公开(公告)号：US10367104B2

公开(公告)日：2019-07-30

申请号：US15858798

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Jaewoo Choi ,  Chungyi Kim ,  Joohyun Koh

IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

Abstract: Disclosed is a solar cell including: a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a passivation layer on a light incident surface of the semiconductor substrate. The passivation layer includes a first layer in contact with the light incident surface of the semiconductor substrate and formed of silicon oxynitride for ultraviolet stability. The first layer includes a plurality of phases of the silicon oxynitride, and the plurality of phases are formed of the silicon oxynitride having different compositions.

公开(公告)号：US09887314B2

公开(公告)日：2018-02-06

申请号：US15178274

申请日：2016-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Hyungjin Kwon ,  Chungyi Kim ,  Junghoon Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L21/02

CPC classification number: H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

Abstract: Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

公开(公告)号：US11121269B2

公开(公告)日：2021-09-14

申请号：US16430018

申请日：2019-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Jaewoo Choi ,  Chungyi Kim ,  Joohyun Koh

IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

Abstract: A solar cell includes a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a silicon oxynitride layer on a light incident surface of the semiconductor substrate, wherein the silicon oxynitride layer comprises a first phase region having a first oxygen content and a first nitrogen content; a second phase region having a second oxygen content higher than the first oxygen content and a second nitrogen content lower than the first nitrogen content; and a third phase region having a third oxygen content lower than the second oxygen content and a third nitrogen content lower than the second nitrogen content.

公开(公告)号：US09935228B2

公开(公告)日：2018-04-03

申请号：US14830480

申请日：2015-08-19

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Chungyi Kim

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/065 ,  H01L31/18 ,  H01L31/0747

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

Abstract: A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer on the tunneling layer, wherein the buffer layer is a separate layer from the tunneling layer and includes an intrinsic buffer portion, and wherein at least one of a material, a composition and a crystalline structure of the buffer layer is different from those of the tunneling layer; a conductive type region on the tunneling layer, and including a first conductive type region having a first conductive type and a second conductive type region having a second conductive type; and an electrode connected to the conductive type region. The buffer layer is positioned adjacent to the tunneling layer and is apart from the electrode.

公开(公告)号：US11322631B2

公开(公告)日：2022-05-03

申请号：US16294605

申请日：2019-03-06

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi Kim ,  Minpyo Kim ,  Junghoon Choi

IPC: H01L31/044 ,  H01L31/048 ,  H02S20/22 ,  H01L31/05 ,  H02S40/20

Abstract: A solar cell panel can include a solar cell; a sealing member for sealing the solar cell; a first cover member disposed on the sealing member at one side of the solar cell; and a second cover member disposed on the sealing member at another side of the solar cell, in which the first cover member includes a base member and a colored portion having a light transmittance lower than a light transmittance of the base member, the first cover member constituting a colored area, and the colored portion includes at least two layers each formed of an oxide ceramic composition and having different colors or different light transmittances.

公开(公告)号：US11018274B2

公开(公告)日：2021-05-25

申请号：US16132672

申请日：2018-09-17

Applicant: LG Electronics Inc.

Inventor： Chungyi Kim ,  Junghoon Choi

IPC: H01L31/048 ,  H01L31/054 ,  H01L31/0468 ,  B32B17/10 ,  H02S20/26 ,  H02S40/22 ,  H02S20/22 ,  H01L31/05

Abstract: A solar cell panel includes a solar cell; a sealing member for sealing the solar cell; a first cover member positioned at a first surface of the solar cell on a first side of the sealing member; and a second cover member positioned at a second surface of the solar cell on a second side of the sealing member. The first cover member includes a base member and a colored portion having a lower light transmittance than the base member and partially formed on the base member to form a colored region. The second cover member includes a cover portion having a lower brightness than the colored portion and positioned at least an inactive region where the solar cell is not positioned.

公开(公告)号：US10483427B2

公开(公告)日：2019-11-19

申请号：US15831904

申请日：2017-12-05

Applicant: LG Electronics Inc.

Inventor： Jaewoo Choi ,  Chungyi Kim

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0745 ,  H01L31/0747

Abstract: A method of manufacturing a solar cell is disclosed. The method includes an overlap operation of overlapping front surfaces of two semiconductor substrates each other, a semiconductor layer depositing operation of simultaneously depositing a semiconductor layer on back surfaces of the two semiconductor substrates overlapping each other, a separating operation of separating the two semiconductor substrates overlapping each other, and a front surface texturing operation of texturing the front surfaces of the two semiconductor substrates after an etch stop layer forming operation.

公开(公告)号：US20200266756A1

公开(公告)日：2020-08-20

申请号：US16787940

申请日：2020-02-11

Applicant: LG Electronics Inc.

Inventor： Chungyi Kim ,  Junghoon Choi ,  Jeongkyu Kim

IPC: H02S20/26 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/048

Abstract: A solar cell panel according to an exemplary embodiment of the present disclosure comprises a first base member, an exterior forming portion formed on the first base member and made of an oxide ceramic composition, and a first cover member or glass substrate comprising a colored portion or cover portion.

公开(公告)号：US10686087B2

公开(公告)日：2020-06-16

申请号：US15600042

申请日：2017-05-19

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi Kim ,  Youngsung Yang ,  Jaewoo Choi ,  Mihee Heo

IPC: H01L31/0368 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/0216

Abstract: Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.

公开(公告)号：US10256364B2

公开(公告)日：2019-04-09

申请号：US15858016

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Hyungjin Kwon ,  Chungyi Kim ,  Junghoon Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L21/02

Abstract: A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.