公开(公告)号：US20240282863A1

公开(公告)日：2024-08-22

申请号：US18634854

申请日：2024-04-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

公开(公告)号：US20180151606A1

公开(公告)日：2018-05-31

申请号：US15824974

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  HongRak CHOI ,  PilSang YUN ,  HyungJoon KOO ,  Kwanghwan JI ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L51/56 ,  H01L27/32 ,  H01L29/49

CPC classification number: H01L27/1288 ,  H01L27/0733 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78696 ,  H01L51/56 ,  H01L2924/1426

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

公开(公告)号：US20230071859A1

公开(公告)日：2023-03-09

申请号：US17901192

申请日：2022-09-01

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  KwangMin JO ,  JeongWoo PARK

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin film transistor substrate and a display device comprising the same are provided, in which the thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, a second gate electrode spaced apart from the second active layer, and an auxiliary gate electrode between the second active layer and the second gate electrode, the first active layer and the second active layer are integrally formed and connected to each other, the auxiliary gate electrode is integrally formed with the first gate electrode and spaced apart from the second active layer and the second gate electrode, and the second gate electrode overlaps at least a portion of the auxiliary gate electrode.

公开(公告)号：US20210384357A1

公开(公告)日：2021-12-09

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20210305341A1

公开(公告)日：2021-09-30

申请号：US17344903

申请日：2021-06-10

Applicant: LG Display Co., Ltd.

Inventor： JungSeok SEO ,  PilSang YUN ,  SeHee PARK ,  Jiyong NOH

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

公开(公告)号：US20210193699A1

公开(公告)日：2021-06-24

申请号：US17196805

申请日：2021-03-09

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  SeHee PARK ,  DaeHwan KIM ,  PilSang YUN

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20230207702A1

公开(公告)日：2023-06-29

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/4908 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20200184903A1

公开(公告)日：2020-06-11

申请号：US16694674

申请日：2019-11-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak CHO ,  PilSang YUN ,  Jeyong JEON ,  Jiyong NOH ,  SeHee PARK

IPC: G09G3/3291 ,  H01L27/32 ,  G09G3/3266

Abstract: An electronic device can include: a panel; a driver circuit configured to drive the panel; and first and second transistors disposed in the panel, the first and second transistors including: a first electrode of the first transistor, the first electrode being disposed on a substrate; a first insulating film disposed on the substrate, overlapping an edge of the first electrode and having an open area for receiving portions of the second transistor; a second electrode of the first transistor, the second electrode being disposed on the first insulating film and overlapping with a portion of the first electrode; third and fourth electrodes of the second transistor, the third electrode and the fourth electrode being disposed on a same layer as the second electrode and spaced apart from the second electrode, the open area of the first insulating film being disposed between the third electrode and the fourth electrode; a first active layer of the first transistor, the first active layer being disposed on the first electrode, the first insulating film and the second electrode; and a second active layer of the second transistor, the second active layer being disposed on the third and fourth electrodes and across the open area of the first insulating film.

公开(公告)号：US20200161476A1

公开(公告)日：2020-05-21

申请号：US16575077

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SangYun SUNG ,  SeHee PARK ,  Jiyong NOH ,  InTak CHO ,  PilSang YUN

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

公开(公告)号：US20190206972A1

公开(公告)日：2019-07-04

申请号：US16219440

申请日：2018-12-13

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  PilSang YUN ,  Jaeyoon PARK

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52 ,  G09G3/3291

Abstract: An organic light emitting display panel can include a substrate; pixels disposed on the substrate; a driving transistor including: a driving active layer, a driving gate electrode overlapping with the driving active layer, a driving first conductor extended from one end of the driving active layer, a driving second conductor extended from the other end of the driving active layer, and a driving first gate insulating film overlapping with the driving active layer; a switching transistor including: a switching active layer, a switching gate electrode overlapping with the switching active layer, a switching first conductor extended from one end of the switching active layer, a switching second conductor extended from the other end of the switching active layer, and a switching first gate insulating film overlapping with the switching active layer; an organic light emitting diode; and a second gate insulating film disposed between the driving and switching gate electrodes of the driving and switching transistors, and the driving first conductor, the driving second conductor, the driving first gate insulating film, the switching first conductor, the switching second conductor and the switching first gate insulating film.