POLISHING LIQUID FOR METAL FILM AND POLISHING METHOD
    1.
    发明申请
    POLISHING LIQUID FOR METAL FILM AND POLISHING METHOD 失效
    抛光液用于金属膜和抛光方法

    公开(公告)号:US20100323584A1

    公开(公告)日:2010-12-23

    申请号:US12668096

    申请日:2008-07-08

    IPC分类号: B24B1/00 C09K13/00

    摘要: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.

    摘要翻译: 本发明涉及一种用于金属膜的抛光液,其包含7.0重量%或更多的金属氧化剂,水溶性聚合物,氧化金属溶解剂,金属防腐剂和水,条件是抛光总量 金属膜用液体为100重量%,其中,所述水溶性聚合物的重均分子量为15万以上,为选自多元羧酸,多元羧酸和多元羧酸中的至少1种 酯。 根据本发明,提供了一种用于金属膜的抛光液,即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光,并且抛光后的抛光膜的平面度优异, 此外,即使在研磨的初始阶段也可以获得高抛光速率,并且提供了使用抛光液的抛光方法。

    Polishing liquid for metal film and polishing method
    2.
    发明授权
    Polishing liquid for metal film and polishing method 失效
    抛光液用于金属膜和抛光方法

    公开(公告)号:US08501625B2

    公开(公告)日:2013-08-06

    申请号:US12668096

    申请日:2008-07-08

    IPC分类号: C09G1/02 C09G1/04

    摘要: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.

    摘要翻译: 本发明涉及一种用于金属膜的抛光液,其包含7.0重量%或更多的金属氧化剂,水溶性聚合物,氧化金属溶解剂,金属防腐剂和水,条件是抛光总量 金属膜用液体为100重量%,其中,所述水溶性聚合物的重均分子量为15万以上,为选自多元羧酸,多元羧酸和多元羧酸中的至少1种 酯。 根据本发明,提供了一种用于金属膜的抛光液,即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光,并且抛光后的抛光膜的平面度优异, 此外,即使在研磨的初始阶段也可以获得高抛光速率,并且提供了使用抛光液的抛光方法。

    Polishing solution for metal films and polishing method using the same
    3.
    发明授权
    Polishing solution for metal films and polishing method using the same 有权
    金属薄膜抛光液及使用其的抛光方法

    公开(公告)号:US08734204B2

    公开(公告)日:2014-05-27

    申请号:US12937773

    申请日:2009-04-13

    IPC分类号: B24B1/00

    CPC分类号: H01L21/3212 C09G1/02

    摘要: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.

    摘要翻译: 一种用于金属膜的抛光溶液,其包含氧化剂,金属氧化物增溶剂,金属防腐剂,水溶性聚合物和水,其中所述水溶性聚合物是丙烯酸和甲基丙烯酸的共聚物,所述共聚比 的共聚物中的甲基丙烯酸为1-20摩尔%,基于丙烯酸和甲基丙烯酸的总量。

    POLISHING SOLUTION FOR METAL FILMS AND POLISHING METHOD USING THE SAME
    4.
    发明申请
    POLISHING SOLUTION FOR METAL FILMS AND POLISHING METHOD USING THE SAME 有权
    用于金属膜的抛光方法和使用该方法的抛光方法

    公开(公告)号:US20110104992A1

    公开(公告)日:2011-05-05

    申请号:US12937773

    申请日:2009-04-13

    IPC分类号: B24B1/00 C09K13/00

    CPC分类号: H01L21/3212 C09G1/02

    摘要: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.

    摘要翻译: 一种用于金属膜的抛光溶液,其包含氧化剂,金属氧化物增溶剂,金属防腐剂,水溶性聚合物和水,其中所述水溶性聚合物是丙烯酸和甲基丙烯酸的共聚物,所述共聚比 的共聚物中的甲基丙烯酸为1-20摩尔%,基于丙烯酸和甲基丙烯酸的总量。

    POLISHING LIQUID FOR METAL AND METHOD OF POLISHING
    5.
    发明申请
    POLISHING LIQUID FOR METAL AND METHOD OF POLISHING 失效
    金属抛光液和抛光方法

    公开(公告)号:US20100197201A1

    公开(公告)日:2010-08-05

    申请号:US12670292

    申请日:2008-07-28

    IPC分类号: B24B1/00 C09K13/00 C09K13/06

    摘要: Disclosed is a metal-polishing liquid comprising: a metal-oxide-dissolving agent; a metal-oxidizing agent; a metal anticorrosive; a water-soluble polymer having a weight-average molecular weight of 8,000 or higher and having an anionic functional group and a nonionic functional group; and water, and having a pH within the range of 2.5 or higher but 5.0 or less. The metal-polishing liquid is effective in reducing the frictional force in polishing which generates during CMP. And is highly effective in flattening the surface of a work to be polished.

    摘要翻译: 公开了一种金属抛光液,其包含:金属氧化物溶解剂; 金属氧化剂; 金属防腐; 重均分子量为8000以上且具有阴离子官能团和非离子官能团的水溶性聚合物; 和水,并且pH在2.5以上至5.0以下的范围内。 金属抛光液有效减少在CMP期间产生的抛光摩擦力。 并且对于要抛光的工件的表面变平,是非常有效的。

    Polishing liquid for metal and method of polishing
    6.
    发明授权
    Polishing liquid for metal and method of polishing 失效
    金属抛光液和抛光方法

    公开(公告)号:US08288282B2

    公开(公告)日:2012-10-16

    申请号:US12670292

    申请日:2008-07-28

    IPC分类号: C09K13/00

    摘要: Disclosed is a metal-polishing liquid comprising: a metal-oxide-dissolving agent; a metal-oxidizing agent; a metal anticorrosive; a water-soluble polymer having a weight-average molecular weight of 8,000 or higher and having an anionic functional group and a nonionic functional group; and water, and having a pH within the range of 2.5 or higher but 5.0 or less. The metal-polishing liquid is effective in reducing the frictional force in polishing which generates during CMP. And is highly effective in flattening the surface of a work to be polished.

    摘要翻译: 公开了一种金属抛光液,其包含:金属氧化物溶解剂; 金属氧化剂; 金属防腐; 重均分子量为8000以上且具有阴离子官能团和非离子官能团的水溶性聚合物; 和水,并且pH在2.5以上至5.0以下的范围内。 金属抛光液有效减少在CMP期间产生的抛光摩擦力。 并且对于要抛光的工件的表面变平,是非常有效的。

    Method of making contact probe
    7.
    发明授权
    Method of making contact probe 有权
    制作接触探针的方法

    公开(公告)号:US09134346B2

    公开(公告)日:2015-09-15

    申请号:US13168136

    申请日:2011-06-24

    摘要: A method of making a contact probe including a step of making a first printed wiring board having a signal electrode and a ground electrode used as a contact part of the contact probe with respect to a measuring object, in which the signal electrode and ground electrode are formed of a metal wiring pattern, and making a second printed wiring board with a coaxial line structure having a shield electrode which encloses a signal line and the surroundings of the signal line through an insulating layer. The signal electrode of the first printed wiring board and the signal line of the second printed wiring board are electrically connected together, and the ground electrode of the first printed wiring board and the shield electrode of the second printed wiring board are electrically connected together.

    摘要翻译: 一种制造接触探针的方法,包括以下步骤:制作具有信号电极和接地电极的第一印刷线路板,所述信号电极和接地电极相对于测量对象用作接触探针的接触部分,其中信号电极和接地电极为 由金属布线图案形成,并且制造具有同轴线结构的第二印刷布线板,其具有通过绝缘层包围信号线和信号线周围的屏蔽电极。 第一印刷电路板的信号电极和第二印刷电路板的信号线电连接在一起,并且第一印刷线路板的接地电极和第二印刷线路板的屏蔽电极电连接在一起。

    PRODUCT QUALITY CONTROL METHOD
    8.
    发明申请
    PRODUCT QUALITY CONTROL METHOD 有权
    产品质量控制方法

    公开(公告)号:US20140136157A1

    公开(公告)日:2014-05-15

    申请号:US14129858

    申请日:2012-07-06

    IPC分类号: G06F17/50

    摘要: A real-time release testing capable of constantly ensuring quality, a method for quality testing of a product using real-time release testing, a method for quality testing of an in-process product and/or an end product by real-time release testing, comprising the step of assessing the quality from design space established with only material attributes as inputs, and a manufacturing parameter-independent method for quality testing of a product using real-time release testing.

    摘要翻译: 实时发布测试,可以不断确保质量,使用实时发布测试对产品进行质量检测的方法,通过实时发布测试对进程内产品和/或最终产品进行质量检测的方法 包括以仅将材料属性作为输入建立的设计空间的质量进行评估的步骤,以及使用实时释放测试对产品进行质量测试的制造参数无关方法。

    Flexible wiring substrate
    9.
    发明授权
    Flexible wiring substrate 有权
    柔性布线基板

    公开(公告)号:US08481855B2

    公开(公告)日:2013-07-09

    申请号:US12959842

    申请日:2010-12-03

    IPC分类号: H01R4/00

    摘要: A plurality of protruding substrate portions (12) is extended from positions placed at an interval from each other along a peripheral edge of a wiring substrate (10). Each of the protruding substrate portions (12) is provided with wiring terminals (15), (16) electrically connected to each of a plurality of electrode terminals provided to an electrical instrument substrate. A cut-out part (18) is formed in a peripheral edge (13a) between the protruding substrate portions (12) in the wiring substrate (10).

    摘要翻译: 多个突出基板部分(12)沿着布线基板(10)的周缘彼此间隔设置的位置延伸。 每个突出基板部分(12)设置有电连接到设置在电气仪器基板上的多个电极端子中的布线端子(15),(16)。 在配线基板(10)的突出基板部(12)之间的周缘部(13a)上形成切口部(18)。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08476714B2

    公开(公告)日:2013-07-02

    申请号:US13005196

    申请日:2011-01-12

    IPC分类号: H01L21/70

    摘要: A semiconductor device includes a semiconductor substrate; an n-channel MOS transistor including a first gate insulating film provided on a p-type layer, a first gate electrode made of TiN, and a first upper gate electrode made of semiconductor doped with impurities; and a p-channel MOS transistor including a second gate insulating film provided on an n-type layer, a second gate electrode including at least as a part, a TiN layer made of TiN crystal in which a ratio of (111) orientation/(200) orientation is about 1.5 or more, and a second upper gate electrode made of semiconductor doped with impurities.

    摘要翻译: 半导体器件包括半导体衬底; 包括设置在p型层上的第一栅极绝缘膜,由TiN制成的第一栅极电极和由掺杂有杂质的半导体制成的第一上部栅电极的n沟道MOS晶体管; 以及包括设置在n型层上的第二栅极绝缘膜的p沟道MOS晶体管,至少部分包括由TiN晶体制成的TiN层的第二栅电极,其中(111)取向/( 200)取向为约1.5以上,第二上栅电极由掺杂有杂质的半导体制成。