公开(公告)号：US20230337482A1

公开(公告)日：2023-10-19

申请号：US18157571

申请日：2023-01-20

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu Kang ,  SeungChan Choi ,  Younghyun Ko ,  Uyhyun Choi ,  Jaeman Jang

IPC: H10K59/126 ,  H10K59/121 ,  H01L29/786 ,  H01L29/417

CPC classification number: H10K59/126 ,  H10K59/1213 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/78672 ,  H01L29/78633 ,  H01L29/41733

Abstract: An organic light emitting display device is disclosed that uses a hybrid type thin film transistor. The organic light emitting display device includes a conductive pattern with a higher etch resistance compared to an inorganic thin film in an upper edge of a semiconductor pattern, and is thereby capable of simplifying a manufacturing process of a substrate on which an array of hybrid type thin film transistors each including multiple layers is disposed, and improving the performance of thin film transistors formed on the array substrate. The organic light emitting display device can represent a variety of grayscale images at low grayscales as a driving thin film transistor including an oxide semiconductor pattern is designed to have an increased s-factor value.

公开(公告)号：US10693015B2

公开(公告)日：2020-06-23

申请号：US16210862

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32

Abstract: A thin film transistor includes an oxide semiconductor layer on a substrate. The oxide semiconductor layer includes a channel portion, a first channel connecting portion connected to a first end of the channel portion, and a second channel connecting portion connected to a second end of the channel portion. A thickness of the second channel connecting portion is different from a thickness of the first channel connecting portion. The first end of the channel portion has a same thickness as the thickness of the first channel connecting portion, and the second end of the channel portion has a same thickness as the thickness of the second channel connecting portion.

公开(公告)号：US11557680B2

公开(公告)日：2023-01-17

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  JungSeok Seo ,  PilSang Yun ,  InTak Cho

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US10978499B2

公开(公告)日：2021-04-13

申请号：US16525482

申请日：2019-07-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  SeHee Park ,  DaeHwan Kim ,  PilSang Yun

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20240204076A1

公开(公告)日：2024-06-20

申请号：US18461336

申请日：2023-09-05

Applicant: LG Display Co., Ltd.

Inventor： KyungChul Ok ,  Uyhyun Choi ,  SeungChan Choi ,  Min-Gu Kang ,  Jaeman Jang ,  DaeHwan Kim ,  Seoyeon Im

IPC: H01L29/49 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L21/02126

Abstract: The thin film transistor, fabrication method thereof, and display apparatus comprising the same are provided. The thin film transistor comprises a base substrate, an oxide semiconductor layer on the base substrate, a channel protection layer in contact with the oxide semiconductor layer, and a gate electrode spaced apart from the oxide semiconductor layer and at least partially overlapped with the oxide semiconductor layer, and the channel protection layer includes carbon.

公开(公告)号：US11658189B2

公开(公告)日：2023-05-23

申请号：US17196805

申请日：2021-03-09

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  SeHee Park ,  DaeHwan Kim ,  PilSang Yun

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US11574843B2

公开(公告)日：2023-02-07

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul Ok ,  JungSeok Seo ,  PilSang Yun ,  Jiyong Noh ,  Jaeman Jang ,  InTak Cho

IPC: H01L21/8234 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

公开(公告)号：US11195862B2

公开(公告)日：2021-12-07

申请号：US16517263

申请日：2019-07-19

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  InTak Cho

IPC: H01L27/12 ,  H01L51/05 ,  H01L29/51 ,  H01L29/49

Abstract: A thin film transistor includes an active layer on a substrate, a gate electrode configured to be spaced from the active layer and partially overlapped with the active layer, and a gate insulating layer, at least a part of the gate insulating layer being disposed between the active layer and the gate electrode, wherein the gate insulating layer includes a first gate insulating layer between the active layer and the gate electrode, and a second gate insulating layer configured to have a dielectric constant (k) which is different from a dielectric constant of the first gate insulating layer, and disposed in a same layer as the first gate insulating layer, and wherein at least a part of the second gate insulating layer is disposed between the active layer and the gate electrode.

公开(公告)号：US10741697B2

公开(公告)日：2020-08-11

申请号：US16211151

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jiyong Noh ,  Jaeman Jang ,  JuHeyuck Baeck ,  PilSang Yun

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/38 ,  G02F1/1368 ,  H01L27/32

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer on a substrate, a gate electrode insulated from the oxide semiconductor layer to overlap at least a portion of the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor layer on the substrate and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer includes nitrogen of 1 at % to 5 at % concentration with respect to number of atoms, and the second oxide semiconductor layer has a nitrogen concentration which is lower than a nitrogen concentration of the first oxide semiconductor layer and a gradient of the nitrogen concentration such that the nitrogen concentration is lowered in a direction closer to the gate electrode.

公开(公告)号：US11901461B2

公开(公告)日：2024-02-13

申请号：US17958167

申请日：2022-09-30

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  PilSang Yun ,  Jiyong Noh ,  InTak Cho

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/6675 ,  H01L29/78618 ,  H01L29/78696

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.