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1.发明授权公开(公告)号：US08545629B2
公开(公告)日：2013-10-01
申请号：US11431090
申请日：2006-05-09
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
IPC分类号： H01L49/00
CPC分类号： C30B25/16 , C30B11/003 , C30B23/00 , C30B23/025 , C30B25/10 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02634 , H01L29/04 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/66462 , H01L29/7787 , H01L33/0075 , H01L33/025 , H01L33/12 , H01L33/325 , H01L2924/0002 , Y10T428/21 , H01L2924/00
摘要： Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
摘要翻译： 具有直径大于约25mm的AlN的大体积单晶和约10,000cm-2或更小的位错密度以及具有由这些本体晶体制造的任何所需晶体取向表面的高质量AlN衬底。
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2.发明授权公开(公告)号：US07776153B2
公开(公告)日：2010-08-17
申请号：US11265909
申请日：2005-11-03
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B21/02
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , H01L33/0075 , H01L33/025 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.
摘要翻译： 具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。 在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。 也可以使用该方法制造ZnO的块状晶体。
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3.发明授权公开(公告)号：US08123859B2
公开(公告)日：2012-02-28
申请号：US12841350
申请日：2010-07-22
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B29/04
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , H01L33/0075 , H01L33/025 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.
摘要翻译： 具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。 在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。 也可以使用该方法制造ZnO的块状晶体。
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4.发明申请公开(公告)号：US20110011332A1
公开(公告)日：2011-01-20
申请号：US12841350
申请日：2010-07-22
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B25/02
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , H01L33/0075 , H01L33/025 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.
摘要翻译： 具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。 在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。 也可以使用该方法制造ZnO的块状晶体。
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5.发明授权公开(公告)号：US06770135B2
公开(公告)日：2004-08-03
申请号：US10324998
申请日：2002-12-20
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B2502
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , Y10T117/10
摘要： A method and apparatus for producing bulk single crystals of AlN includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline AlN at the nucleation site.
摘要翻译： 用于制造AlN的单体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位点，并且提供用于相对于晶体生长封壳中的其它位置冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶AlN。
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公开(公告)号：US10697085B2
公开(公告)日：2020-06-30
申请号：US16160158
申请日：2018-10-15
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm=2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US10692980B2
公开(公告)日：2020-06-23
申请号：US16055228
申请日：2018-08-06
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： C30B29/38 , H01L29/207 , C30B23/00 , C30B29/40 , H01L29/20 , H01L21/02 , H01L21/225 , H01L33/32
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
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公开(公告)号：US20170191184A1
公开(公告)日：2017-07-06
申请号：US15463536
申请日：2017-03-20
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US09525032B2
公开(公告)日：2016-12-20
申请号：US14225999
申请日：2014-03-26
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
CPC分类号： H01L29/207 , C30B23/00 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/2258 , H01L29/2003 , H01L33/325
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
摘要翻译： 具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制备通过例如形成包括多个杂质物质的混合晶体并电激活至少一部分晶体来实现。
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公开(公告)号：US20100135349A1
公开(公告)日：2010-06-03
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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