层从供体衬底转移到支撑衬底，然后通过移除材料层的一部分以形成薄层来制造衬底的方法。 除去材料层的一部分以形成薄层的步骤包括在薄层的一部分中形成非晶层，然后使非晶层重结晶。

公开(公告)号：US07449394B2

公开(公告)日：2008-11-11

申请号：US11179713

申请日：2005-07-11

申请人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

发明人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer; bonding the free surface of the second layer to a host wafer; and supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer. Advantageously, the donor wafer includes a SiGe layer, and the co-implantation of atomic species is conducted according to implantation parameters adapted to enable a first species to form the zone of weakness in the SiGe layer, and to enable a second species to provide a concentration peak located beneath the zone of weakness in the donor wafer to thus minimize surface roughness resulting from detachment at the zone of weakness.

摘要翻译： 描述形成半导体结构的方法。 在一个实施例中，该技术包括提供在第一层上具有第一半导体层和第二半导体层并具有自由表面的施主晶片; 通过第二层的自由表面共同植入两种不同的原子物质，以形成第一层中的弱区; 将第二层的自由表面粘合到主晶片; 并且在弱化区域提供能量以分散包含主晶片，第二层和第一层的一部分的半导体结构。 有利地，施主晶片包括SiGe层，并且根据适于使第一种类形成SiGe层中的弱点区域的植入参数来进行原子物质的共同注入，并且使得第二物质能够提供 浓度峰位于供体晶片中的弱点之下，从而使得在弱化区分离导致的表面粗糙度最小化。

公开(公告)号：US20060099779A1

公开(公告)日：2006-05-11

申请号：US11305444

申请日：2005-12-16

申请人： Ian Cayrefourcq ,  Carlos Mazure ,  Konstantin Bourdelle

发明人： Ian Cayrefourcq ,  Carlos Mazure ,  Konstantin Bourdelle

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： H01L21/76254

摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.

摘要翻译： 本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。 该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。 施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的干扰界面， 晶体结构保持不变。 接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域 扰动界面。 将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。

公开(公告)号：US09035474B2

公开(公告)日：2015-05-19

申请号：US12793515

申请日：2010-06-03

申请人： Carlos Mazure ,  Richard Ferrant ,  Konstantin Bourdelle ,  Bich-Yen Nguyen

发明人： Carlos Mazure ,  Richard Ferrant ,  Konstantin Bourdelle ,  Bich-Yen Nguyen

IPC分类号： H01L23/544 ,  H01L21/762 ,  H01L21/18 ,  H01L21/20

CPC分类号： H01L21/76254 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/76251

摘要： The invention relates to a method for manufacturing a semiconductor substrate, in particular, a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor substrate and the handle substrate to obtain a donor-handle compound.

摘要翻译： 本发明涉及一种制造半导体衬底的方法，特别是通过提供一个施主衬底和一个把手衬底来制造绝缘体上半导体衬底，通常形成一个或多个掺杂区域的图案，通常在处理衬底内部，然后附着 例如通过分子结合施主衬底和处理衬底以获得施主手柄化合物。

公开(公告)号：US07799651B2

公开(公告)日：2010-09-21

申请号：US12165365

申请日：2008-06-30

申请人： Carlos Mazure ,  Ian Cayrefourcq ,  Konstantin Bourdelle

发明人： Carlos Mazure ,  Ian Cayrefourcq ,  Konstantin Bourdelle

IPC分类号： H01L21/331

CPC分类号： H01L21/187 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/76254 ,  H01L29/045

摘要： The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.

摘要翻译： 本发明涉及一种处理由半导体材料制成的结构的方法，其中该结构包括限定具有缺陷的公共接口的第一和第二基板。 所述方法包括形成称为所述无组织层的层，所述层包括所述界面，其中所述晶格的至少一部分被混杂; 并重新组织无组织层的晶格，以迫使缺陷更深地进入第一衬底。

公开(公告)号：US07387947B2

公开(公告)日：2008-06-17

申请号：US11305444

申请日：2005-12-16

申请人： Ian Cayrefourcq ,  Carlos Mazure ,  Konstantin Bourdelle

发明人： Ian Cayrefourcq ,  Carlos Mazure ,  Konstantin Bourdelle

IPC分类号： H01L21/20

CPC分类号： H01L21/76254

摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.

摘要翻译： 本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。 该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。 施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的扰动界面， 晶体结构保持不变。 接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域 扰动界面。 将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。

公开(公告)号：US08241942B2

公开(公告)日：2012-08-14

申请号：US13123661

申请日：2009-09-22

申请人： Konstantin Bourdelle ,  Carlos Mazure

发明人： Konstantin Bourdelle ,  Carlos Mazure

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/04 ,  H01L21/425

CPC分类号： H01L27/14689 ,  H01L27/1464

摘要： A method of fabricating a back-illuminated image sensor that includes the steps of providing a first substrate of a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.

摘要翻译： 一种制造背照式图像传感器的方法，包括以下步骤：提供半导体层的第一衬底，特别是硅层，在半导体层上形成电子器件结构，然后仅仅掺杂半导体层。 通过这样做，可以实现改进的光电二极管的掺杂剂分布和电性能，使得最终产品，即图像传感器具有更好的质量。