公开(公告)号：US20240047582A1

公开(公告)日：2024-02-08

申请号：US18226067

申请日：2023-07-25

Applicant: LG Display Co., Ltd.

Inventor： Sungju CHOI ,  Jaeyoon PARK ,  JungSeok SEO ,  Seoyeon IM ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L29/417 ,  H10K59/121 ,  H10K59/126

CPC classification number: H01L29/78633 ,  H01L29/41733 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/126

Abstract: Discussed is a thin film transistor and a display apparatus. The thin film transistor can include a light shielding layer disposed on the substrate and formed of, or include conductive materials, an active layer disposed on the light shielding layer and overlapping the light shielding layer, a source electrode connected to a first side of the active layer and the light shielding layer, a drain electrode connected to a second side of the active layer, a gate electrode overlapping the active layer, and a connection layer disposed between the light shielding layer and the active layer, and electrically connecting the light shielding layer with the active layer.

公开(公告)号：US20210143279A1

公开(公告)日：2021-05-13

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20250089301A1

公开(公告)日：2025-03-13

申请号：US18955048

申请日：2024-11-21

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20180374956A1

公开(公告)日：2018-12-27

申请号：US16019294

申请日：2018-06-26

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335 ,  H01L27/12 ,  H01L29/66

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20230420572A1

公开(公告)日：2023-12-28

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/41733 ,  G09G2310/08 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20230140193A1

公开(公告)日：2023-05-04

申请号：US17977864

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： Sungju CHOI ,  JungSeok SEO ,  Younghyun KO ,  Jaeyoon PARK ,  Seoyeon IM ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.

公开(公告)号：US20220344512A1

公开(公告)日：2022-10-27

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20200185531A1

公开(公告)日：2020-06-11

申请号：US16790591

申请日：2020-02-13

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1335

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20190140101A1

公开(公告)日：2019-05-09

申请号：US16058737

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： Seoyeon IM ,  HeeSung LEE ,  SeungJin KIM ,  SungKi KIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L21/385

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.

公开(公告)号：US20250040192A1

公开(公告)日：2025-01-30

申请号：US18918548

申请日：2024-10-17

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.