公开(公告)号：US20130314842A1

公开(公告)日：2013-11-28

申请号：US13677664

申请日：2012-11-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chong Yun KANG ,  Min Gyu KANG ,  Seok Jin YOON ,  Ji Won CHOI ,  Seung Hyub BAEK ,  Jin Sang KIM

IPC: H01G4/06 ,  H05K5/00

CPC classification number: H01G4/06 ,  H01G4/005 ,  H01G4/085 ,  H01G4/33 ,  H01L28/60 ,  H05K5/0091

Abstract: Provided are a thin film condenser for high-density packaging, a method for manufacturing the same and a high-density package substrate. The thin film condenser for high-density packaging, includes: a support substrate; a lower electrode formed on the support substrate; a dielectric thin film formed on the lower electrode; and an upper electrode formed on the dielectric thin film. Provided also is a method for manufacturing the same. The high-density package substrate, includes: at least two stacked substrates; thin film condensers embedded in the stacked substrates; an internal connection electrode formed in the stacked substrates and connecting the thin film condensers in series or in parallel; a surface electrode formed on the surface of the outermost substrate among the stacked substrates and connected to the internal connection electrode; and an integrated circuit connected to the surface electrode via a bump.

Abstract translation: 提供一种用于高密度封装的薄膜电容器，其制造方法和高密度封装衬底。 用于高密度封装的薄膜冷凝器包括：支撑基板; 形成在所述支撑基板上的下电极; 形成在下电极上的电介质薄膜; 以及形成在电介质薄膜上的上电极。 还提供其制造方法。 高密度封装基板包括：至少两个堆叠的基板; 嵌入在堆叠的基板中的薄膜电容器; 内部连接电极，形成在堆叠的基板中并串联或并联连接薄膜电容器; 表面电极，形成在所述层叠基板的最外侧基板的表面上，与所述内部连接用电极连接; 以及通过凸块与表面电极连接的集成电路。

公开(公告)号：US20160365501A1

公开(公告)日：2016-12-15

申请号：US15158158

申请日：2016-05-18

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun KANG ,  Seok Jin YOON ,  Jin Sang KIM ,  Ji-Won CHOI ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Woo-Suk JUNG ,  Beomjin KWON

IPC: H01L41/053 ,  H01L41/18 ,  H01L41/113

CPC classification number: H01L41/113

Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2  d 2  ( d 1 + d 2 ) 2  ( E 1  d 1 + E 2  d 2 ) , y 2 = E 1  d 1  ( d 1 + d 2 ) 2  ( E 1  d 1 + E 2  d 2 )   and Equation   1 y 1 = E 2  A 2  ( A 1 + A 2 ) 2  ( E 1  A 1 + E 2  A 2 ) , y 2 = E 1  A 1  ( A 1 + A 2 ) 2  ( E 1  A 1 + E 2  A 2 ) . Equation   2

公开(公告)号：US20140048796A1

公开(公告)日：2014-02-20

申请号：US13774722

申请日：2013-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Shin Ik KIM ,  Jin Sang KIM ,  Ji Won CHOI ,  Seok Jin YOON ,  Chong Yun KANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/24 ,  H01L29/408 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/7786

Abstract: Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

Abstract translation: 提供一种氧化物电子器件，包括：氧化物衬底; 氧化物薄膜层，其形成在所述氧化物基板上并且含有相对于所述氧化物基板为异质的氧化物; 以及形成在所述氧化物薄膜层上并且控制在所述氧化物衬底和所述氧化物薄膜层之间的界面处产生的二维电子气（2DEG）的导电性的铁电层。 还提供了一种氧化物电子器件的制造方法，包括：在氧化物衬底上沉积相对于氧化物衬底是异质的氧化物以形成氧化物薄膜层; 以及在所述氧化物薄膜层上形成铁电体层，其中所述铁电体层控制在所述氧化物基板和所述氧化物薄膜层之间的界面处产生的2DEG的导电性。

公开(公告)号：US20130199612A1

公开(公告)日：2013-08-08

申请号：US13677733

申请日：2012-11-15

Applicant: Korea Institute of Science and Technology

Inventor： Ho Won JANG ,  Seok Jin YOON ,  Deok Ha WOO ,  Jin Sang KIM ,  Hyo Jin KWON ,  Chong Yun KANG ,  Ji Won CHOI

IPC: H01L31/0232

CPC classification number: H01L31/02327 ,  B82Y30/00 ,  C03C17/42 ,  C03C2217/425 ,  C03C2217/73 ,  C03C2217/76 ,  H01L31/02168 ,  H01L31/02366 ,  H02S40/10 ,  Y02E10/50 ,  Y10S977/755 ,  Y10T428/24355

Abstract: Provided are a hydrophobic antireflective substrate, a method for manufacturing the same, and a solar cell module including the same. The hydrophobic antireflective substrate includes: a substrate; a nanostructured layer having nanostructured portions formed on the substrate and nanoporous portions formed between the nanostructured portions; and a hydrophobic coating film formed on the nanostructured portions. The method for manufacturing a hydrophobic antireflective substrate includes: forming a nanostructured layer having nanostructured portions and nanoporous portions formed between the nanostructured portions on a substrate; and forming a hydrophobic coating film on the nanostructured portions. In the hydrophobic antireflective substrate disclosed herein, a porous nanostructured layer is formed on the substrate and a hydrophobic coating film is formed on the nanostructured layer, so that the hydrophobic antireflective substrate has ultra-hydrophobic property corresponding to a large water droplet contact angle.

Abstract translation: 提供了一种疏水性抗反射基板，其制造方法以及包括该防反射基板的太阳能电池模块。 疏水性抗反射基板包括：基板; 具有形成在所述基板上的纳米结构部分和形成在所述纳米结构部分之间的纳米多孔部分的纳米结构层; 以及形成在纳米结构部分上的疏水涂膜。 制造疏水性抗反射基板的方法包括：在基板上形成具有纳米结构部分和形成在纳米结构部分之间的纳米多孔部分的纳米结构层; 并在纳米结构部分上形成疏水性涂膜。 在本文公开的疏水性抗反射基板中，在基板上形成多孔纳米结构化层，在纳米结构层上形成疏水性涂膜，疏水性防反射基板具有对应于大的水滴接触角的超疏水性。

公开(公告)号：US20160133917A1

公开(公告)日：2016-05-12

申请号：US14802715

申请日：2015-07-17

Applicant: Korea Institute of Science and Technology

Inventor： Ji-Won CHOI ,  Seok Jin YOON ,  Jin Sang KIM ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Beomjin KWON ,  Haena YIM

IPC: H01M4/04 ,  H01M10/659 ,  H01M4/58 ,  H01M10/04 ,  H01M4/525 ,  H01M4/505

CPC classification number: H01M4/0402 ,  H01M4/0404 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/058 ,  H01M10/659

Abstract: A method of fabricating a cathode for a thin film battery includes depositing a cathode active material on a substrate, and crystallizing the cathode active material by irradiating laser onto the cathode active material. The cathode active material may be deposited on the substrate at normal temperature, and a light and easily processable polymer substrate may be used by crystallizing the cathode active material at low temperature using laser. A thin film battery including the cathode fabricated by the above method has excellent charging/discharging characteristics such as high discharge capacity.

Abstract translation: 一种薄膜电池用阴极的制造方法，其特征在于，在基板上沉积正极活性物质，通过在正极活性物质上照射激光来使阴极活性物质结晶化。 阴极活性材料可以在常温下沉积在基板上，并且可以通过使用激光在低温下使阴极活性材料结晶来使用轻且容易加工的聚合物基底。 包括通过上述方法制造的阴极的薄膜电池具有优异的充电/放电特性，例如高放电容量。

公开(公告)号：US20140217404A1

公开(公告)日：2014-08-07

申请号：US14250821

申请日：2014-04-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ho Won JANG ,  Seok Jin YOON ,  Jin Sang KIM ,  Chong Yun KANG ,  Ji Won CHOI ,  Hi Gyu MOON

IPC: G01N27/12

CPC classification number: G01N27/127 ,  B82Y15/00 ,  B82Y40/00

Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.

Abstract translation: 本公开提供了一种气体传感器，包括：基板; 形成在基板上的电极; 以及形成在所述电极上的气体感测层，其中所述气体感测层是具有在所述电极上形成的纳米柱并且以60-89°的角度相对于所述电极倾斜并且形成气体扩散孔的自加热纳米柱结构 在纳米柱之间。 根据本公开的气体传感器不需要额外的加热器，因为其由于纳米柱状结构而自发加热，并且即使在从外部没有加热时也显示出优异的气体灵敏度。 此外，它可以安装在诸如移动电话的移动设备上，因为它消耗更少的功率。

公开(公告)号：US20130098754A1

公开(公告)日：2013-04-25

申请号：US13692821

申请日：2012-12-03

Applicant: Korea Institute of Science and Technology

Inventor： Ji Won CHOI ,  Seok Jin YOON ,  Won Kook CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Ho Won JANG ,  Keun JUNG

IPC: C23C14/08

CPC classification number: C23C14/086 ,  C23C14/08 ,  C23C14/3414 ,  H01B1/08

Abstract: Disclosed are a transparent conductive composition including a material of the following formula, a target, a transparent conductive thin film using the target, and a method for fabricating the same. The disclosed transparent conductive composition and transparent conductive thin film have superior conductivity (low resistivity) and high light transmittance. Especially, they may be usefully applied for the flexible electronic devices, which may be called the core of the future display industry, because they have low resistivity of not greater than 10−3 Ω·cm and a high light transmittance of at least 90% even when deposition is carried out at room temperature. AlxZn1-xO In the above formula, x is within the range of 0.04≦x≦0.063.

Abstract translation: 公开了一种透明导电组合物及其制造方法，该导电组合物包括下式的材料，靶材，使用该靶材的透明导电薄膜。 所公开的透明导电组合物和透明导电薄膜具有优异的导电性（低电阻率）和高透光率。 特别地，它们可以有用地应用于可能被称为未来显示器行业的核心的柔性电子器件，因为它们具有不大于10-3Ω·cm的低电阻率和至少90％的高透光率 即使在室温下进行沉积也是如此。 AlxZn1-xO在上式中，x在0.04 @ x @ 0.063的范围内。