-
1.发明申请公开(公告)号：US20060099779A1
公开(公告)日：2006-05-11
申请号：US11305444
申请日：2005-12-16
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.
摘要翻译： 本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。 该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。 施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的干扰界面， 晶体结构保持不变。 接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域 扰动界面。 将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。
-
公开(公告)号：US07799651B2
公开(公告)日：2010-09-21
申请号：US12165365
申请日：2008-06-30
IPC分类号： H01L21/331
CPC分类号： H01L21/187 , H01L21/02381 , H01L21/02532 , H01L21/02667 , H01L21/26506 , H01L21/324 , H01L21/76254 , H01L29/045
摘要： The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.
摘要翻译： 本发明涉及一种处理由半导体材料制成的结构的方法，其中该结构包括限定具有缺陷的公共接口的第一和第二基板。 所述方法包括形成称为所述无组织层的层，所述层包括所述界面，其中所述晶格的至少一部分被混杂; 并重新组织无组织层的晶格，以迫使缺陷更深地进入第一衬底。
-
3.发明授权公开(公告)号：US07387947B2
公开(公告)日：2008-06-17
申请号：US11305444
申请日：2005-12-16
IPC分类号： H01L21/20
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.
摘要翻译： 本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。 该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。 施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的扰动界面， 晶体结构保持不变。 接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域 扰动界面。 将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。
-
公开(公告)号：US20080014712A1
公开(公告)日：2008-01-17
申请号：US11624070
申请日：2007-01-17
IPC分类号： H01L21/30
CPC分类号： H01L21/187
摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.
摘要翻译： 本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。 所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。 键合的衬底可用于电子，光学或光电子应用。
-
公开(公告)号：US07833877B2
公开(公告)日：2010-11-16
申请号：US11877456
申请日：2007-10-23
IPC分类号： H01L21/30
CPC分类号： H01L21/02667 , H01L21/2022 , H01L21/76254
摘要： This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.
摘要翻译： 本发明涉及一种通过将材料层从供体衬底转移到支撑衬底，然后通过移除材料层的一部分以形成薄层来制造衬底的方法。 除去材料层的一部分以形成薄层的步骤包括在薄层的一部分中形成非晶层，然后使非晶层重结晶。
-
公开(公告)号：US09035474B2
公开(公告)日：2015-05-19
申请号：US12793515
申请日：2010-06-03
IPC分类号： H01L23/544 , H01L21/762 , H01L21/18 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/187 , H01L21/2007 , H01L21/76251
摘要： The invention relates to a method for manufacturing a semiconductor substrate, in particular, a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor substrate and the handle substrate to obtain a donor-handle compound.
摘要翻译： 本发明涉及一种制造半导体衬底的方法，特别是通过提供一个施主衬底和一个把手衬底来制造绝缘体上半导体衬底，通常形成一个或多个掺杂区域的图案，通常在处理衬底内部，然后附着 例如通过分子结合施主衬底和处理衬底以获得施主手柄化合物。
-
公开(公告)号：US08241942B2
公开(公告)日：2012-08-14
申请号：US13123661
申请日：2009-09-22
IPC分类号： H01L21/00 , H01L21/30 , H01L21/04 , H01L21/425
CPC分类号： H01L27/14689 , H01L27/1464
摘要： A method of fabricating a back-illuminated image sensor that includes the steps of providing a first substrate of a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.
摘要翻译： 一种制造背照式图像传感器的方法，包括以下步骤：提供半导体层的第一衬底，特别是硅层，在半导体层上形成电子器件结构，然后仅仅掺杂半导体层。 通过这样做，可以实现改进的光电二极管的掺杂剂分布和电性能，使得最终产品，即图像传感器具有更好的质量。
-
8.发明申请公开(公告)号：US20110294277A1
公开(公告)日：2011-12-01
申请号：US13093615
申请日：2011-04-25
IPC分类号： H01L21/762 , H01L21/02
CPC分类号： H01L21/76283 , H01L21/76275 , H01L29/66181
摘要： The present invention provides methods for the manufacture of a trench structure in a multilayer wafer that comprises a substrate, an oxide layer on the substrate and a semiconductor layer on the oxide layer. These methods include the steps of forming a trench through the semiconductor layer and the oxide layer and extending into the substrate, and of performing an anneal treatment of the formed trench such that at the inner surface of the trench some material of the semiconductor layer flows at least over a portion of the part of the oxide layer exposed at the inner surface of the trench. Substrates manufactured according to this invention are advantageous for fabricating various semiconductor devices, e.g., MOSFETs, trench capacitors, and the like.
摘要翻译： 本发明提供了在多层晶片中制造沟槽结构的方法，该多层晶片包括衬底，衬底上的氧化物层和氧化物层上的半导体层。 这些方法包括以下步骤：通过半导体层和氧化物层形成沟槽并延伸到衬底中，并且对所形成的沟槽进行退火处理，使得在沟槽的内表面处，半导体层的一些材料在 至少暴露在沟槽内表面的部分氧化物层的一部分。 根据本发明制造的衬底有利于制造各种半导体器件，例如MOSFET，沟槽电容器等。
-
公开(公告)号：US07670929B2
公开(公告)日：2010-03-02
申请号：US11624070
申请日：2007-01-17
申请人： Konstantin Bourdelle , Carlos Mazure , Olivier Rayssac , Pierre Rayssac, legal representative , Giséle Rayssac, legal representative
IPC分类号： H01L21/30
CPC分类号： H01L21/187
摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.
摘要翻译： 本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。 所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。 键合的衬底可用于电子，光学或光电子应用。
-
公开(公告)号：US20080014714A1
公开(公告)日：2008-01-17
申请号：US11832431
申请日：2007-08-01
IPC分类号： H01L21/30
CPC分类号： H01L21/187
摘要： A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.
摘要翻译： 一种制造混合基板的方法，所述方法通过施主和接收器基板的直接接合，其中每个基板具有相应的正面和表面，其中所述接收器基板的前表面具有靠近所述表面的半导体材料，所述施主基板包括： 定义要转移的层的弱点。 该方法包括通过在惰性气氛中将接收器基底的表面暴露于约900℃至约1200℃的温度至少30秒来制备基底表面; 将所制备的基板的正面直接接合在一起以形成复合基板; 对复合基板进行热处理以增加供体和接收器基板的前表面之间的结合强度; 以及通过在弱化区域分离供体基质的剩余部分而从施主衬底转移层。
-
-
-
-
-
-
-
-
-
搜索结果
91 条记录 (耗时 0.019 秒)